Abstract: An apparatus and method for non-contact real-time measurements of temperature and emissivity profiles of radiant targets with unknown spectral emissivity. The selected points or regions on the radiant target are imaged onto an array of photodetectors through an assembly of narrow-band optical filters. Produced multi-wavelength images of the radiant target are processed by the computer workstation and 1D or 2D temperature and emissivity profiles are obtained by means of the curve-fitting of radiometric model of imager sensor response to measured response and performing spatial interpolation of the results. Method for calibration of said apparatus by means of curve-fitting of radiometric model of the apparatus to sensor responses obtained by imaging pre-calibrated blackbody. Method for compensation for inherent non-linearities of pyrometer response.

Abstract: Circuits and systems embodying the invention include an image sensor comprising an array of "M" photo sensing elements arranged in "R" rows and "C" columns, where R and C are integers greater than one and R times C is equal to M. Coupled to each one of the photo sensing elements is a storage register functioning as a local memory, with each storage register comprising N storage elements, where N may range from a few to several hundred (or even several thousand) storage elements. Each photo sensing element is coupled to its associated N storage elements for selectively enabling the high speed transfer of photo information from each photo sensing element to its associated N storage elements during a photo data acquisition phase.

Abstract: An image sensor comprised of an array of photo elements (pixels) includes a device for randomly addressing individual pixels and a device for selectively varying the number of pixels which can be read out on any one reading cycle. The random addressing of pixels enables the readout of pixels located in selected regions of interest. Limiting the readout of the images to areas of interest allows an increase in the frame rate of the images. Relatively large groups of pixels can be read out simultaneously and the resulting signals can be merged into superpixel signals to provide high speed data capture, albeit at relatively lower resolution, since there will be a reduced number of data samples in each image. This feature is useful to rapidly scan and analyze a scene being viewed in order to locate an area of interest. Once an area of interest is located, the number of pixels read out on each cycle may be reduced to provide a higher resolution, lower speed, readout of the area of interest.

Abstract: A semiconductor device and method of making the device in which portions of the device may be completed prior to forming the detector region. The device comprises a substrate, a first insulating layer over the substrate, a first level semiconductor layer over the first insulating layer, a second insulating layer over the semiconductor layer, a metallic contact extending through the second insulating layer and a third insulating layer overlying the contact. A detector region is spaced apart from the contact. The method comprises the steps of forming a first insulating layer over the substrate, forming a semiconductor layer over the first insulating layer, forming a contact through the second insulating layer, forming a third insulating layer over the contact and forming an opening through the first, second and third insulating layers and forming a detector region in the opening.

Abstract: An infra-red charge-coupled device (IR-CCD) image sensor includes a substrate of single crystalline silicon having at one surface thereof a plurality of detectors arranged in space relation along a plurality of columns and a separate charge-coupled device (CCD) register extending along each column of detectors between the columns. Each CCD register includes a buried channel within the substrate and extending along and spaced from the detectors in the adjacent columns and at least two sets of gates extending completely across the space between the columns of detectors and crossing the buried channel. The gates are insulated from this substrate surface by a layer of silicon oxide. A first set of the gates are spaced apart along the column of detectors with each of the first gates having an extension extending over and insulated from the space between two adjacent detectors of one of the adjacent columns.

Abstract: An imager includes a substrate of single crystalline silicon of one conductivity type having opposed major surfaces. A Schottky-barrier detector junction is along one of the major surfaces for converting detected radiation to charge carriers. An array of collecting electrodes is in the other major surface of the substrate and are of the same conductivity as the substrate but of higher conductivity. The collecting electrodes are adapted to collect the charge carriers created at the Schottky-barrier junction when the substrate is depleted. Surrounding the collecting electrodes is a well of the opposite conductivity type which isolates the collecting electrodes from each other. Within the well and along the other major surface of the substrate is transfer means, such as a charge-coupled device or MOS transistor circuit, for transferring the charge carriers from the collecting electrodes to an output.

Abstract: A buried-channel charge-coupled device includes a substrate of semiconductor material of one conductivity type having therein and along a surface thereof a major channel region of the opposite conductivity type and at least one supplemental channel region of the opposite conductivity type. Conductive gates extend across the channel regions and are positioned therealong. The supplemental channel region is of a volume smaller than that of the major channel region and is completely within the major channel region. Also, the supplemental channel region is of a higher conductivity than the major channel region. The supplemental channel region serves to confine small electrical charges so that the small charges can be transferred along the charge-coupled device with good efficiency, particularly when the device is being operated at low temperatures, such as when it is part of an infrared image sensor.

Abstract: A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of the substrate. A plurality of parallel conductive gates are over the one major surface of the substrate and extend transversely across the channel regions. The outermost channel regions of the array are positioned adjacent edges of the substrate so that a plurality of the image sensors can be mounted in edge-to-edge relation with the channel regions of the various sensors being close together. The sensor includes passivating means between each outermost channel region and the adjacent edge to prevent charge carriers generated by the edge from being injected into the outermost channel region.

Abstract: CCD imagers with a novel replicated-line-imager architecture are abutted to form an extended line sensor. The sensor is preceded by optics having a slit aperture and having an optical beam splitter or astigmatic lens for projecting multiple line images through an optical color-discriminating stripe filter to the CCD imagers. A very high resolution camera suitable for use in a satellite, for example, is thus provided. The replicated-line architecture of the imager comprises an area-array CCD, successive rows of which are illuminated by replications of the same line segment, as transmitted by respective color filter stripes. The charge packets formed by accumulation of photoresponsive charge in the area-array CCD are read out row by row. Each successive row of charge packets is then converted from parallel to serial format in a CCD line register and its amplitude sensed to generate a line of output signal.

