Abstract: Embodiments of the present technology provide a synchronous device. The synchronous device provides a first latch configured to store a data input signal during a first state of a first clock signal and a slack guard circuit. The slack guard circuit provides a delay element coupled to the first latch and configured to generate a delayed data signal, a gated-input cell coupled to the delay element and configured to propagate the delayed data signal during the first state of the first clock signal, and a comparator coupled to the first latch and the gated-input cell.

Abstract: The present disclosure relates to a synchronous device comprising: a first latch (206) having a data input receiving a data input signal (LD1) and configured to store the data input signal (LD1) during a first state of a first clock signal (CP?); and a slack guard circuit comprising: a delay element (214) having an input coupled to the data input of the first latch (206) and configured to generate, at its output, a delayed data signal (PG1); a gated-input cell (216) having an input coupled to an output of the delay element (214), the gated-input cell (216) being configured to propagate the delayed data signal (PG1) during the first state of the first clock signal (CP?); and a comparator (218) having a first input coupled to a data output of the first latch (206) and a second input coupled to an output of the gated-input cell (216).

Abstract: A method for determining a margin of use of an integrated circuit includes monitoring at least one sensor so as to determine at least one physical parameter representative of use of the integrated circuit, evaluating the at least one physical parameter to determine an instantaneous state of aging of the integrated circuit as a function of the at least one physical parameter, and calculating the margin of use for the integrated circuit from a comparison of the instantaneous state of aging with a presumed state of aging. If operation of the integrated circuit is outside the margin of use, at least one operating performance point of the integrated circuit is adjusted so as to bring operation of the integrated circuit back within the margin of use.

Abstract: A flip flop includes a data input, a clock input, a test chain input, a test chain output, a monitoring circuit, and an alert transmission circuit. The monitoring circuit is adapted to generate an alert if the time between arrival of a data bit and a clock edge is less than a threshold. The alert transmission circuit is adapted to apply during a monitoring phase an alert level to the test chain output in the event of an alert generated by the monitoring circuit, and to apply the alert level to the test chain output when an alert level is received at the test chain input.

Abstract: A system on a chip includes at least one integrated circuit that is configured to operate at least at one operating point. A monitoring circuit acquires at least the cumulative duration of activity of the at least one integrated circuit. An evaluation circuit establish at least one instantaneous state of aging of the at least one integrated circuit based on the at least one cumulative duration of activity. An adjustment circuit operates to change the at least one operating point on the basis of the at least one state of aging of the at least one integrated circuit.

Abstract: A method for determining a margin of use of an integrated circuit includes monitoring at least one sensor so as to determine at least one physical parameter representative of use of the integrated circuit, evaluating the at least one physical parameter to determine an instantaneous state of aging of the integrated circuit as a function of the at least one physical parameter, and calculating the margin of use for the integrated circuit from a comparison of the instantaneous state of aging with a presumed state of aging. If operation of the integrated circuit is outside the margin of use, at least one operating performance point of the integrated circuit is adjusted so as to bring operation of the integrated circuit back within the margin of use.

Abstract: A system-on-a-chip includes an integrated circuit and an estimation circuit. The estimation circuit operates to acquire at least one physical parameter representative of the use of the integrated circuit and determine an instantaneous state of aging of the integrated circuit as a function of the at least one physical parameter. A margin of use of the integrated circuit is then calculated by comparing the instantaneous state of aging with a presumed state of aging.

Abstract: A flip flop includes a data input, a clock input, a test chain input, a test chain output, a monitoring circuit, and an alert transmission circuit. The monitoring circuit is adapted to generate an alert if the time between arrival of a data bit and a clock edge is less than a threshold. The alert transmission circuit is adapted to apply during a monitoring phase an alert level to the test chain output in the event of an alert generated by the monitoring circuit, and to apply the alert level to the test chain output when an alert level is received at the test chain input.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: The disclosure concerns an integrated circuit comprising: a plurality of circuit domains, each circuit domain comprising: a plurality of transistor devices positioned over p-type and n-type wells, the transistor devices defining one or more data paths of the circuit domain; a monitoring circuit adapted to detect when the slack time of at least one of the data paths in the circuit domain falls below a threshold level and to generate an output signal on an output line based on said detection; and a biasing circuit adapted to modify a biasing voltage of the n-type and/or p-type well of the circuit domain.

