Patents by Inventor Wei-Je Lin

Wei-Je Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF FORMING SEMICONDUCTOR DEVICE
    Publication number: 20220293494
    Abstract: A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.
    Type: Application
    Filed: May 30, 2022
    Publication date: September 15, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Semiconductor devices
    Patent number: 11387168
    Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: July 12, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • SEMICONDUCTOR DEVICES
    Publication number: 20200343162
    Abstract: A semiconductor device includes a first conductive layer, an organic layer and a silicon layer. The first conductive layer includes a first surface. The organic layer is disposed over the first surface of the first conductive layer. The silicon layer is disposed over the organic layer and extended onto and in contact with the first surface of the first conductive layer.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • Semiconductor devices and methods of forming the same
    Patent number: 10741477
    Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: August 11, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Lung Yang, Chih-Hung Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin
  • SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME
    Publication number: 20190295925
    Abstract: Semiconductor devices and methods of forming the same are disclosed. One of the semiconductor devices includes a first conductive layer, an organic layer, a silicon layer, a magnetic layer and a second conductive layer. The organic layer is disposed over and exposes a portion of the first conductive layer. The silicon layer is disposed on and in contact with the organic layer. The magnetic layer is disposed over the first conductive layer. The second conductive layer is disposed over the organic layer and the magnetic layer to electrically connect the first conductive layer.
    Type: Application
    Filed: March 23, 2018
    Publication date: September 26, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Lung Yang, CHIH-HUNG Su, Chen-Shien Chen, Hon-Lin Huang, Kun-Ming Tsai, Wei-Je Lin