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.The invention also includes an improved method of forming this array wherein the improvement comprises forming buried barrier regions containing a greater concentration of conductivity modifiers than the channel stops after the blooming drains are formed.

Abstract: The present invention relates to a frame transfer charge-coupled device imager which includes along a major surface of a substrate of semiconductor material a photosensing array A-register, a temporary storage B-register and an output C-register. The C-register includes a channel region in the substrate and extending along the substrate surface across the ends of and substantially perpendicular to spaced, parallel channel regions of the B-register. The C-register also includes a plurality of parallel, conductive gates extending transversely across the C-register channel region substantially parallel to the B-register channel regions. The gates include a plurality of sets with a plurality of gates per set. One gate of each set extends to a conductive termination which extends along one side of the C-register channel region over the B-register and the gates of the other sets extend to conductive terminations which are along the side of the C-register channel region opposite the B-register.

Abstract: The parallelly arranged charge transfer channels in the image register of a field transfer type CCD imager are clocked with a number of phases equal to 2m, m being a positive integer equal to two or more, during image transfer. The successive gate electrodes receiving each cycle of successive-in-time clock phases during image transfer are considered to be consecutively ordinally numbered first through 2m.sup.th. During the image integration times of odd fields, the first gate electrode in each cycle of the image register is biased to induce a potential energy barrier thereunder, and photoresponse charge is collected under the gate electrodes of the image register exclusive of each first gate electrode. During the integration times of even fields, the (m+1).sup.th gate electrode in each gate-electrode cycle of the image register is biased to induce a potential energy barrier thereunder, and photoresponse charge is collected under the gate electrodes of the image register exclusive of each (m+1).sup.

Abstract: Output circuit for charge coupled circuit includes an electrically floating diffusion at the substrate surface. The diffusion is coupled to a surface charge storage location and receives a surface charge signal therefrom. This diffusion may connect to a control electrode at the input circuit for a second charge coupled circuit for controlling the flow of surface charge from a source electrode to a second charge storage location. The diffusion periodically is reset by periodically forming a conduction channel between that diffusion and a drain electrode.

Abstract: An array of infra-red (IR) detectors for a CCD image sensor includes a plurality of spaced areas of a conductive material at the surface of a substrate of semiconductor material of one conductivity type with each conductive area forming a Schottky-barrier diode with the substrate to form the IR detectors. Each detector includes a high conductivity contact region within the substrate. Between the detector area is a guard band which consists of a region of a conductivity type opposite to that of the substrate within the substrate and around said detector area. The guard band is spaced from the contact regions and each conductive area overlaps a portion of its adjacent guard band.

Abstract: An infrared charge-coupled-device (IR-CCD) imager uses an array of Schottky-barrier diodes (SBD's) as photosensing elements and uses a charge-coupled-device (CCD) for arranging charge samples supplied in parallel from the array of SBD's into a succession of serially supplied output signal samples. Its sensitivity to infrared (IR) is improved by placing bias charges on the Schottky barrier diodes. Bias charges are transported to the Schottky barrier diodes by a CCD also used for charge sample read-out.

Abstract: The present invention relates to methods of forming a charge-coupled device (CCD) image sensor which includes in a substrate of semiconductor material a plurality of parallel channel regions, a channel stop region between alternate pairs of adjacent channel regions, a blooming drain region in the channel stop region between the other alternate pairs of adjacent channel regions and a blooming drain barrier region around each blooming drain. The positions of the channel stop regions, the blooming drain regions and the blooming drain barrier regions are defined by a masking layer having openings therethrough and the channel stop regions, blooming drain regions and blooming drain barrier regions are formed by embedding ions of an appropriate conductivity modifier into the substrate through the openings in the masking layer.

Abstract: CCD imagers with pixels at least thirty microns long in the direction of charge transfer have their image registers forward clocked with at least five phases. The length of gate electrodes under which barrier are induced during image integration does not exceed the five to ten microns associated with acceptably low grain. Image integration takes place without applying voltages for inducing potential energy barrier to adjacent gate electrodes in the image register. These measures permit video signals with acceptably low grain to be obtained from these large-pixel images, solving a longstanding problem in the art.

Abstract: An imaging array of the charge transfer type having improved sensitivity is disclosed. The array includes a plurality of substantially parallel charge transfer channels with channel stops therebetween which extend a distance into a semiconductor body. At least some of the channel stops have blooming drains therein for the removal of excess photogenerated charge. The improvement comprises potential barrier means which constrain electrical charge generated by absorption of light in the body to flow into the channels while preventing the loss of such charge by direct flow to the blooming drains. Potential barrier means include buried barrier regions extending a further distance into the body from those channel stops having blooming drain regions therein.

Abstract: At selected times charge packets are simultaneously transferred to the two opposing ends of a charge transfer channel by application of suitable clocking voltages to the gate electrodes overlying that charge transfer channel. Charge packets are introduced into the charge transfer channel during intervening times either by photoresponse to incident radiation or by gating charge packets into respective positions in the charge transfer channel. The technique is especially useful in the A register or C register of a field transfer type of CCD imager.

Abstract: A method of making an imager which includes substrate of single crystalline silicon having on one surface of a plurality of spaced detectors arranged in columns and a charge-coupled device between each pair of columns of the detectors. The charge-coupled devices are formed first with the gates of the charge-coupled devices defining detector areas of the substrate surface. A guard-ring is formed in each detector area with the edges of the gates around the detector area defining one edge of the guard-ring so that the guard-rings are aligned with the edges of the surrounding gates. A layer of insulating material is formed over the detector areas with the portion of the insulating layer over the guard-ring being thicker than the remaining portion of the insulating layer. The thinner portion of the insulating layer is removed leaving the thicker portion over the guard-ring region and with an edge of the thicker portion being substantially in alignment with an edge of the guard-ring region.