Patents by Inventor Vladimir Ivantsov

Vladimir Ivantsov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11661673
    Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. An HVPE reactor includes generation, accumulation, and growth zones. A source material for growth of indium nitride is generated and collected inside the reactor. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is cooled and condenses into a liquid or solid condensate or source material having an indium-containing compound. The source material is collected in the accumulation zone. Vapor or gas resulting from evaporation of the condensate forms a second gas product, which reacts with a second reactive gas in the growth zone for growth of indium nitride.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: May 30, 2023
    Assignee: Ostendo Technologies, Inc.
    Inventors: Alexander L. Syrkin, Vladimir Ivantsov, Alexander Usikov, Vladimir A. Dmitriev
  • Patent number: 11322652
    Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: May 3, 2022
    Assignee: Ostendo Technologies, Inc.
    Inventors: Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury
  • Publication number: 20170170363
    Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.
    Type: Application
    Filed: December 13, 2016
    Publication date: June 15, 2017
    Inventors: Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury
  • Patent number: 9577143
    Abstract: A backflow liner in an epitaxial growth system is provided in order to control gas flow and protect the surface of substrates throughout an epitaxial growth cycle. The backflow liner provides critical protection during the warming time prior to substrate pre-treatment, while the growth environment reaches steady state condition between the pre-treatment and the growth process, during pauses between the layer depositions in case of multilayer structure growth, and during the cooling process. The direction of the gas flow through the backflow liner is counter to the deposition gas flows directed from the source end of the growth system. The backflow liner is therefore designed to shape the flow of gases to prevent formation of the vortex-type streams in the growth system that may negatively affect the growth process.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: February 21, 2017
    Assignee: Ostendo Technologies, Inc.
    Inventors: Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Alexander Syrkin
  • Patent number: 9443727
    Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: September 13, 2016
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
  • Patent number: 9416464
    Abstract: Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: August 16, 2016
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir A. Dmitriev, Oleg V. Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander L. Syrkin, Anna Volkova, Vladimir Sizov, Alexander Usikov, Vitali A. Soukhoveev
  • Patent number: 9023673
    Abstract: A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: May 5, 2015
    Assignee: Ostendo Technologies, Inc.
    Inventors: Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Vitali Soukhoveev, Alexander Syrkin, Alexander Usikov
  • Publication number: 20140353685
    Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.
    Type: Application
    Filed: August 13, 2014
    Publication date: December 4, 2014
    Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
  • Patent number: 8728938
    Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.
    Type: Grant
    Filed: June 26, 2012
    Date of Patent: May 20, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
  • Patent number: 8673074
    Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: March 18, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Alexander Usikov, Alexander Syrkin, Robert G. W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
  • Patent number: 8647435
    Abstract: HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.
    Type: Grant
    Filed: October 11, 2007
    Date of Patent: February 11, 2014
    Assignee: Ostendo Technologies, Inc.
    Inventors: Vladimir A. Dmitriev, Oleg V. Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander L. Syrkin, Anna Volkova, Vladimir Sizov, Alexander Usikov, Vitali A. Soukhoveev
  • Publication number: 20130337639
    Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.
    Type: Application
    Filed: June 26, 2012
    Publication date: December 19, 2013
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
  • Patent number: 8372199
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Grant
    Filed: June 19, 2008
    Date of Patent: February 12, 2013
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Patent number: 8092596
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Grant
    Filed: June 13, 2008
    Date of Patent: January 10, 2012
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A Dmitriev
  • Patent number: 7727333
    Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: June 1, 2010
    Assignee: Technologies and Devices International, Inc.
    Inventors: Alexander L. Syrkin, Vladimir Ivantsov, Alexander Usikov, Oleg Kovalenkov, Vladimir A. Dmitriev
  • Publication number: 20100012948
    Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.
    Type: Application
    Filed: July 15, 2009
    Publication date: January 21, 2010
    Applicant: OSTENDO TECHNOLOGIES, INC.
    Inventors: Alexander Usikov, Alexander Syrkin, Robert G.W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
  • Patent number: 7611586
    Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.
    Type: Grant
    Filed: October 8, 2007
    Date of Patent: November 3, 2009
    Assignee: Technologies and Devices International, Inc.
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Kaite Tsvetkov, Vladimir A. Dmitriev
  • Patent number: 7556688
    Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.
    Type: Grant
    Filed: May 20, 2005
    Date of Patent: July 7, 2009
    Assignee: Freiberger Compound Materials GmbH
    Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Publication number: 20090148984
    Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
    Type: Application
    Filed: June 13, 2008
    Publication date: June 11, 2009
    Inventors: Yuri V. MELNIK, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
  • Publication number: 20090050913
    Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.
    Type: Application
    Filed: May 20, 2005
    Publication date: February 26, 2009
    Applicant: Freiberger Compound Materials GmbH
    Inventors: Yuri MELNIK, Vitali SOUKHOVEEV, Vladimir IVANTSOV, Katie TSVETKOV, Vladimir DMITRIEV