Patents by Inventor Vladimir Ivantsov
Vladimir Ivantsov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11661673Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. An HVPE reactor includes generation, accumulation, and growth zones. A source material for growth of indium nitride is generated and collected inside the reactor. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is cooled and condenses into a liquid or solid condensate or source material having an indium-containing compound. The source material is collected in the accumulation zone. Vapor or gas resulting from evaporation of the condensate forms a second gas product, which reacts with a second reactive gas in the growth zone for growth of indium nitride.Type: GrantFiled: May 24, 2021Date of Patent: May 30, 2023Assignee: Ostendo Technologies, Inc.Inventors: Alexander L. Syrkin, Vladimir Ivantsov, Alexander Usikov, Vladimir A. Dmitriev
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Patent number: 11322652Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.Type: GrantFiled: December 13, 2016Date of Patent: May 3, 2022Assignee: Ostendo Technologies, Inc.Inventors: Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury
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Publication number: 20170170363Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.Type: ApplicationFiled: December 13, 2016Publication date: June 15, 2017Inventors: Anna Volkova, Vladimir Ivantsov, Alexander Syrkin, Benjamin A. Haskell, Hussein S. El-Ghoroury
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Patent number: 9577143Abstract: A backflow liner in an epitaxial growth system is provided in order to control gas flow and protect the surface of substrates throughout an epitaxial growth cycle. The backflow liner provides critical protection during the warming time prior to substrate pre-treatment, while the growth environment reaches steady state condition between the pre-treatment and the growth process, during pauses between the layer depositions in case of multilayer structure growth, and during the cooling process. The direction of the gas flow through the backflow liner is counter to the deposition gas flows directed from the source end of the growth system. The backflow liner is therefore designed to shape the flow of gases to prevent formation of the vortex-type streams in the growth system that may negatively affect the growth process.Type: GrantFiled: June 13, 2013Date of Patent: February 21, 2017Assignee: Ostendo Technologies, Inc.Inventors: Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Alexander Syrkin
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Patent number: 9443727Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.Type: GrantFiled: August 13, 2014Date of Patent: September 13, 2016Assignee: Ostendo Technologies, Inc.Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
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Patent number: 9416464Abstract: Apparatus and methods for controlling gas flows in a HVPE reactor. Gas flows may be controlled by a gas focusing element. Gas injection and gas collection tubes are positioned within an outer tube and are separated from each other to define a space there between. A gas, such as HCl gas, flows over the outer surfaces of the injection and collection tubes to contain gases within the space as they flow from the injection tube to the collection tube and over a seed upon which group III nitride materials are grown. Gas flows may also be controlled by a multi-tube structure that separates gases until they reach a grown zone. A multi-tube structure may include four tubes, which separate flows of a halide reactive gas, a reaction product that flows with a carrier gas, and ammonia.Type: GrantFiled: October 11, 2007Date of Patent: August 16, 2016Assignee: Ostendo Technologies, Inc.Inventors: Vladimir A. Dmitriev, Oleg V. Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander L. Syrkin, Anna Volkova, Vladimir Sizov, Alexander Usikov, Vitali A. Soukhoveev
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Patent number: 9023673Abstract: A method to grow single phase group III-nitride articles including films, templates, free-standing substrates, and bulk crystals grown in semi-polar and non-polar orientations is disclosed. One or more steps in the growth process includes the use of additional free hydrogen chloride to eliminate undesirable phases, reduce surface roughness, and increase crystalline quality. The invention is particularly well-suited to the production of single crystal (11.2) GaN articles that have particular use in visible light emitting devices.Type: GrantFiled: June 13, 2013Date of Patent: May 5, 2015Assignee: Ostendo Technologies, Inc.Inventors: Lisa Shapovalov, Oleg Kovalenkov, Vladimir Ivantsov, Vitali Soukhoveev, Alexander Syrkin, Alexander Usikov
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Publication number: 20140353685Abstract: A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes.Type: ApplicationFiled: August 13, 2014Publication date: December 4, 2014Inventors: Vitali Soukhoveev, Vladimir Ivantsov, Benjamin A. Haskell, Hussein S. El-Ghoroury, Alexander Syrkin
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Patent number: 8728938Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.Type: GrantFiled: June 26, 2012Date of Patent: May 20, 2014Assignee: Ostendo Technologies, Inc.Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
