Patents by Inventor Virginia M. Robbins
Virginia M. Robbins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8039869Abstract: A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.Type: GrantFiled: August 14, 2007Date of Patent: October 18, 2011Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Steven D. Lester, Virginia M. Robbins, Scott W. Corzine
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Patent number: 7847297Abstract: An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.Type: GrantFiled: January 20, 2009Date of Patent: December 7, 2010Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Jeffrey N Miller, David P Bour, Virginia M Robbins, Steven D Lester
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Publication number: 20100032703Abstract: A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.Type: ApplicationFiled: October 15, 2009Publication date: February 11, 2010Applicant: Avago Technologies ECBU IP (Singapore) Pte. LtdInventors: Jeffrey N. Miller, Steven D. Lester, Virginia M. Robbins
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Patent number: 7635874Abstract: A light-emitting diode (LED) in accordance with the invention includes an edge-emitting LED stack having an external emitting surface from which light is emitted, and a reflective element that is located adjacent to at least one external surface of the LED stack other than the external emitting surface. The reflective element receives light that is generated inside the LED stack and reflects the received light back into the LED stack. At least a portion of the reflected light is then emitted from the external emitting surface.Type: GrantFiled: September 26, 2005Date of Patent: December 22, 2009Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Jeffrey N. Miller, Steven D. Lester, Virginia M. Robbins
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Publication number: 20090179229Abstract: An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.Type: ApplicationFiled: January 20, 2009Publication date: July 16, 2009Applicant: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Jeffrey N. Miller, David P. Bour, Virginia M. Robbins, Steven D. Lester
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Patent number: 7495314Abstract: An ohmic contact in accordance with the invention includes a layer of p-type GaN-based material. A first layer of a group II-VI compound semiconductor is located adjacent to the layer of p-type GaN-based material. The ohmic contact further includes a metal layer that provides metal contact. A second layer of a different II-VI compound semiconductor is located adjacent to the metal layer.Type: GrantFiled: September 26, 2005Date of Patent: February 24, 2009Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Jeffrey N. Miller, David P. Bour, Virginia M. Robbins, Steven D. Lester
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Patent number: 7473941Abstract: A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.Type: GrantFiled: August 15, 2005Date of Patent: January 6, 2009Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Virginia M. Robbins, Steven D. Lester, Jeffrey N. Miller, David P. Bour
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Patent number: 7273798Abstract: A gallium nitride device substrate comprises a layer of gallium nitride containing an additional lattice parameter altering element located over a substitute substrate.Type: GrantFiled: August 1, 2005Date of Patent: September 25, 2007Assignee: Avago Technologies ECBU IP (Singapore) Pte. Ltd.Inventors: Steven D. Lester, Virginia M. Robbins, Scott W. Corzine
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Patent number: 6953702Abstract: Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.Type: GrantFiled: May 16, 2002Date of Patent: October 11, 2005Assignee: Agilent Technologies, Inc.Inventors: Jeffrey N. Miller, Virginia M. Robbins, Steven D. Lester
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Patent number: 6806110Abstract: A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.Type: GrantFiled: May 16, 2002Date of Patent: October 19, 2004Assignee: Agilent Technologies, Inc.Inventors: Steven D. Lester, Virginia M. Robbins, Jeffrey N. Miller
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Publication number: 20030214992Abstract: A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.Type: ApplicationFiled: May 16, 2002Publication date: November 20, 2003Inventors: Steven D. Lester, Virginia M. Robbins, Jeffrey N. Miller
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Publication number: 20030215969Abstract: Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.Type: ApplicationFiled: May 16, 2002Publication date: November 20, 2003Inventors: Jeffrey N. Miller, Virginia M. Robbins, Steven D. Lester
