Abstract: Provided are a method and device employing a smart contract to realize identity-based key management. The method comprises: running a smart contract, and executing a key management process, wherein the key management process comprises: when a key of a target user requires an update and the target user is not a supervised user, generating a master public key and a master private key pertaining to the target user; acquiring, from a blockchain, identity information of the target user; generating a first target private key according to the master public key and the master private key pertaining to the target user and the identity information of the target user; and replacing a current private key of the target user with the first target private key.

Abstract: The present invention relates to a scalable process for the purification of human cytomegalovirus particles from cell culture medium. In particular, the process involves a two step chromatography process starting with an anion exchange chromatography step followed by a polishing chromatography step selected from mixed mode chromatography or cation exchange chromatography.

Abstract: A method, a device and an apparatus for planning a vehicle speed are provided. The method includes: determining initial planning speeds at a target path point and a reference path point based on curvature radiuses of a target front road and a reference front road, such that first and second lateral accelerations are not greater than a lateral acceleration threshold; and determining a target longitudinal acceleration and a target planning speed at the target path point based on the initial planning speeds at the target path point and the reference path point and a reference journey, such that the target longitudinal acceleration is in a defined range. Therefore, a vehicle can drive based on the target planning speed and the target longitudinal acceleration at the target path point, thereby avoiding drastic deceleration and lateral offset, improving driving safety of the vehicle and riding comfort and saving energy.

Abstract: A method, a device and an apparatus for planning a vehicle speed are provided. The method includes: determining initial planning speeds at a target path point and a reference path point based on curvature radiuses of a target front road and a reference front road, such that first and second lateral accelerations are not greater than a lateral acceleration threshold; and determining a target longitudinal acceleration and a target planning speed at the target path point based on the initial planning speeds at the target path point and the reference path point and a reference journey, such that the target longitudinal acceleration is in a defined range. Therefore, a vehicle can drive based on the target planning speed and the target longitudinal acceleration at the target path point, thereby avoiding drastic deceleration and lateral offset, improving driving safety of the vehicle and riding comfort and saving energy.

Abstract: The invention provides a power semiconductor device and a method of fabricating the same and a cutoff ring. A cutoff ring located at a periphery of an active area of the power semiconductor device is etched forming at least one trench below which an implant area is formed by implanting ions into the trench, and a silicon dioxide dielectric layer covering the trench and a surface of the active area, are formed. Since the ions are implanted into the trench formed by etching the cutoff ring to thereby increase a depth of the implanted ions and a density of the cutoff ring, a width of the cutoff ring can be shortened to thereby address the technical problem of a considerable area of a chip occupied by the cutoff ring and improve a utilization ratio of the area of the chip so as to lower a cost of fabricating the chip.

Abstract: The invention discloses a method of fabricating a GOI silicon wafer, a GOI silicon wafer, and a method of GOI detection on the fabricated GOI silicon wafer, where the method of fabricating a GOI silicon wafer includes: in a process of fabricating a trench-type VDMOS, after a trench is formed and a gate oxide layer is grown, a poly-silicon layer is grown; and after the poly-silicon layer is grown, a mask of a metal layer is aligned with a silicon substrate with the poly-silicon layer grown, where the mask of the metal layer is a mask used in formation of the metal layer in the process of fabricating the VDMOS; and at least one pattern for GOI detection is formed on the silicon substrate with the poly-silicon layer grown, through the aligned mask of the metal layer in a photo-lithography to form a GOI silicon wafer.

Abstract: The invention provides a power semiconductor device and a method of fabricating the same and a cutoff ring. A cutoff ring located at a periphery of an active area of the power semiconductor device is etched forming at least one trench below which an implant area is formed by implanting ions into the trench, and a silicon dioxide dielectric layer covering the trench and a surface of the active area, are formed. Since the ions are implanted into the trench formed by etching the cutoff ring to thereby increase a depth of the implanted ions and a density of the cutoff ring, a width of the cutoff ring can be shortened to thereby address the technical problem of a considerable area of a chip occupied by the cutoff ring and improve a utilization ratio of the area of the chip so as to lower a cost of fabricating the chip.

