Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial III-V layers by epitaxial growth on the epitaxial silicon layer.

Abstract: A light-emitting device may include a ceramic substrate having a reflective component, a light-emitting diode on the ceramic substrate, and a light-converting material over the light-emitting diode. A lighting system may include a ceramic substrate having a reflective component, a plurality of light-emitting diodes connected together in series, wherein the plurality of light-emitting diodes are on the ceramic substrate, and a light-converting material over the plurality of light-emitting diodes. The ceramic substrate may provide electrical insulation between the light-emitting diode and the aluminum carrier. The ceramic substrate may provide thermal conductivity between the light-emitting diode and the aluminum carrier. The reflective component may include zirconium oxide. The ceramic substrate may include aluminum oxide and/or aluminum nitride. The light-converting material may include phosphor. The light-emitting diode may have an epitaxial diode structure.

Abstract: Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.

Abstract: Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers a portion of the LED bottom surface. A pair of electrical terminals is connected with respective LED contacts, are sized larger than the contacts, and connect with the lens material along the LED bottom surface. A wavelength converting material may be interposed between the LED and the lens. LED constructions may comprise a number of LEDs, where the light emitted by each LED differs from one another by about 2.5 nm or less. LED constructions are made by attaching 2 or more LEDs to a common wafer by adhesive layer, forming a lens on a wafer level over each LED to provide a rigid structure, removing the common wafer, forming the electrical contacts on a wafer level, and then separating the LEDs.

Abstract: In various embodiments, lighting systems include a carrier having a plurality of conductive elements disposed thereon and a light-emitting array. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting diodes (LEDs), each of which has at least two electrical contacts electrically connected to conductive elements.

Abstract: A method of manufacturing a substrate includes forming a support structure by providing a polycrystalline ceramic core, encapsulating the polycrystalline ceramic core in a first adhesion shell, encapsulating the first adhesion shell in a conductive shell, encapsulating the conductive shell in a second adhesion shell, and encapsulating the second adhesion shell in a barrier shell. The method also includes joining a bonding layer to the support structure, joining a substantially single crystalline silicon layer to the bonding layer, forming an epitaxial silicon layer by epitaxial growth on the substantially single crystalline silicon layer, and forming one or more epitaxial layers by epitaxial growth on the epitaxial silicon layer.

Abstract: Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.

Abstract: Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

Abstract: A group III-nitride (III-N)-based electronic device includes an engineered substrate, a metalorganic chemical vapor deposition (MOCVD) III-N-based epitaxial layer coupled to the engineered substrate, and a hybrid vapor phase epitaxy (HVPE) III-N-based epitaxial layer coupled to the MOCVD epitaxial layer.

Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

Abstract: A method of fabricating a semiconductor structure includes providing an engineered substrate including a polycrystalline substrate, a barrier layer encapsulating the polycrystalline substrate, and a bonding layer coupled to the barrier layer. The method further includes forming a first silicon layer coupled to the bonding layer, forming a dielectric layer coupled to the first silicon layer, forming a second silicon layer coupled to the dielectric layer, removing a portion of the second silicon layer and a corresponding portion of the dielectric layer to expose a portion of the first silicon layer, forming a gallium nitride (GaN) layer coupled to the exposed portion of the first silicon layer, forming a gallium nitride (GaN) based device coupled to the GaN layer, and forming a silicon-based device coupled to a remaining portion of the second silicon layer.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: A monolithic microwave integrated circuit (MMIC) system includes a growth substrate, a device layer coupled to the growth substrate, a plurality of MMIC device elements coupled to the device layer, and a plurality of metallization structures coupled to the plurality of MMIC device elements. The MMIC system also includes a carrier substrate coupled to the plurality of metallization structures and a cooling structure coupled to the carrier substrate.

Abstract: A substrate for RF devices includes a polycrystalline ceramic core and an interlayer structure. The interlayer structure includes a first silicon oxide layer coupled to the polycrystalline ceramic core, a polysilicon layer coupled to the first silicon oxide layer, a second silicon oxide layer coupled to the polysilicon layer, a barrier layer coupled to the second silicon oxide layer, a third silicon oxide layer coupled to the barrier layer, and a substantially single crystalline silicon layer coupled to the third silicon oxide layer.

Abstract: An engineered substrate structure includes a ceramic substrate having a front surface characterized by a plurality of peaks. The ceramic substrate includes a polycrystalline material. The engineered substrate structure also includes a planarization layer comprising a planarization layer material and coupled to the front surface of the ceramic substrate. The planarization layer defines fill regions filled with the planarization layer material between adjacent peaks of the plurality of peaks on the front surface of the ceramic substrate. The engineered substrate structure further includes a barrier shell encapsulating the ceramic substrate and the planarization layer, wherein the barrier shell has a front side and a back side, a bonding layer coupled to the front side of the barrier shell, a single crystal layer coupled to the bonding layer, and a conductive layer coupled to the back side of the barrier shell.

Abstract: Light emitting diode (LED) constructions comprise an LED having a pair of electrical contacts along a bottom surface. A lens is disposed over the LED and covers a portion of the LED bottom surface. A pair of electrical terminals is connected with respective LED contacts, are sized larger than the contacts, and connect with the lens material along the LED bottom surface. A wavelength converting material may be interposed between the LED and the lens. LED constructions may comprise a number of LEDs, where the light emitted by each LED differs from one another by about 2.5 nm or less. LED constructions are made by attaching 2 or more LEDs to a common wafer by adhesive layer, forming a lens on a wafer level over each LED to provide a rigid structure, removing the common wafer, forming the electrical contacts on a wafer level, and then separating the LEDs.

Abstract: Various aspects of a light emitting apparatus include a substrate having at least one angled portion. Some aspects of the light emitting apparatus include at least one light emitting device arranged on the substrate. Some aspects of the light emitting apparatus include a plurality of conductors arranged on the substrate. In some aspects of the light emitting apparatus, the conductors are electrically coupled to the at least one light emitting device.

Abstract: Wavelength converters, including polarization-enhanced carrier capture converters, for solid state lighting devices, and associated systems and methods are disclosed. A solid state radiative semiconductor structure in accordance with a particular embodiment includes a first region having a first value of a material characteristic and being positioned to receive radiation at a first wavelength. The structure can further include a second region positioned adjacent to the first region to emit radiation at a second wavelength different than the first wavelength. The second region has a second value of the material characteristic that is different than the first value, with the first and second values of the characteristic forming a potential gradient to drive electrons, holes, or both electrons and holes in the radiative structure from the first region to the second region. In a further particular embodiment, the material characteristic includes material polarization.

Abstract: An LED CoB structure with the combination use of blue and red LED dies is used to achieve warm white light, with good quantum conversion efficiency at a reasonably low cost. Both the red and blue LED dies are fabricated on transparent substrates. The current density of the LED dies is designed to match the different degradation rate of each type of LED die. The methods used to achieve high efficiency include adjusting the power, wavelength, and/or position of the dies.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.