Patents by Inventor Wei Yin

Wei Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10872897
    Abstract: A semiconductor structure includes a first metal gate disposed over a first device region of a semiconductor substrate, where the first metal gate includes a first work function metal layer, a second metal gate disposed over a second device region of the semiconductor substrate, where the second metal gate includes a second work function metal layer, a first gate cut feature separating the first metal gate, where sidewalls of the first gate cut feature are defined by the first work function metal layer and a bulk conductive layer, and a second gate cut feature separating the second metal gate, where sidewalls of the second gate cut feature are defined by the second work function metal layer but not by the bulk conductive layer.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Li-Wei Yin, Shu-Yuan Ku, Chun-Fai Cheng
  • Publication number: 20200392250
    Abstract: Provided are applications of a hexokinase 2-specific inhibitor in preparing a medicament for preventing and treating acute central nervous system injury.
    Type: Application
    Filed: February 6, 2018
    Publication date: December 17, 2020
    Applicant: Guangzhou Cellprotek Pharmaceutical Co., Ltd.
    Inventors: Guangmei YAN, Wei YIN, Yuan LI, Bingzheng LU, Longxiang SHENG
  • Patent number: 10835539
    Abstract: Use of 5?-androstane-3?,5,6?-triol and analogs thereof in the preparation of a drug for the prophylaxis or treatment of an altitude sickness caused by hypobaric hypoxia is provided, so as to provide a new drug for the prophylaxis or treatment of an altitude sickness. Researches revealed that 5?-androstane-3?,5,6?-triol treatment can effectively reduce vasogenic edema of brain tissue of Macaca fascicularis caused by hypobaric hypoxia, reduce the increased cerebral water content, and protect from neuronal vacuolar degeneration caused by hypobaric hypoxia, therefore it can improve neurological dysfunctions caused by hypobaric hypoxia and is useful in prophylaxis or treatment of an altitude sickness.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: November 17, 2020
    Assignee: Guangzhou Cellprotek Pharmaceutical Co., Ltd.
    Inventors: Wei Yin, Jiesi Chen, Guangmei Yan, Bingzheng Lu, Wenbo Zhu, Haiyan Hu, Pengxin Qiu, Yijun Huang, Jingxia Zhang
  • Publication number: 20200339558
    Abstract: The present invention generally relates to an isoxazole derivative, a preparation therefor, and a use thereof. In particular, the present invention provides a farnesoid X receptor (FXR) agonist compound, and a stereoisomer, a tautomer, a polymorph, a solvate (e.g., a hydrate), a pharmaceutically acceptable salt, an ester, a metabolite, and an N-oxide, and the chemically protected forms and prodrugs thereof. The present invention further provides a preparation method for the compound, an intermediate thereof, and a pharmaceutical composition and kit containing the same and used thereof for treating FXR-mediated diseases or conditions.
    Type: Application
    Filed: December 7, 2018
    Publication date: October 29, 2020
    Applicant: SICHUAN KELUN-BiOTECH BIGPHARMACEUTICAL CO., LTD.
    Inventors: JINMING LIU, JIAQIANG CAI, YONGYONG WU, WEI YIN, LUCHUN WANG, JINGYI WANG
  • Publication number: 20200330483
    Abstract: Disclosed is use of 5?-androst-3?,5,6?-triol or an analogue, a deuterated compound or a pharmaceutically acceptable salt thereof in the manufacture of a medicament for the treatment of cerebral small vessel disease in a patient. The cerebral small vessel disease is preferably cerebral microbleed. The cerebral microbleed is spontaneous cerebral microbleed, drug-related cerebral microbleed, or traumatic cerebral microbleed. The present invention demonstrates that these compounds significantly enhance the clearance of extravascular hemoglobin, and thus can be used to treat cerebral small vessel disease.