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Patent number: 6586113Abstract: Systems and methods of manufacturing etchable heterojunction interfaces and etched heterojunction structures are described. A bottom layer is deposited on a substrate, a transition etch layer is deposited over the bottom layer, and a top layer is deposited over the transition etch layer. The transition etch layer substantially prevents the bottom layer and the top layer from forming a material characterized by a composition substantially different than the bottom layer and a substantially non-selective etchability with respect to the bottom layer. By tailoring the structure of the heterojunction interface to respond to heterojunction etching processes with greater predictability and control, the transition etch layer enhances the robustness of previously unreliable heterojunction device manufacturing processes. The transition etch layer enables one or more vias to be etched down to the top surface of the bottom layer in a reliable and repeatable manner.Type: GrantFiled: July 19, 2000Date of Patent: July 1, 2003Assignee: Agilent Technologies, Inc.Inventors: Sandeep R. Bahl, Yu-Min Houng, Virginia M. Robbins, Fred Sugihwo
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Patent number: 5502316Abstract: A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.Type: GrantFiled: October 12, 1995Date of Patent: March 26, 1996Assignee: Hewlett-Packard CompanyInventors: Fred A. Kish, Frank M. Steranka, Dennis C. DeFevere, Virginia M. Robbins, John Uebbing
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Patent number: 5376580Abstract: A method of forming a light emitting diode (LED) includes providing a temporary growth substrate that is selected for compatibility with fabricating LED layers having desired mechanical characteristics. For example, lattice matching is an important consideration. LED layers are then grown on the temporary growth substrate. High crystal quality is thereby achieved, whereafter the temporary growth substrate can be removed. A second substrate is bonded to the LED layers utilizing a wafer bonding technique. The second substrate is selected for optical properties, rather than mechanical properties. Preferably, the second substrate is optically transparent and electrically conductive and the wafer bonding technique is carried out to achieve a low resistance interface between the second substrate and the LED layers. Wafer bonding can also be carried out to provide passivation or light-reflection or to define current flow.Type: GrantFiled: March 19, 1993Date of Patent: December 27, 1994Assignee: Hewlett-Packard CompanyInventors: Fred A. Kish, Frank M. Steranka, Dennis C. DeFevere, Virginia M. Robbins, John Uebbing
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Patent number: 5115286Abstract: An electro-optical device with a transparent substrate is produced by epitaxially first growing the active device layers, followed by growth of the transparent substrate layer on an opaque wafer. The opaque wafer is subsequently removed. The active device layers have dopants with sufficiently low diffusivities that their electronic characteristics are not adversely affected by long exposure to elevated temperature during the growth of the transparent substrate layer. In a liquid phase epitaxy (LPE) method, a repeated temperature cycle technique is used where the temperature is repeatedly raised each time after cooling to provide a large cooling range for growing a sufficiently thick substrate layer or a series of device layers. In between growths and during the temperature heat-up periods, the device is stored within the LPE reactor. When a epitaxial layer is oxidizable, a non-oxidizable cap is temporarily grown on it in between growths and during the temperature heat up periods.Type: GrantFiled: February 27, 1991Date of Patent: May 19, 1992Assignee: Hewlett-Packard CompanyInventors: Michael D. Camras, Louis W. Cook, Virginia M. Robbins
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Patent number: 5008718Abstract: A light-emitting diode has a semiconductor substrate underlying active p-n junction layers of AlGaInP for emitting light. A transparent window layer of semiconductor different from AlGaInP overlies the active layers and has a lower electrical resistivity than the active layers and a bandgap greater than the bandgap of the active layers, for minimizing current crowding from a metal electrical contact over the transparent window layer. The active layers may be epitaxially grown on a temporary GaAs substrate. A layer of lattice mismatched GaP is then grown on the active layers with the GaP having a bandgap greater than the bandgap of the active layers so that it is transparent to light emitted by the LED. The GaAs temporary substrate is then selectively etched away so that the GaP acts as a transparent substrate. A transparent window layer may be epitaxially grown over the active layers on the face previously adjacent to the GaAs substrate.Type: GrantFiled: December 18, 1989Date of Patent: April 16, 1991Inventors: Robert M. Fletcher, Chihping Kuo, Timothy D. Osentowski, Virginia M. Robbins