Patents by Inventor Vincent Ah-Leung

Vincent Ah-Leung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for etching a three-dimensional dielectric layer
    Patent number: 11127835
    Abstract: There is provided a method for etching a dielectric layer covering at least partially a flank of a structure made of a semi-conductive material, the structure having at least one face, the method including a plurality of sequences, each including at least the following steps: a main oxidation so as to form an oxide film; a main anisotropic etching of the oxide film, carried out so as to etch a portion of the oxide film extending parallel to the flanks and at least some of the dielectric layer, be stopped before etching the structure and a whole thickness of another portion of the oxide film extending perpendicularly to the flanks, the steps being repeated until the complete removal of the dielectric layer located on the flanks of the structure.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: September 21, 2021
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Nicolas Posseme, Vincent Ah-Leung, Olivier Pollet
  • METHOD FOR ETCHING A THREE-DIMENSIONAL DIELECTRIC LAYER
    Publication number: 20200251570
    Abstract: There is provided a method for etching a dielectric layer covering at least partially a flank of a structure made of a semi-conductive material, the structure having at least one face, the method including a plurality of sequences, each including at least the following steps: a main oxidation so as to form an oxide film; a main anisotropic etching of the oxide film, carried out so as to etch a portion of the oxide film extending parallel to the flanks and at least some of the dielectric layer, be stopped before etching the structure and a whole thickness of another portion of the oxide film extending perpendicularly to the flanks, the steps being repeated until the complete removal of the dielectric layer located on the flanks of the structure.
    Type: Application
    Filed: December 20, 2019
    Publication date: August 6, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Nicolas POSSEME, Vincent Ah-Leung, Olivier Pollet