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Patent number: 8673074Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in an atmosphere of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.Type: GrantFiled: July 15, 2009Date of Patent: March 18, 2014Assignee: Ostendo Technologies, Inc.Inventors: Alexander Usikov, Alexander Syrkin, Robert G. W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
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Patent number: 8647435Abstract: HVPE reactors and methods for growth of p-type group III nitride materials including p-GaN. A reaction product such as gallium chloride is delivered to a growth zone inside of a HVPE reactor by a carrier gas such as Argon. The gallium chloride reacts with a reactive gas such as ammonia in the growth zone in the presence of a magnesium-containing gas to grow p-type group III nitride materials. The source of magnesium is an external, non-metallic compound source such as Cp2Mg.Type: GrantFiled: October 11, 2007Date of Patent: February 11, 2014Assignee: Ostendo Technologies, Inc.Inventors: Vladimir A. Dmitriev, Oleg V. Kovalenkov, Vladimir Ivantsov, Lisa Shapovalov, Alexander L. Syrkin, Anna Volkova, Vladimir Sizov, Alexander Usikov, Vitali A. Soukhoveev
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Publication number: 20130337639Abstract: The present invention relates to a method for producing a modified surface of a substrate that stimulates the growth of epitaxial layers of group-III nitride semiconductors with substantially improved structural perfection and surface flatness. The modification is conducted outside or inside a growth reactor by exposing the substrate to a gas-product of the reaction between hydrogen chloride (HCl) and aluminum metal (Al). As a single-step or an essential part of the multi-step pretreatment procedure, the modification gains in coherent coordination between the substrate and group-III nitride epitaxial structure to be deposited. Along with epilayer, total epitaxial structure may include buffer inter-layer to accomplish precise substrate-epilayer coordination.Type: ApplicationFiled: June 26, 2012Publication date: December 19, 2013Applicant: OSTENDO TECHNOLOGIES, INC.Inventors: Vladimir Ivantsov, Anna Volkova, Lisa Shapovalov, Alexander Syrkin, Philippe Spiberg, Hussein S. El-Ghoroury
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Patent number: 8372199Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: GrantFiled: June 19, 2008Date of Patent: February 12, 2013Assignee: Freiberger Compound Materials GmbHInventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 8092596Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: GrantFiled: June 13, 2008Date of Patent: January 10, 2012Assignee: Freiberger Compound Materials GmbHInventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A Dmitriev
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Patent number: 7727333Abstract: Hydride phase vapor epitaxy (HVPE) growth apparatus, methods and materials and structures grown thereby. A HVPE growth apparatus includes generation, accumulation and growth zones. A first reactive gas reacts with an indium source inside the generation zone to produce a first gas product having an indium-containing compound. The first gas product is transported to the accumulation zone where it cools and condenses into a source material having an indium-containing compound. The source material is collected in the accumulation zone and evaporated. Vapor or gas resulting from evaporation of the source material forms reacts with a second reactive gas in the growth zone for growth of ternary and quaternary materials including indium gallium nitride, indium aluminum nitride, and indium gallium aluminum nitride.Type: GrantFiled: March 27, 2007Date of Patent: June 1, 2010Assignee: Technologies and Devices International, Inc.Inventors: Alexander L. Syrkin, Vladimir Ivantsov, Alexander Usikov, Oleg Kovalenkov, Vladimir A. Dmitriev
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Publication number: 20100012948Abstract: A method of growing planar non-polar m-plane or semi-polar III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane Sapphire substrate, using hydride vapor phase epitaxy (HVPE). The method includes in-situ pretreatment of the substrate at elevated temperatures in the ambient of ammonia and argon, growing an intermediate layer such as an aluminum nitride (AlN) or aluminum-gallium nitride (AlGaN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the intermediate layer using HVPE.Type: ApplicationFiled: July 15, 2009Publication date: January 21, 2010Applicant: OSTENDO TECHNOLOGIES, INC.Inventors: Alexander Usikov, Alexander Syrkin, Robert G.W. Brown, Hussein S. El-Ghoroury, Philippe Spiberg, Vladimir Ivantsov, Oleg Kovalenkov, Lisa Shapovalova
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Patent number: 7611586Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: October 8, 2007Date of Patent: November 3, 2009Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Kaite Tsvetkov, Vladimir A. Dmitriev
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Patent number: 7556688Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: May 20, 2005Date of Patent: July 7, 2009Assignee: Freiberger Compound Materials GmbHInventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Publication number: 20090148984Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: ApplicationFiled: June 13, 2008Publication date: June 11, 2009Inventors: Yuri V. MELNIK, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Publication number: 20090050913Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: ApplicationFiled: May 20, 2005Publication date: February 26, 2009Applicant: Freiberger Compound Materials GmbHInventors: Yuri MELNIK, Vitali SOUKHOVEEV, Vladimir IVANTSOV, Katie TSVETKOV, Vladimir DMITRIEV