    Type: Application
    Filed: December 28, 2018
    Publication date: October 22, 2020
    Applicant: GUANGZHOU CELLPROTEK PHARMACEUTICAL CO., LTD
    Inventors: Guangmei YAN, Wei YIN, Longxiang SHENG, Bingzheng LU, Yijun HUANG, Suizhen LIN
  • Patent number: 10809207
    Abstract: The present disclosure provides a ray calibration device and a working method thereof, and a radiation imaging system and a working method thereof, and belongs to the field of radiation imaging technology. The present disclosure can solve the problems that the existing calibration devices have low calibration efficiency and require relatively large spaces. The ray calibration device of the present disclosure includes a driving part, a cam part and a calibration part, wherein the calibration part is located below the cam part; the driving part is adapted to drive the cam part to rotate; and the cam part is adapted to exert a force on the calibration part to enable the calibration part to move into a ray area downwards.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: October 20, 2020
    Inventors: Zhiqiang Chen, Yumei Chen, Yaohong Liu, Xinshui Yan, Weiqiang Guan, Wei Yin
  • Publication number: 20200279854
    Abstract: A semiconductor structure includes a first metal gate disposed over a first device region of a semiconductor substrate, where the first metal gate includes a first work function metal layer, a second metal gate disposed over a second device region of the semiconductor substrate, where the second metal gate includes a second work function metal layer, a first gate cut feature separating the first metal gate, where sidewalls of the first gate cut feature are defined by the first work function metal layer and a bulk conductive layer, and a second gate cut feature separating the second metal gate, where sidewalls of the second gate cut feature are defined by the second work function metal layer but not by the bulk conductive layer.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Li-Wei Yin, Shu-Yuan Ku, Chun-Fai Cheng
  • Publication number: 20200188178
    Abstract: Disclosures of the present invention describe a double-layer dressing containing silk fibroin and a method for making the same. The double-layer dressing mainly comprises a silk fibroin layer and a calcium-degradation silk fibroin layer connected to the silk fibroin layer. It is worth emphasizing that, results of animal experiment have proved that this novel double-layer dressing is an outstanding hemostatic wound dressing. Moreover, additional adhesion, resulted from the solidification of tissue fluid, can be effectively prevented from forming between skin wound and wound dressing under the use of this double-layer dressing.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 18, 2020
    Inventors: MENG-YI BAI, MENG-CHUAN CHEN, JIA-YING LIN, WEI-YIN CHEN
  • Patent number: 10658372
    Abstract: A method includes providing metal gate structures in a first and a second region, respectively, of a semiconductor substrate, simultaneously cutting the metal gate structures by a two-step etching process to form a first and a second trench in metal gate structures of the first and the second region, respectively, and filling each trench with an insulating material to form a first and a second gate isolation structure. Each step of the two-step etching process employs different etching chemicals and conditions. The metal gate structures in the first region and the second region differ in gate lengths and composition of gate electrode.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: May 19, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Li-Wei Yin, Shu-Yuan Ku, Chun-Fai Cheng
  • Publication number: 20200126868
    Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.
    Type: Application
    Filed: June 3, 2019
    Publication date: April 23, 2020
    Inventors: Shiang-Bau Wang, Li-Wei Yin, Chen-Huang Huang, Ming-Jhe Sie, Ryan Chia-Jen Chen
  • Patent number: 10578765
    Abstract: This invention provides a scan method, scan system and radiation scan controller, and relates to the field of radiation. The scanning method includes obtaining detection data of an object to be inspected under radiation scanning using a detector, adjusting an accelerator output beam dose rate and/or an output electron beam energy level of a radiation emission device according to the detection data. With this method, working conditions of the accelerator of the radiation emission device may be adjusted according to the detection data detected by the detector, so that for a region having a larger mass thickness, a higher output beam dose rate or a higher electron beam output energy level is adopted to guarantee satisfied imaging technical indexes, for a region having a smaller mass thickness, a lower output beam dose rate or a lower electron beam output energy level is adopted to reduce the environmental dose level while guaranteeing satisfied imaging technical indexes.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: March 3, 2020
    Inventors: Kejun Kang, Yaohong Liu, Ziran Zhao, Wei Jia, Jianping Gu, Chuanxiang Tang, Huaibi Chen, Jianjun Gao, Wei Yin, Xiying Liu
  • Publication number: 20200059093
    Abstract: Disclosed are a dynamic lightning protection method and system. The method includes detecting lightning in real time and tracking a position of a thunderstorm; and performing dynamic lightning protection and control on an electrical grid according to an electrical grid control strategy before the thunderstorm reaches or affects the electrical grid. Further disclosed is a dynamic lightning protection system.
    Type: Application
    Filed: July 13, 2018
    Publication date: February 20, 2020
    Inventors: Chong TONG, Yunfeng CAI, Ziyang ZHANG, Qing WANG, Kang DAI, Wei YIN
  • Publication number: 20200042408
    Abstract: A distributed system for creating a consistency snapshot for a distributed application includes a control node and multiple execution nodes including a source execution node, an intermediate execution node, and a leaf execution node. The source execution node receives a snapshot event, and generates a single-point snapshot of an application instance associated with the source execution node. Each of the intermediate execution node and the leaf execution node sequentially receives snapshot events separately sent by two parent nodes of the respective nodes, generates a single-point snapshot of an application instance associated with the respective nodes after receiving the first snapshot event, records a log of a task when executing the task triggered by another parent node different from a parent node sending the first snapshot event, and stops recording a log of a task triggered each time one snapshot event sent by a parent node is received subsequently.
    Type: Application
    Filed: September 26, 2019
    Publication date: February 6, 2020
    Inventors: Wei YIN, Bin LUO
  • Publication number: 20200044070
    Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin parallel to each other and protruding higher than top surfaces of isolation regions. The isolation regions include a portion between the first and the second semiconductor fins. The method further includes forming a gate stack crossing over the first and the second semiconductor fins, etching a portion of the gate stack to form an opening, wherein the portion of the isolation regions, the first semiconductor fin, and the second semiconductor fin are exposed to the opening, etching the first semiconductor fin, the second semiconductor fin, and the portion of the isolation regions to extend the opening into a bulk portion of a semiconductor substrate below the isolation regions, and filling the opening with a dielectric material to form a cut-fin isolation region.
