Abstract: Disclosed is a semiconductor structure. The semiconductor structure includes: a multiple quantum well layer including a quantum barrier layer and a quantum well layer which are alternately arranged; and a protective layer formed on the quantum well layer, where the protective layer is made of an oxygen-doped nitride material. In the present disclosure, the presence of the oxygen-doped protective layer may achieve a longer luminous wavelengths through an InGaN quantum well material with a lower In component.

Abstract: A method for preventing a turnout conflict of a railway is applicable to a railway controller and includes: receiving a first request from a first train and a second request from a second train for using a turnout within a time period; determining whether a first distance between a current position of the first train and the turnout is equal to a second distance between a current position of the second train and the turnout; and in response to determining that the first distance is equal to the second distance, determining a priority user based on first arrival information of the first train and second arrival information of the second train, where the arrival information includes whether the train arrives at a next parking station on schedule, ahead of schedule, or behind schedule when running at a maximum running speed.

Abstract: The present disclosure provides a combined vaccine against human respiratory syncytial virus (RSV) infection and a method thereof for inducing immune response. The combined vaccine includes; a first composition including an immunologically effective dosage of a replication-deficient human adenovirus type 26 vector contains a nucleotide encoding an antigenic protein of RSV and a pharmaceutically acceptable vector; and a second composition including an immunologically effective dosage of a replication-deficient chimpanzee adenovirus type 63 vector contains a nucleotide encoding an antigenic protein of RSV and a pharmaceutically acceptable vector. The first composition is a primary immunization composition and the second composition is a booster immunization composition, or vice versa. In the present disclosure, the combined vaccine is used for inducing a protective immunity against RSV infection, and a method is provided for generating the protective immunity against RSV infection.

Abstract: The present disclosure discloses an electronic cigarette, a battery thereof is connected to an atomizing device through a first power supply circuit, the battery is connected to a first detecting device through a second power supply circuit, and first information detected by the first detecting device is used to indicate whether the electronic cigarette is in a suction state. The electronic cigarette further comprises a switching key, an on-off key, a second detecting device and an MCU, the on-off key is configured for controlling the first power supply circuit to be ON and OFF, and the second information detected by the second detecting device is used to indicate the position of the switching key; the MCU controls the second power supply circuit to be ON and OFF according to the second information.

Abstract: An epitaxial structure of a light-emitting device and a manufacturing method thereof are provided. The epitaxial structure of the light-emitting device includes a first semiconductor layer, an active region and a second semiconductor layer sequentially stacked; where the active region includes at least one group of a barrier layer and a quantum well layer which are stacked, a surface of the quantum well layer away from the first semiconductor layer has a first roughness, a surface of the barrier layer away from the first semiconductor layer has a second roughness, and the first roughness is greater than the second roughness.

Abstract: A manufacturing method for the LED structure, including: growing a first conductive-type semiconductor layer on a substrate; growing an active layer on the first conductive-type semiconductor layer, where the active layer includes a potential well layer, an insertion layer and a potential barrier layer that are stacked, the insertion layer includes a first insertion layer and a second insertion layer that are stacked, a quantum confinement Stark effect is generated between the first insertion layer and the potential well layer, the materials of the potential well layer, the first insertion layer and the potential barrier layer are all group III-V semiconductor materials, and the material of the second insertion layer includes Si—N bonds for repairing V-type defects of the first insertion layer; and growing a second conductive-type semiconductor layer on the active layer, where the first conductive-type semiconductor layer and the second conductive-type semiconductor layer have opposite conductivity types.

Abstract: According to one aspect, a vehicle includes a chassis, a propulsion system carried on the chassis and configured to propel the vehicle; a control system supported by the chassis, at least one compartment supported by the chassis, and at least one configurable divider arrangement contained within the at least one compartment. The control system is configured to enable the vehicle to operate autonomously. The at least one configurable divider arrangement is arranged to define at least a first location, wherein the at least one configurable divider arrangement includes a sensor system and a notification system, the sensor system being arranged to detect a presence of an item at the first location, the notification system being arranged to provide an indication relating to the first location.

Abstract: A multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) and a manufacturing method therefor. The multi-wavelength LED structure (1, 2, 3, 4, 5, 6, 7, 8) comprises: a first semiconductor layer (11), a stress release layer (12) having a V-shaped pit (12a), a first quantum well layer (131) and a second quantum well layer (132), which are stacked, from bottom to top, on a side wall of the V-shaped pit (12a) and a top wall of the stress release layer (12), and a second semiconductor layer (14) that is located on the second quantum well layer (132), wherein the conduction type of the second semiconductor layer (14) is the opposite of that of the first semiconductor layer (11).

