Patents by Inventor Volker Harle

Volker Harle has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9431580
    Abstract: A method for producing an optoelectronic component comprising the steps of providing a semiconductor layer sequence having at least one active region, wherein the active region is suitable for emitting electromagnetic radiation during operation, and applying at least one layer on a first surface of the semiconductor layer sequence by means of an ion assisted application method.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: August 30, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Volker Härle, Christine Höss, Alfred Lell, Uwe Strauss
  • Patent number: 9174400
    Abstract: A method for producing structures (5) on a multiplicity of optoelectronic components (1), wherein the multiplicity of optoelectronic components (1) are arranged on an auxiliary carrier (10) and the structures (5) are produced by carrying out a movement of a first roller (15) relative to the auxiliary carrier (10) and producing the structures (5) in the process by means of exerting a pressure between the first roller (15) and the auxiliary carrier (10).
    Type: Grant
    Filed: February 15, 2007
    Date of Patent: November 3, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Karl Engl, Berthold Hahn, Volker Härle
  • Patent number: 8994000
    Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
    Type: Grant
    Filed: July 11, 2012
    Date of Patent: March 31, 2015
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Adrian Avramescu, Volker Härle, Lutz Höppel, Matthias Peter, Matthias Sabathil, Uwe Strauss
  • Patent number: 8877529
    Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: November 4, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Berthold Hahn, Volker Härle, Reiner Windisch
  • Patent number: 8809086
    Abstract: A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.
    Type: Grant
    Filed: February 16, 2012
    Date of Patent: August 19, 2014
    Assignee: OSRAM GmbH
    Inventors: Stefan Bader, Dominik Eisert, Berthold Hahn, Volker Härle
  • Publication number: 20140203413
    Abstract: A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.
    Type: Application
    Filed: December 16, 2011
    Publication date: July 24, 2014
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Johannes Baur, Berthold Hahn, Volker Härle, Karl Engl, Joachim Hertkorn, Tetsuya Taki
  • Patent number: 8728937
    Abstract: For semiconductor chips using thin film technology, an active layer sequence is applied to a growth substrate, on which a reflective electrically conductive contact material layer is then formed. The active layer sequence is patterned to form active layer stacks, and reflective electrically conductive contact material layer is patterned to be located on each active layer stack. Then, a flexible, electrically conductive foil is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.
    Type: Grant
    Filed: January 8, 2010
    Date of Patent: May 20, 2014
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Andreas Ploessl, Stephan Kaiser, Volker Härle, Berthold Hahn
  • Patent number: 8658446
    Abstract: Presented is a method for fabricating a semiconductor substrate. The method includes implanting impurity material into the semiconductor substrate, and forming a reflective layer-like zone in the semiconductor substrate that includes the impurity material.
    Type: Grant
    Filed: November 3, 2008
    Date of Patent: February 25, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Volker Härle
  • Patent number: 8658447
    Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: February 25, 2014
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Berthold Hahn, Volker Härle, Reiner Windisch
  • Patent number: 8604497
    Abstract: A radiation-emitting thin-film semiconductor chip with an epitaxial multilayer structure (12), which contains an active, radiation-generating layer (14) and has a first main face (16) and a second main face (18)—remote from the first main face—for coupling out the radiation generated in the active, radiation-generating layer. Furthermore, the first main face (16) of the multilayer structure (12) is coupled to a reflective layer or interface, and the region (22) of the multilayer structure that adjoins the second main face (18) of the multilayer structure is patterned one- or two-dimensionally with convex elevations (26).
    Type: Grant
    Filed: September 26, 2003
    Date of Patent: December 10, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Dominik Eisert, Berthold Hahn, Volker Härle
  • Patent number: 8598014
    Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: December 3, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Michael Fehrer, Berthold Hahn, Volker Härle, Stephan Kaiser, Frank Otte, Andreas Plössl
  • Patent number: 8581279
    Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).
    Type: Grant
    Filed: June 2, 2006
    Date of Patent: November 12, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Johannes Baur, Volker Härle, Berthold Hahn, Andreas Weimar, Raimund Oberschmid, Ewald Karl Michael Guenther, Franz Eberhard, Markus Richter, Jörg Strauss
  • Patent number: 8575003
    Abstract: Presented is a method for producing an optoelectronic component. The method includes separating a semiconductor layer based on a III-V-compound semiconductor material from a substrate by irradiation with a laser beam having a plateau-like spatial beam profile, where individual regions of the semiconductor layer are irradiated successively.
    Type: Grant
    Filed: August 21, 2009
    Date of Patent: November 5, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Michael Fehrer, Berthold Hahn, Volker Härle, Stephan Kaiser, Frank Otte, Andreas Plössl
  • Patent number: 8524573
    Abstract: A method for producing a semiconductor component, in which a semiconductor layer is separated from a substrate by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile with a flank slope is chosen to be gentle enough to prevent cracks in the semiconductor layer that arise as a result of thermally induced lateral stresses during the separation of semiconductor layer and substrate.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: September 3, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Stephan Kaiser, Volker Härle, Berthold Hahn
  • Patent number: 8502264
    Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).
    Type: Grant
    Filed: April 20, 2007
    Date of Patent: August 6, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Volker Hârle, Uwe Strauss, Georg Brüderl, Christoph Eichler, Adrian Avramescu
  • Patent number: 8476643
    Abstract: A radiation-emitting body comprising a layer sequence having an active region for generating electromagnetic radiation, a coupling-out layer for coupling out the generated radiation, said coupling-out layer being arranged on a first side of the layer sequence, a reflection layer for reflecting the generated radiation, said reflection layer being arranged on a second side opposite the first side, and an interface of the layer sequence which faces the reflection layer and which has a lateral patterning having projecting structure elements, wherein the reflection layer is connected to the layer sequence in such a way that the reflection layer has a patterning corresponding to the patterning of the interface. A method for producing a radiation-emitting body is furthermore specified.
    Type: Grant
    Filed: April 13, 2007
    Date of Patent: July 2, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Berthold Hahn, Volker Härle, Reiner Windisch
  • Patent number: 8368092
    Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).
    Type: Grant
    Filed: January 25, 2005
    Date of Patent: February 5, 2013
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Johannes Baur, Berthold Hahn, Volker Härle, Raimund Oberschmid, Andreas Weimar
  • Publication number: 20120280207
    Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
    Type: Application
    Filed: July 11, 2012
    Publication date: November 8, 2012
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Adrian AVRAMESCU, Volker Härle, Lutz Höppel, Matthias Peter, Matthias Sabathil, Uwe Strauss
  • Patent number: 8304799
    Abstract: Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.
    Type: Grant
    Filed: February 18, 2011
    Date of Patent: November 6, 2012
    Assignee: Osram Opto Semiconductors GmbH
    Inventor: Volker Härle
  • Patent number: 8273593
    Abstract: A method for micropatterning a radiation-emitting surface of a semiconductor layer sequence for a thin-film light-emitting diode chip, wherein the semiconductor layer sequence is grown on a substrate, a mirror layer is formed or applied on the semiconductor layer sequence, which reflects back into the semiconductor layer sequence at least part of a radiation that is generated in the semiconductor layer sequence during the operation thereof and is directed toward the mirror layer, the semiconductor layer sequence is separated from the substrate, and a separation surface of the semiconductor layer sequence, from which the substrate is separated, is etched by an etchant which predominantly etches at crystal defects and selectively etches different crystal facets at the separation surface.
    Type: Grant
    Filed: February 15, 2011
    Date of Patent: September 25, 2012
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Berthold Hahn, Stephan Kaiser, Volker Härle