Abstract: An optoelectronic device including first, second, and third three-dimensional light-emitting diodes having an axial configuration. Each light-emitting diode includes a semiconductor element and an active region resting on the semiconductor element. Each semiconductor element corresponds to a microwire, a nanowire, a nanometer- or micrometer-range conical or frustoconical element. The first, second, and third light-emitting diodes are configured to respectively emit first, second, and third radiations at first, second, and third wavelengths. The semiconductor elements of the first, second, and third light-emitting diodes respectively have first, second, and third diameters. The first diameter is smaller than the second diameter and the second diameter is smaller than the third diameter, the first wavelength being greater than the third wavelength and the second wavelength being greater than the first wavelength.

Abstract: A light-emitting diode manufacturing method including the forming of three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, each having a lower portion and a flared upper portion inscribed within a frustum of half apical angle ?. The method further comprises, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor layer of the III-V compound covering the active area by vapor deposition at a pressure lower than 10 mPa, by using a flux of the group-III element along a direction inclined by an angle ?III and a flux of the group-V element along a direction inclined by an angle ?V with respect to the vertical axis, angles ?III and ?V being smaller than angle ?.

Abstract: A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa.

Abstract: An optoelectronic device includes pixels that each have at least one primary sub-pixel having a primary light-emitting diode formed on a support face a substrate provided with a first primary semiconductive portion that has an overall elongated wire-like shape having a top end, a primary lattice parameter accommodation layer arranged on the top end of the first primary semiconductive portion, a second primary active semiconductive portion arranged at least on the primary lattice parameter accommodation layer, and a third primary semiconductive portion arranged on the second primary active semiconductive portion. The primary lattice parameter accommodation layer has, with the second primary active semiconductive portion, a first difference in primary lattice parameters between 2.12% and 0.93% relative to the second primary active semiconductive portion.

Abstract: An optoelectronic device including one or a plurality of light-emitting diodes, each light-emitting diode including a three-dimensional semiconductor element, an active area resting on the three-dimensional semiconductor element and a stack of semiconductor layers covering the active area, the active area including a plurality of quantum wells, said stack being in mechanical contact with a plurality of quantum wells.

Abstract: A method of manufacturing an optoelectronic device including light-emitting diodes comprising forming three-dimensional semiconductor elements, extending along parallel axes, made of a III-V compound, with a polarity of the group-III element, the method further including, for each semiconductor element, forming an active area covering the semiconductor element and a stack of semiconductor layers covering the active area, the active area being formed by vapor deposition at low pressure and comprising quantum wells separated by barrier layers, each quantum well including a ternary alloy having at least one first group-III element, the group-V element, and a second group-III element, the ratio of the atomic flux of the group-III elements to the atomic flux of the group-V element is in the range from 1 to 1.8.

Abstract: Deposition methods using a Ga-based alloy to incorporate dopants into GaN-based materials are generally described.