Abstract: A carbide-coated carbon material including a base material containing carbon as a main component and chlorine, and a carbide layer containing a carbide as a main component and chlorine, the carbide layer being disposed on the base material. The base material has, near an interface between the base material and the carbide layer, a base material buffer region where a chlorine concentration continuously changes in a direction toward the carbide layer. The carbide layer has, near the interface between the base material and the carbide layer, a carbide layer buffer region where the chlorine concentration continuously changes in a direction toward the base material. The carbide-coated carbon material has sufficient adhesion strength in the interface between the carbide layer and the base material containing carbon as a main component.

Abstract: A film may be formed on a surface of a substrate by chemical vapor deposition in a reaction container provided with at least a first holding member that is capable of holding the substrate and a second holding member that is capable of holding the substrate independently from the first holding member, by: (a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member; (b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and (c) forming a film on the surface of the substrate held by the second holding member by chemical vapor deposition.

Abstract: A carbide-coated carbon material including a base material containing carbon as a main component and chlorine, and a carbide layer containing a carbide as a main component and chlorine, the carbide layer being disposed on the base material. The base material has, near an interface between the base material and the carbide layer, a base material buffer region where a chlorine concentration continuously changes in a direction toward the carbide layer. The carbide layer has, near the interface between the base material and the carbide layer, a carbide layer buffer region where the chlorine concentration continuously changes in a direction toward the base material. The carbide-coated carbon material has sufficient adhesion strength in the interface between the carbide layer and the base material containing carbon as a main component.

Abstract: The present invention relates to a heat-resistant coat member packaged body including: a heat-resistant coat member formed by coating a substrate with a heat-resistant material; and a bag member that accommodates the heat-resistant coat member wherein the bag member has a water vapor permeability of 0.3 g/m2·day or less. The present invention also relates to a method for packaging a heat-resistant coat member, including packaging a heat-resistant coat member obtained by coating a substrate with a heat-resistant material with a bag member having a water vapor permeability of 0.3 g/m2·day or less. According to the present invention, it is possible to provide a heat-resistant coat member packaged body capable of obtaining a heat-resistant coat member in which peeling of a heat-resistant material coating a substrate can be suppressed even when heated after being stored for a long period of time, and a method for packaging the heat-resistant coat member.

Abstract: A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Abstract: The present invention relates to a chemical vapor deposition apparatus for forming a film on a surface of a substrate(6) held in a reaction container, wherein the reaction container includes a first holding member(4) that is capable of holding the substrate(6) and a second holding member(5) that is capable of holding the substrate(6) independently from the first holding member(4), and at least one holding member among the first holding member(4) and the second holding member(5) is movable in a vertical direction.

Abstract: A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Abstract: The present invention relates to a chemical vapor deposition apparatus for forming a film on a surface of a substrate(6) held in a reaction container, wherein the reaction container includes a first holding member(4) that is capable of holding the substrate(6) and a second holding member(5) that is capable of holding the substrate(6) independently from the first holding member(4), and at least one holding member among the first holding member(4) and the second holding member(5) is movable in a vertical direction.

Abstract: A member for an apparatus for manufacturing a semiconductor single crystal having long product life and a tantalum carbide coated carbon material are provided. The tantalum carbide coated carbon material according to the present invention is a tantalum carbide coated carbon material in which at least a part of a surface of a carbon base material is coated with a tantalum carbide coated film containing tantalum carbide as a main component, in which in the tantalum carbide coated film, an intensity of an X-ray diffraction line corresponding to a plane with respect to an out-of-plane direction is larger than intensities of X-ray diffraction lines corresponding to other crystal planes, and the intensity ratio is 60% or more with respect to a sum of intensities of X-ray diffraction lines corresponding to all crystal planes.

Abstract: A PBN-coated carbon heater is disclosed in which the carbon base body is anisotropic with respect to thermal expansion coefficient such that the maximum-to-minimum coefficient ratio is 1.02 through 1.50 for temperatures between 50 and 800 degree C.; preferably the carbon base body is also anisotropic with respect to electric resistivity such that the maximum-to-minimum resistivity ratio is greater than 1.04 but not greater than 1.51, and the direction in which the resistivity is maximum coincides the direction of the heater pattern in which the electricity runs the longest distance.