Abstract: Methods, compositions and articles of manufacture involving soluble conjugated polymers are provided. The conjugated polymers have a sufficient density of polar substituents to render them soluble in a polar medium, for example water and/or methanol. The conjugated polymer may desirably comprise monomers which alter its conductivity properties. In some embodiments, the inventors have provided cationic conjugated polymers (CCPs) comprising both solubilizing groups and conductive groups, resulting in conductive conjugated polymers soluble in polar media. The different solubility properties of these polymers allow their deposition in solution in multilayer formats with other conjugated polymers. Also provided are articles of manufacture comprising multiple layers of conjugated polymers having differing solubility characteristics. Embodiments of the invention are described further herein.

Abstract: Methods, compositions and articles of manufacture involving soluble conjugated polymers are provided. The conjugated polymers have a sufficient density of polar substituents to render them soluble in a polar medium, for example water and/or methanol. The conjugated polymers may desirably comprise monomers which alter their conductivity properties. The different solubility properties of these polymers allow their deposition in solution in multilayer formats with other conjugated polymers. Also provided are articles of manufacture comprising multiple layers of conjugated polymers having differing solubility characteristics. Embodiments of the invention are described further herein.

Abstract: The invention discloses a method of fabricating a GOI silicon wafer, a GOI silicon wafer, and a method of GOI detection on the fabricated GOI silicon wafer, where the method of fabricating a GOI silicon wafer includes: in a process of fabricating a trench-type VDMOS, after a trench is formed and a gate oxide layer is grown, a poly-silicon layer is grown; and after the poly-silicon layer is grown, a mask of a metal layer is aligned with a silicon substrate with the poly-silicon layer grown, where the mask of the metal layer is a mask used in formation of the metal layer in the process of fabricating the VDMOS; and at least one pattern for GOI detection is formed on the silicon substrate with the poly-silicon layer grown, through the aligned mask of the metal layer in a photo-lithography to form a GOI silicon wafer.

Abstract: Methods, compositions and articles of manufacture involving soluble conjugated polymers are provided. The conjugated polymers have a sufficient density of polar substituents to render them soluble in a polar medium, for example water and/or methanol. The conjugated polymer may desirably comprise monomers which alter its conductivity properties. In some embodiments, the inventors have provided cationic conjugated polymers (CCPs) comprising both solubilizing groups and conductive groups, resulting in conductive conjugated polymers soluble in polar media. The different solubility properties of these polymers allow their deposition in solution in multilayer formats with other conjugated polymers. Also provided are articles of manufacture comprising multiple layers of conjugated polymers having differing solubility characteristics. Embodiments of the invention are described further herein.

Abstract: Processing additives, as well as related compositions, photovoltaic cells, photovoltaic modules, and methods, are disclosed.

Abstract: The present invention provides a photovoltaic device. In an exemplary embodiment, the photovoltaic device includes a substrate having a thin film disposed thereon, where the thin film includes alloyed ternary nanocrystals. The present invention provides also provides a method of making ternary compound nanocrystals. In an exemplary embodiment, the method includes (1) degassing a solution of PbO, oleic acid and 1-octadecene (ODE) in a container, (2) heating the solution in the container, (3) injecting a first mixture of trioctylphosphine (TOP):Se solution, TMS2S, diphenylphosphine (DPP) and ODE into the heated solution, thereby forming a second mixture in the container, (4) adding ODE to the second mixture in the container, (5) growing the nanocrystals in the second mixture in a reaction in the container, and (6)_quenching the reaction, thereby resulting in precipitated nanocrystals in the container. In a further embodiment, the present invention further includes purifying the precipitated nanocrystals.

Abstract: White light-emitting electrophosphorescent polymeric light-emitting diodes (PLEDs) are demonstrated using semiconducting polymers blended with organometallic emitters as emissive materials in a common region. These materials may be cast from solution. The CIE coordinates, the color temperatures and the color rendering indices of the white emission are insensitive to the brightness, applied voltage and applied current density.

Abstract: Processing additives, as well as related compositions, photovoltaic cells, photovoltaic modules, and methods, are disclosed.

Abstract: White light-emitting electrophosphorescent polymeric light-emitting diodes (PLEDs) are demonstrated using semiconducting polymers blended with organometallic emitters as emissive materials in a common region. These materials may be cast from solution. The CIE coordinates, the color temperatures and the color rendering indices of the white emission are insensitive to the brightness, applied voltage and applied current density.