Patents by Inventor Wataru Yoshikawa
Wataru Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230339032Abstract: An anodic oxidation-assisted grinding apparatus includes an electrolyte supply passage configured to pour an electrolyte at least between a cathode and a workpiece, a direct current power source configured to apply a direct current, via the electrolyte, to an anode, the cathode, and the workpiece to form an anodic oxidation film on a surface of the workpiece, and a grindstone configured to grind the anodic oxidation film formed on the surface of the workpiece.Type: ApplicationFiled: April 20, 2023Publication date: October 26, 2023Applicant: JTEKT MACHINE SYSTEMS CORPORATIONInventors: Wataru YOSHIKAWA, Haruyuki HIRAYAMA, Tomohisa KATO
-
Publication number: 20230036846Abstract: Provided are a pellicle film, a pellicle, an original plate for exposure, an exposure device, a method of producing a semiconductor device, and a method of producing a pellicle, the pellicle film containing carbon nanotubes having a silicon carbide layer in which at least a part of carbon is substituted with silicon at least on a surface layer side.Type: ApplicationFiled: February 16, 2021Publication date: February 2, 2023Applicant: MITSUI CHEMICALS, INC.Inventors: Atsushi OKUBO, Kazuo KOHMURA, Hisako ISHIKAWA, Yosuke ONO, Yasuhisa FUJII, Wataru YOSHIKAWA, Nobuko MATSUMOTO, Tomoe DEGUCHI
-
Patent number: 10896842Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.Type: GrantFiled: April 30, 2018Date of Patent: January 19, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Wataru Yoshikawa, Kazuki Moyama, Nobuyuki Okayama, Kenji Sudou, Yasuhiro Otsuka
-
Publication number: 20190121229Abstract: Provided is a pellicle film, a pellicle frame and a pellicle for EUV decreased in the amount of dust or the like attached thereto, and a method for producing the same. Provided is a method for producing a pellicle including forming a pellicle film above a substrate; forming a metal mask on a surface of the substrate opposite to a surface having the pellicle film formed thereon; removing a part of the substrate from the side of the metal mask; and removing the metal mask. In an embodiment, the present invention provides a pellicle film, a pellicle frame and a pellicle for EUV decreased in the amount of dust or the like attached thereto, and a method for producing the same.Type: ApplicationFiled: December 17, 2018Publication date: April 25, 2019Applicant: MITSUI CHEMICALS, INC.Inventors: Atsushi Okubo, Yosuke Ono, Kazuo Kohmura, Yasuhisa Fujii, Wataru Yoshikawa
-
Patent number: 10144040Abstract: A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.Type: GrantFiled: October 17, 2012Date of Patent: December 4, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Wataru Yoshikawa, Naoki Matsumoto
-
Publication number: 20180286740Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.Type: ApplicationFiled: April 30, 2018Publication date: October 4, 2018Inventors: Wataru YOSHIKAWA, Kazuki MOYAMA, Nobuyuki OKAYAMA, Kenji SUDOU, Yasuhiro OTSUKA
-
Patent number: 9595425Abstract: An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.Type: GrantFiled: July 5, 2012Date of Patent: March 14, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Naoki Matsumoto, Wataru Yoshikawa, Jun Yoshikawa, Kazuki Moyama, Kiyotaka Ishibashi, Osamu Morita, Takehiro Tanikawa
-
Patent number: 9111726Abstract: A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.Type: GrantFiled: April 24, 2012Date of Patent: August 18, 2015Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuki Moyama, Kiyotaka Ishibashi, Osamu Morita, Takehiro Tanikawa, Naoki Matsumoto, Naoki Mihara, Wataru Yoshikawa
-
Patent number: 8988012Abstract: In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.Type: GrantFiled: March 24, 2011Date of Patent: March 24, 2015Assignee: Tokyo Electron LimitedInventors: Wataru Yoshikawa, Naoki Matsumoto, Jun Yoshikawa
-
Publication number: 20150053346Abstract: A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed.Type: ApplicationFiled: November 4, 2014Publication date: February 26, 2015Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki MATSUMOTO, Wataru YOSHIKAWA, Yasuhiro SEO, Kazuyuki KATO
-
Patent number: 8889023Abstract: A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed.Type: GrantFiled: December 27, 2012Date of Patent: November 18, 2014Assignee: Tokyo Electron LimitedInventors: Naoki Matsumoto, Wataru Yoshikawa, Yasuhiro Seo, Kazuyuki Kato
-
Publication number: 20140299152Abstract: A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.Type: ApplicationFiled: October 17, 2012Publication date: October 9, 2014Inventors: Wataru Yoshikawa, Naoki Matsumoto
-
Publication number: 20130093321Abstract: In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.Type: ApplicationFiled: March 24, 2011Publication date: April 18, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Wataru Yoshikawa, Naoki Matsumoto, Jun Yoshikawa
-
Publication number: 20130008607Abstract: An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.Type: ApplicationFiled: July 5, 2012Publication date: January 10, 2013Applicant: TOKYO ELECTRON LIMITEDInventors: Naoki MATSUMOTO, Wataru YOSHIKAWA, Jun YOSHIKAWA, Kazuki MOYAMA, Kiyotaka ISHIBASHI, Osamu MORITA, Takehiro TANIKAWA
-
Publication number: 20120267048Abstract: A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.Type: ApplicationFiled: April 24, 2012Publication date: October 25, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuki Moyama, Kiyotaka Ishibashi, Osamu Morita, Takehiro Tanikawa, Naoki Matsumoto, Naoki Mihara, Wataru Yoshikawa
-
Publication number: 20120241090Abstract: A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.Type: ApplicationFiled: March 26, 2012Publication date: September 27, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Jun Yoshikawa, Naoki Matsumoto, Naoki Mihara, Wataru Yoshikawa, Shota Yoshimura, Kazuki Takahashi
-
Publication number: 20120211165Abstract: A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table.Type: ApplicationFiled: September 29, 2010Publication date: August 23, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Wataru Yoshikawa, Kazuki Moyama, Nobuyuki Okayama, Kenji Sudou, Yasuhiro Otsuka
-
Patent number: 5916770Abstract: The present invention relates to a macrophage stimulating protein wherein a cysteine residue at position 672 from the N-terminus in the amino acid sequence of native form macrophage stimulating protein is deleted or substituted by another amino acid residue, e.g., an alanine residue; a DNA fragment encoding the protein; a recombinant vector including the DNA fragment; a host cell transformed with the recombinant vector; and a method for culturing the transformed host cell and recovering a macrophage stimulating protein variant from the cultured host cell.Type: GrantFiled: June 19, 1996Date of Patent: June 29, 1999Assignee: Toyo Boseki Kabushiki KaishaInventors: Wataru Yoshikawa, Manabu Shimonishi, Junko Iwamoto, Toyohiro Takehara, Michio Hagiya
-
Patent number: D645486Type: GrantFiled: September 10, 2010Date of Patent: September 20, 2011Assignee: Tokyo Electron LimitedInventors: Wataru Yoshikawa, Naoki Matsumoto, Jun Yoshikawa
-
Patent number: D672377Type: GrantFiled: September 10, 2010Date of Patent: December 11, 2012Assignee: Tokyo Electron LimitedInventors: Wataru Yoshikawa, Naoki Matsumoto, Jun Yoshikawa