Patents by Inventor Wei-Chieh Chiang

Wei-Chieh Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11862650
    Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.
    Type: Grant
    Filed: January 19, 2022
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Chien Yu, Ting-Cheng Chang, Wen-Hau Wu, Chih-Kung Chang
  • Patent number: 11862654
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Chin-Chia Kuo, Wen-Hau Wu, Hua-Mao Chen, Chih-Kung Chang
  • Publication number: 20230402483
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.
    Type: Application
    Filed: August 8, 2023
    Publication date: December 14, 2023
    Inventors: Keng-Yu Chou, Cheng Yu Huang, Chun-Hao Chuang, Wen-Hau Wu, Wei-Chieh Chiang, Wen-Chien Yu, Chih-Kung Chang
  • Publication number: 20230402477
    Abstract: The present disclosure describes a three-chip complementary metal-oxide-semiconductor (CMOS) image sensor and a method for forming the image sensor. The image sensor a first chip including a plurality of image sensing elements, transfer transistors and diffusion wells corresponding to the plurality of image sensing elements, a ground node shared by the plurality of image sensing elements, and deep trench isolation (DTI) structures extending from the shared ground node and between adjacent image sensing elements of the plurality of image sensing elements. The image sensor further includes a second chip bonded to the first chip and including a source follower, a reset transistor, a row select transistor, and an in-pixel circuit, where the source follower is electrically coupled to the diffusion wells. The image sensor further includes a third chip bonded to the second chip and including an application-specific circuit, where the application-specific circuit is electrically coupled to the in-pixel circuit.
    Type: Application
    Filed: June 10, 2022
    Publication date: December 14, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hao CHUANG, Keng-Yu CHOU, Cheng Yu HUANG, Wen-Hau WU, Wei-Chieh CHIANG, Chih-Kung CHANG, Tzu-Hsuan HSU
  • Publication number: 20230369366
    Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Jen-Cheng Liu, Kazuaki Hashimoto, Ming-En Chen, Shyh-Fann Ting, Shuang-Ji Tsai, Wei-Chieh Chiang
  • Publication number: 20230369363
    Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 16, 2023
    Inventors: Wen-Hau Wu, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Cheng Yu Huang
  • Publication number: 20230361147
    Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes forming a first image sensor element within a first substrate and a second image sensor element within a second substrate. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths and the second image sensor element is configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths. A plurality of deposition processes are performed to form a band-pass filter over the second substrate. The band-pass filter has a plurality of alternating layers of a first material having a first refractive index and a second material having a second refractive index that is less than the first refractive index. The first substrate is bonded to the band-pass filter.
    Type: Application
    Filed: July 17, 2023
    Publication date: November 9, 2023
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 11764239
    Abstract: A method for forming an image sensor package is provided. An image sensor chip is formed over a package substrate. A protection layer is formed overlying the image sensor chip. The protection layer has a planar top surface and a bottom surface lining and contacting structures under the protection layer. An opening is formed into the protection layer and spaced around a periphery of the image sensor chip. A light shielding material is filled in the opening to form an on-wafer shield structure having a sidewall directly contact the protection layer.
    Type: Grant
    Filed: February 10, 2022
    Date of Patent: September 19, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hau Wu, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Cheng Yu Huang
  • Patent number: 11764248
    Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: September 19, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Publication number: 20230261011
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.
    Type: Application
    Filed: April 24, 2023
    Publication date: August 17, 2023
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Kazuaki Hashimoto, Wei-Chieh Chiang, Cheng Yu Huang, Wen-Hau Wu, Chih-Kung Chang
  • Patent number: 11699718
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. The first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: July 11, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Chieh Chiang, Keng-Yu Chou, Chun-Hao Chuang, Wen-Hau Wu, Jhy-Jyi Sze, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Patent number: 11670647
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first phase detection autofocus (PDAF) photodetector and a second PDAF photodetector in a substrate. A first electromagnetic radiation (EMR) diffuser is disposed along a back-side of the substrate and within a perimeter of the first PDAF photodetector. The first EMR diffuser is spaced a first distance from a first side of the first PDAF photodetector and a second distance less than the first distance from a second side of the first PDAF photodetector. A second EMR diffuser is disposed along the back-side of the substrate and within a perimeter of the second PDAF photodetector. The second EMR diffuser is spaced a third distance from a first side of the second PDAF photodetector and a fourth distance less than the third distance from a second side of the second PDAF photodetector.
    Type: Grant
    Filed: February 1, 2022
    Date of Patent: June 6, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Kazuaki Hashimoto, Wei-Chieh Chiang, Cheng Yu Huang, Wen-Hau Wu, Chih-Kung Chang
  • Patent number: 11658196
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Keng-Yu Chou, Wei-Chieh Chiang, Chen-Jong Wang, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Patent number: 11646340
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: May 9, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wen-Hau Wu, Keng-Yu Chou, Chun-Hao Chuang, Wei-Chieh Chiang, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Publication number: 20220359583
    Abstract: Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.
    Type: Application
    Filed: August 25, 2021
    Publication date: November 10, 2022
    Inventors: Cheng Yu Huang, Wei-Chieh Chiang, Keng-Yu Chou, Chun-Hao Chuang, Wen-Hau Wu, Chih-Kung Chang
  • Publication number: 20220336518
    Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei Chieh Chiang, Wen-Hau Wu, Chih-Kung Chang
  • Publication number: 20220328535
    Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.
    Type: Application
    Filed: July 12, 2021
    Publication date: October 13, 2022
    Inventors: Cheng Yu Huang, Wei-Chieh Chiang, Keng-Yu Chou, Tzu-Hsuan Hsu
  • Publication number: 20220320173
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.
    Type: Application
    Filed: March 30, 2021
    Publication date: October 6, 2022
    Inventors: Keng-Yu Chou, Cheng Yu Huang, Chun-Hao Chuang, Wen-Hau Wu, Wei-Chieh Chiang, Wen-Chien Yu, Chih-Kung Chang
  • Publication number: 20220302194
    Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.
    Type: Application
    Filed: March 18, 2021
    Publication date: September 22, 2022
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu, Chih-Kung Chang
  • Patent number: 11404468
    Abstract: Various embodiments of the present application are directed towards an image sensor including a wavelength tunable narrow band filter, as well as methods for forming the image sensor. In some embodiments, the image sensor includes a substrate, a first photodetector, a second photodetector, and a filter. The first and second photodetectors neighbor in the substrate. The filter overlies the first and second photodetectors and includes a first distributed Bragg reflector (DBR), a second DBR, and a first interlayer between the first and second DBRs. A thickness of the first interlayer has a first thickness value overlying the first photodetector and a second thickness value overlying the second photodetector. In some embodiments, the filter is limited to a single interlayer. In other embodiments the filter further includes a second interlayer defining columnar structures embedded in the first interlayer and having a different refractive index than the first interlayer.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: August 2, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu, Chih-Kung Chang