Abstract: A semiconductor structure includes a conductive feature on a substrate. A plurality of first dielectric layers are disposed on the conductive feature, and stress directions of at least two of the first dielectric layers are different from one another. A first hole penetrates through the plurality of the first dielectric layers to expose the conductive feature. A first conductive plug conformally covers the first hole and is electrically connected to the conductive feature. A first insulating plug on the first conductive plug fills the first hole.

Abstract: A semiconductor structure includes a conductive feature on a substrate. A plurality of first dielectric layers are disposed on the conductive feature, and stress directions of at least two of the first dielectric layers are different from one another. A first hole penetrates through the plurality of the first dielectric layers to expose the conductive feature. A first conductive plug conformally covers the first hole and is electrically connected to the conductive feature. A first insulating plug on the first conductive plug fills the first hole.

Abstract: A measurement device measuring a solution and including a reference voltage generating unit, a plurality of sensing units, a reading unit and a processing unit is disclosed. The reference voltage generating unit is disposed in the solution to generate a reference voltage. The sensing units are disposed in the solution to generate a plurality of output signals relating to the reference voltage. The reading unit outputs a reading signal according to one of the output signals. The processing unit generates a measuring signal according to the reading signals.

Abstract: A calcium ion sensor is provided. The calcium ion sensor includes a metal oxide semiconductor field effect transistor, a sensing unit including a substrate, a ruthenium dioxide membrane formed thereon and a calcium ion sensing membrane formed on the ruthenium dioxide membrane, and a conductive wire connecting the metal oxide semiconductor field effect transistor and the sensing unit. The invention also provides a method for fabricating a calcium ion sensor, and a sensing system including the sensor.