    Type: Application
    Filed: October 5, 2018
    Publication date: February 6, 2020
    Inventors: Shiang-Bau Wang, Li-Wei Yin, Shao-Hua Hsu
  • Patent number: 10551340
    Abstract: The present invention provides capacitor-based fluid sensing units. The capacitor-based fluid sensing unit comprises a substrate, a first electrode configured on the substrate, a sensing layer configured on the first electrode, a second electrode configured on the sensing layer. More particularly, the second electrode is a porous electrode, while the sensing layer is made of a porous dielectric material and has a thickness between 50 nm and 5 mm. Permittivity of the sensing layer changes as fluid permeates from the second electrode to the sensing layer. The subsequent change in capacitance of the capacitor-based fluid sensing unit is used to determine the volume of the fluid.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: February 4, 2020
    Assignee: CHANG GUNG UNIVERSITY
    Inventors: Chao-Sung Lai, Chia-Ming Yang, Hsin-Yin Peng, Wei-Yin Zeng, Chun-Hui Chen
  • Publication number: 20200020701
    Abstract: A method includes providing metal gate structures in a first and a second region, respectively, of a semiconductor substrate, simultaneously cutting the metal gate structures by a two-step etching process to form a first and a second trench in metal gate structures of the first and the second region, respectively, and filling each trench with an insulating material to form a first and a second gate isolation structure. Each step of the two-step etching process employs different etching chemicals and conditions. The metal gate structures in the first region and the second region differ in gate lengths and composition of gate electrode.
    Type: Application
    Filed: September 23, 2019
    Publication date: January 16, 2020
    Inventors: Li-Wei Yin, Shu-Yuan Ku, Chun-Fai Cheng
  • Patent number: 10534767
    Abstract: A method, computer program product and/or computer system assigns access to a quorum disk in a split-storage cluster environment when a communication link between storage systems fails. Access to the quorum disk is based on storage system I/O performance. Priority is given to the storage system that has a higher performance before the link failure. When the communication link fails, both storage systems attempt to access the quorum disk. If the system that first attempts to access the quorum disk is the non-priority storage system, a timer is started. If the priority system attempts to access the quorum disk within a predetermined time interval, the priority system locks the quorum disk and forms the cluster. If the priority system does not attempt to access the quorum disk within the predetermined time interval, the non-priority system locks the quorum disk and forms the cluster.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: January 14, 2020
    Assignee: International Business Machines Corporation
    Inventors: Miao Ke Cao, Wei Yin, Ning Zhao
  • Patent number: 10495776
    Abstract: This invention provides a scan method, scan system and radiation scan controller, and relates to the field of radiation. Wherein, the scan method of this invention comprises: obtaining detection data of an object to be inspected under radiation scanning using a detector; adjusting an accelerator output beam dose rate and/or an output electron beam energy level of a radiation emission device according to the detection data. With this method, working conditions of the accelerator of the radiation emission device may be adjusted according to the detection data detected by the detector, so that for a region having a larger mass thickness, a higher output beam dose rate or a higher electron beam output energy level is adopted to guarantee satisfied imaging technical indexes, for a region having a smaller mass thickness, a lower output beam dose rate or a lower electron beam output energy level is adopted to reduce the environmental dose level while guaranteeing satisfied imaging technical indexes.
    Type: Grant
    Filed: October 10, 2016
    Date of Patent: December 3, 2019
    Inventors: Kejun Kang, Yaohong Liu, Ziran Zhao, Wei Jia, Jianping Gu, Chuanxiang Tang, Huaibi Chen, Jianjun Gao, Wei Yin, Xiying Liu
  • Patent number: 10424588
    Abstract: A method includes providing metal gate structures in a first and a second region, respectively, of a semiconductor substrate, simultaneously cutting the metal gate structures by a two-step etching process to form a first and a second trench in metal gate structures of the first and the second region, respectively, and filling each trench with an insulating material to form a first and a second gate isolation structure. Each step of the two-step etching process employs different etching chemicals and conditions. The metal gate structures in the first region and the second region differ in gate lengths and composition of gate electrode.
    Type: Grant
    Filed: November 9, 2017
    Date of Patent: September 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Li-Wei Yin, Shu-Yuan Ku, Chun-Fai Cheng
  • Publication number: 20190262358
    Abstract: Use of 5?-androstane-3?,5,6?-triol and analogs thereof in the preparation of a drug for the prophylaxis or treatment of an altitude sickness caused by hypobaric hypoxia is provided, so as to provide a new drug for the prophylaxis or treatment of an altitude sickness. Researches revealed that 5?-androstane-3?,5,6?-triol treatment can effectively reduce vasogenic edema of brain tissue of Macaca fascicularis caused by hypobaric hypoxia, reduce the increased cerebral water content, and protect from neuronal vacuolar degeneration caused by hypobaric hypoxia, therefore it can improve neurological dysfunctions caused by hypobaric hypoxia and is useful in prophylaxis or treatment of an altitude sickness.
    Type: Application
    Filed: March 25, 2019
    Publication date: August 29, 2019
    Inventors: Wei Yin, Jiesi Chen, Guangmei Yan, Bingzheng Lu, Wenbo Zhu, Haiyan Hu, Pengxin Qiu, Yijun Huang, Jingxia Zhang