Abstract: A system on a chip includes at least one integrated circuit that is configured to operate at least at one operating point. A monitoring circuit acquires at least the cumulative duration of activity of the at least one integrated circuit. An evaluation circuit establish at least one instantaneous state of aging of the at least one integrated circuit based on the at least one cumulative duration of activity. An adjustment circuit operates to change the at least one operating point on the basis of the at least one state of aging of the at least one integrated circuit.

Abstract: A system-on-a-chip includes an integrated circuit and an estimation circuit. The estimation circuit operates to acquire at least one physical parameter representative of the use of the integrated circuit and determine an instantaneous state of aging of the integrated circuit as a function of the at least one physical parameter. A margin of use of the integrated circuit is then calculated by comparing the instantaneous state of aging with a presumed state of aging.

Abstract: A method of circuit simulation includes: simulating, by a processing device, behavior of a heterojunction bipolar transistor device based on at least a first base-emitter voltage of the transistor to determine a first base or collector current density of the HBT device; and determining whether the application of the first base-emitter voltage to the HBT device will result in base current degradation by performing a first comparison of the first current density with a first current density limit.

Abstract: Electromigration may cause a fault to appear in an integrated circuit located on a semiconductor chip. To detect such a fault, at least one resistive test structure is provided separated from the integrated circuit and located on at least one metallization level of the integrated circuit. During operation of the integrated circuit, the resistive test structure is sensed. Detection of a voltage difference between two points of the resistive test structure is indicative of a fault.

Abstract: A digital electronic device is provided with a first and second sequential logic unit (SS1, SS2), each for receiving an input signal (D) and for outputting a first and second output signal (Q, QF), respectively. The electronic device furthermore comprises a comparator unit (C) for comparing the first and second output signals (Q, QF) and an adaptive clock generator unit (ACG) for generating a first and second internal clock (CK, CKF) for the first and second sequential logic unit (SS1, SS2), respectively. In a self-tuning mode, the adaptive clock generator unit (ACG) is adapted to delay the first and second internal clock signals (CK, CKF) with respect to the other internal clock signal (CKF). The delay induced by the adaptive control generator unit (ACG) is dependent on the result of the comparison unit (C). In a normal operation mode the adaptive control generator unit (ACG) is adapted to maintain the delay between the first and second internal clock signals constant.

Abstract: A digital electronic device is provided with a first and second sequential logic unit (SS1, SS2), each for receiving an input signal (D) and for outputting a first and second output signal (Q, QF), respectively. The electronic device furthermore comprises a comparator unit (C) for comparing the first and second output signals (Q, QF) and an adaptive clock generator unit (ACG) for generating a first and second internal clock (CK, CKF) for the first and second sequential logic unit (SS1, SS2), respectively. In a self-tuning mode, the adaptive clock generator unit (ACG) is adapted to delay the first and second internal clock signals (CK, CKF) with respect to the other internal clock signal (CKF). The delay induced by the adaptive control generator unit (ACG) is dependent on the result of the comparison unit (C). In a normal operation mode the adaptive control generator unit (ACG) is adapted to maintain the delay between the first and second internal clock signals constant.

Abstract: An integrated circuit comprising at least one MOS-type transistor, further comprising a system for detecting the variations of the electrical quantities of the at least one transistor, and a biasing device modifying the bias voltage of the bulk of the at least one transistor according to the variations measured by the detection system.

Abstract: An integrated circuit comprising at least one MOS-type transistor, further comprising a system for detecting the variations of the electrical quantities of the at least one transistor, and a biasing device modifying the bias voltage of the bulk of the at least one transistor according to the variations measured by the detection system.

Abstract: An integrated circuit comprising at least one MOS-type transistor, further comprising a system for detecting the variations of the electrical quantities of the at least one transistor, and a biasing device modifying the bias voltage of the bulk of the at least one transistor according to the variations measured by the detection system.