Abstract: A PBN-coated carbon heater is disclosed in which the carbon base body is anisotropic with respect to thermal expansion coefficient such that the maximum-to-minimum coefficient ratio is 1.02 through 1.50 for temperatures between 50 and 800 degree C.; preferably the carbon base body is also anisotropic with respect to electric resistivity such that the maximum-to-minimum resistivity ratio is greater than 1.04 but not greater than 1.51, and the direction in which the resistivity is maximum coincides the direction of the heater pattern in which the electricity runs the longest distance.

Abstract: The present invention relates to a corrosion-resistant multilayer ceramic member consisting at least of: a ceramic support substrate; an electrode layer formed on the ceramic support substrate; a power-supply member connected to the electrode layer; an insulating protection layer formed on the ceramic support substrate to cover the electrode layer; and a ceramic protection substrate of which at least a part is provided on the insulating protection layer. Thereby, there is provided a long-life corrosion-resistant multilayer ceramic member excellent in corrosion resistance even when exposed to a corrosive gas.

Abstract: The method is adapted for forming an aluminum nitride thin film having a high density and a high resistance to thermal shock by a chemical vapor deposition process and includes steps of mixing a gas containing aluminum atoms (Al) and a gas containing nitrogen atoms (N) with a gas containing oxygen atoms (O) and feeding the mixture to a member to be covered by an aluminum nitride thin film.

Abstract: A corrosion-resistant article is proposed which is coated with an aluminum nitride wherein the aluminum nitride grains contain oxygen by 0.1 mass % or greater but not greater than 20 mass % so that the thermal expansion coefficient of the coating layer is made even with that of the base body; the relative density of the coating layer is preferably 50% or higher but lower than 98%. It is preferred that the coating layer is first made by chemical vapor deposition and then subjected to an oxidizing atmosphere of a temperature of 700 degrees centigrade or higher but 1150 degrees centigrade or lower; or it is preferable that after the chemical vapor deposition step the coating layer is exposed to the natural atmosphere to adsorb hydrate and then subjected to a heat treatment in an inert atmosphere of a temperature of 900 degrees centigrade but 1300 degrees centigrade or lower.

Abstract: The method is adapted for forming an aluminum nitride thin film having a high density and a high resistance to thermal shock by a chemical vapor deposition process and includes steps of mixing a gas containing aluminum atoms (Al) and a gas containing nitrogen atoms (N) with a gas containing oxygen atoms (O) and feeding the mixture to a member to be covered by an aluminum nitride thin film.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p having a nitrogen gas permeability of 1×10?2 cm2/sec or less or being made of a compound containing a dopant formed on the protection layer 4.

Abstract: There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p that is an oxide having an oxygen amount of stoichiometric ratio or less formed on the protection layer. There can be provided a heating element in which a corrosion-resistant layer whose resistivity or hardness is controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.

Abstract: The method, in which base material ingot 1 is heated and softened in an electric furnace 3, drawn with a pair of pinch roller 6 and 6, and elongated to make base material rod 7 having a smaller diameter than the ingot, features: forming either a roller groove 11 having a curvature radius which is larger than the outer diameter of the base material rod 7 or a V-shaped roller groove 11 having the cross section consisting of straight lines on the surface of the pinch roller 6 made of metal; nipping with the facing roller grooves 11 and 11 respectively formed on the surfaces of a pair of said pinch rollers 6 and 6; and drawing said base material rod.

Abstract: The invention provides an electrostatic chuck in which a workpiece-chucking surface is made flat.

Abstract: The present invention is a corrosion-resistant multilayer ceramic member including at least: a ceramic substrate, an electrode layer formed on the ceramic substrate, a feeding member that supplies electricity to the electrode layer, and a protection layer that prevents corrosion; wherein the electrode layer is formed on one surface or both surfaces of the ceramic substrate, the feeding member is connected with the electrode layer, the protection layer is formed with a thickness of 0.02 mm or above and 10 mm or less on that surface of the ceramic substrate where the electrode layer is formed so as to cover the electrode layer, and the protection layer contains any one of silicon oxide, rare-earth oxide, aluminum nitride, and aluminum oxide as a main component. Hereby, there is provided a corrosion-resistant multilayer ceramic member that has excellent corrosion resistance and a long life duration even when exposed to a corrosive gas.