Abstract: Embodiments herein are directed to methods and devices having a stress memorization layer along a side of a substrate. In some embodiments, a method may include providing a substrate having a first main side opposite a second main side, implanting the second main side of the substrate to form an amorphous implant area, forming a stress liner over the second main side of the substrate, and annealing the stress liner to form a stress memorization layer in the amorphous implant area.

Abstract: Approaches herein decrease nanosheet gate length variations by implanting a gate layer material with ions prior to etching. A method may include forming a dummy gate structure over a nanosheet stack, the dummy gate structure including a hardmask atop a gate material layer, and removing a portion of the hardmask to expose a first area and a second area of the gate material layer. The method may further include implanting the dummy gate structure to modify the first and second areas of the gate material layer, and etching the first and second areas of the gate material layer to form a treated layer along a sidewall of a third area of the gate material layer, wherein the third area is beneath the hardmask.

Abstract: Disclosed herein are methods for reducing MOSFET trench sidewall surface roughness. In some embodiments, a method includes providing a device structure including a well formed in an epitaxial layer, forming a plurality of trenches through the well and the epitaxial layer, and implanting the device structure to form a treated layer along a sidewall of just an upper portion of the device structure within each of the plurality of trenches. The method may further include etching the device structure to remove the treated layer.

Abstract: This disclosure provides devices, methods, computer-readable medium, and means for spatial alignment transform. In some aspects, a device may perform operations including capturing a first image of a scene using a first sensor at a first zoom ratio, capturing a second image of the scene using a second sensor at a second zoom ratio, the first image having a different field-of-view (FOV) than the second image, determining a translation matrix based on one or more spatial misalignments between the first image and the second image, determining a confidence associated with the translation matrix, in response to the confidence being greater than a confidence threshold, determining a weighting factor based on the first zoom ratio, the second zoom ratio, and a current zoom ratio of the device, applying the weighting factor to the translation matrix, and warping the first image to the second image using the weighted translation matrix.

Abstract: This disclosure relates to methods and devices for routing and bearer mapping configuration in an integrated access and backhaul (IAB) network. In one implementation, the method may include detecting, by an IAB entity, a failure in transmitting a packet via an egress link of an original routing path. The method may further include selecting, by the IAB entity, a backhaul adaption protocol routing identifier of a backup routing path for the packet. The method may further include selecting, by the IAB entity, an egress backhaul radio link control channel on an egress link of the backup routing path for transmitting the packet.

Abstract: Disclosed herein are methods for reducing MOSFET trench sidewall surface roughness. In some embodiments, a method includes providing a device structure including a well formed in an epitaxial layer, forming a plurality of trenches through the well and the epitaxial layer, and implanting the device structure to form a treated layer along a sidewall of just an upper portion of the device structure within each of the plurality of trenches. The method may further include etching the device structure to remove the treated layer.

Abstract: A method of fabricating a high electron mobility transistor is disclosed. The method comprises using an ion implantation process to amorphize a portion of the barrier layer to a specific depth. The etch rate of this amorphized portion is much faster than that of the rest of the barrier layer. In this way, the depth of the recessed regions into which the source and drain contacts are disposed is more tightly controlled. Further, the etching process may be a wet or dry etch process. The roughness of the recessed region may also be improved using this approach.

Abstract: Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, and forming a mask over the device structure including within each of the plurality of trenches and over a top surface of the device structure. The method may further include removing the mask from within the trenches, wherein the mask remains along the top surface of the device structure, and implanting the device structure to form a treated layer along a bottom of the trenches. In some embodiments, the method may further include forming a gate oxide layer along a sidewall of each of the trenches and along the bottom of the trenches, wherein a thickness of the oxide along the bottom of the trenches is greater than a thickness of the oxide along the sidewall of each of the trenches.

Abstract: Disruptions in the continuity of image frames output from an image capture device due to switching from one image sensor to another image sensor of the device may be reduced or eliminated through controlled timing for switching of the image sensors according to a predefined image sensor configuration. Operation of a multi-sensor image device according to the predefined image sensor configuration may include an appropriate selection of a source for image adjustment during the zoom level transition. The predefined image sensor configuration may define transition parameters for particular zoom ranges of the image capture device.

Abstract: Approaches herein decrease nanosheet gate length variations by implanting a gate layer material with ions prior to etching. A method may include forming a dummy gate structure over a nanosheet stack, the dummy gate structure including a hardmask atop a gate material layer, and removing a portion of the hardmask to expose a first area and a second area of the gate material layer. The method may further include implanting the dummy gate structure to modify the first and second areas of the gate material layer, and etching the first and second areas of the gate material layer to form a treated layer along a sidewall of a third area of the gate material layer, wherein the third area is beneath the hardmask.

Abstract: This disclosure provides devices, methods, computer-readable medium, and means for spatial alignment transform. In some aspects, a device may perform operations including capturing a first image of a scene using a first sensor at a first zoom ratio, capturing a second image of the scene using a second sensor at a second zoom ratio, the first image having a different field-of-view (FOV) than the second image, determining a translation matrix based on one or more spatial misalignments between the first image and the second image, determining a confidence associated with the translation matrix, in response to the confidence being greater than a confidence threshold, determining a weighting factor based on the first zoom ratio, the second zoom ratio, and a current zoom ratio of the device, applying the weighting factor to the translation matrix, and warping the first image to the second image using the weighted translation matrix.

Abstract: The present invention provides therapeutic and diagnostic methods and compositions for cancer, for example, lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma. The invention provides methods of treating cancer (e.g., lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma), methods of determining whether a patient suffering from cancer (e.g., lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma) is likely to respond to treatment comprising a PD-L1 axis binding antagonist, methods of predicting responsiveness of a patient suffering from cancer (e.g., lung cancer (e.g., NSCLC), bladder cancer (e.g., UC), kidney cancer (e.g., RCC), breast cancer (e.g., TNBC), or melanoma) to treatment comprising a PD-L1 axis binding antagonist, and methods of selecting a therapy for a patient suffering from cancer (e.g.

Abstract: A method of isolating sections of the channel layer in a SOI workpiece is disclosed. Rather than etching material to create trenches, which are then filled with a dielectric material, ions are implanted into portions of the channel layer to transform these implanted regions from silicon or silicon germanium into an electrically insulating material. These ions may comprise at least one isolating species, such as oxygen, nitrogen, carbon or boron. This eliminates various processes from the fabrication sequence, including an etching process and a deposition process. Advantageously, this approach also results in greater axial strain in the channel layer, since the channel layer is continuous across the workpiece.

Abstract: A P-type field effect transistor (PFET) device and a method for fabricating a PFET device using fully depleted silicon on insulator (FDSOI) technology is disclosed. The method includes introducing germanium into the channel layer using ion implantation. This germanium implant increases the axial stress in the channel layer, improving device performance. This implant may be performed at low temperatures to minimize damage to the crystalline structure. Further, rather than using a long duration, high temperature anneal process, the germanium implanted in the channel layer may be annealed using a laser anneal or a rapid temperature anneal. The implanted regions are re-crystallized using the channel layer that is beneath the gate as the seed layer. In some embodiments, an additional oxide spacer is used to further separate the raised source and drain regions from the gate.

Abstract: Described are methods, systems and devices for eliminating redundant retransmissions in radio link layer (RLC) acknowledged mode (AM) data transmissions and receptions. In some embodiments, when an RLC service data unit (SDU) has not been completely received, the value of a state variable may be selectively set based on whether or not a contiguous set of byte segments of the RLC SDU have been received. This prevents the retransmission of byte segments that are either currently being transmitted or have not yet been transmitted. In other embodiments, the selective setting of the state variable may be triggered by the expiration of a reassembly timer. The described implementations may improve the data transmission of RLC SDUs in high data rate scenarios, which may be ubiquitous in 5G implementations.

Abstract: A method for performing an ion implantation process including providing a hardmask layer disposed atop a substrate, providing a photoresist layer disposed atop the hardmask layer and defining a pattern exposing a portion of the hardmask layer, performing a room temperature ion implantation process wherein an ion beam formed of an ionized first dopant species is directed onto the exposed portion of the hardmask layer to make the exposed portion more susceptible to ion etching or wet etching, performing an etching process wherein the exposed portion of the hardmask layer is etched away to expose an underlying portion of the substrate, and performing a high energy, hot ion implantation process wherein an ion beam formed of a ionized second dopant species is directed onto the exposed portion of the substrate.

Abstract: A serum-free complete medium for inducing differentiation of a mesenchymal stem cell to a corneal epithelial cell in the field of differentiation induction of stem cells, prepared by the following method: uniformly mixing the serum-free complete medium, containing 5-10 ?mol of resveratrol, 2-4 ?mol of icariin, 1-3 nmol of aspirin, 1-3 nmol of parathyroid hormone, 5-10 nmol of hydrocortisone, 1-3 mg of rapamycin, 2-10 ?g of testosterone, 2-10 ?g of EPO, 2-10 ?g of LIF and the balance of a corneal epithelial cell serum-free medium in per 1 L; and then performing sterilization by filtration.

Abstract: A data sharing method, server and storage medium including receiving a first part of a first key from a first client, the first key corresponding to encrypted data uploaded to a block of an information sharing system generating a first authorization code corresponding to the encrypted data; transmitting the first authorization code to the first client; based on receiving an access request from a second client for the encrypted data, obtaining a second authorization code and an incomplete key from the access request; based on the second authorization code being the same as the first authorization code and the second authorization code being valid, generating a second key according to the incomplete key and the first part of the first key corresponding to the encrypted data decrypting the encrypted data according to the second key to obtain the plaintext data; and transmitting, to the second client, the decrypted plaintext data.