Abstract: The present application provides an LED structure and a GaN-based substrate thereof, and a method for manufacturing a GaN-based substrate. The GaN-based substrate includes: a patterned base including a plurality of depressions and a plurality of protrusions; a metal Ga layer located at the plurality of depressions; and a second semiconductor layer located on the metal Ga layer and the plurality of protrusions exposed by the metal Ga layer, where a material for the second semiconductor layer is a GaN-based material. When the LED light-emitting structure is formed on the GaN-based substrate, light emitted by the LED light-emitting structure, after being reflected via the metal Ga layer, can emit from an upper surface or a side surface of the LED light-emitting structure, which reduces the light absorption and further improves the light-emitting efficiency of the LED light-emitting structure.

Abstract: The present disclosure provides a multi-exposure image fusion (MEF) method based on a feature distribution weight of a multi-exposure image, including: performing color space transformation (CST) on an image, determining a luminance distribution weight of the image, determining an exposure distribution weight of the image, determining a local gradient weight of the image, determining a final weight, and determining a fused image. The present disclosure combines the luminance distribution weight of the image, the exposure distribution weight of the image and the local gradient weight of the image to obtain the final weight, and fuses the input image and the weight with the existing pyramid-based multi-resolution fusion method to obtain the fused image, thereby solving the technical problem that an existing MEF method does not consider the overall feature distribution of the multi-exposure image.

Abstract: Disclosed are an LED structure, an LED device, and a manufacture method for the LED structure. The LED structure includes a substrate structure, and a first region and a second region are periodically provided in the substrate structure. The substrate structure includes a substrate and at least one patterned mask layer located on the substrate, the at least one patterned mask layer is located in the second region, and patterned mask layer in each second region are periodically provided. A light-emitting unit is located on the substrate structure, the light-emitting unit includes a first sub-light-emitting structure located in the first region and a second sub-light-emitting structure located in the second region, and light-emitting wavelengths of the first sub-light-emitting structure and the second sub-light-emitting structure are different. A light-emitting unit with two main light-emitting wavelengths is realized on a same substrate.

Abstract: Disclosed are an LED structure, an LED device and a manufacturing method for the LED structure. The LED structure includes a substrate structure including a substrate and a plurality of first stress modulation layers located on the substrate periodically and separately; and a light-emitting unit located on the substrate structure; wherein the substrate structure includes a first region of which upper surface is the first stress modulation layer and a second region of which upper surface is the substrate, and a light-emitting unit located on the first region and a light-emitting unit located on the second region have different light-emitting wavelengths, which realizes a light-emitting unit with two kinds of main light-emitting wavelengths on the same substrate.

Abstract: A method for controlling a vehicle, includes: acquiring current first vehicle state information of a first vehicle; determining a target vehicle distance according to the current first vehicle state information, where the target vehicle distance includes an inter-vehicle distance between the first vehicle and a second vehicle to enable synchronous control of the first vehicle and the second vehicle; determining a first target operating condition corresponding to the first vehicle according to the target vehicle distance and the current first vehicle state information; and receiving second vehicle operation information transmitted by the second vehicle, and adjusting the inter-vehicle distance to the target vehicle distance by controlling an operation of the first vehicle according to the first target operating condition and the second vehicle operation information.

Abstract: The present disclosure provides a semiconductor structure and a method for manufacturing the semiconductor structure. The semiconductor structure includes an N-type semiconductor layer provided on a substrate in a vertical direction, and at least one of multiple-quantum-well structure is formed on the N-type semiconductor layer in a horizontal direction, a P-type semiconductor layer is provided above the multiple-quantum-well structure and on at least part of sides of the multiple-quantum-well structure, each multiple-quantum-well structure includes a plurality of semiconductor layers sequentially stacked in the vertical direction and a multiple-quantum-well unit formed between each two adjacent semiconductor layers of the plurality of semiconductor layers, and the P-type semiconductor layer is in contact with each of the plurality of semiconductor layers of the multiple-quantum-well structure in the vertical direction. The method is used to manufacture the semiconductor structure.

Abstract: A method of consisting a train, includes: by a first vehicle, receiving the train consist control instruction transmitted by the train control device, where the train consist control instruction is configured to instruct the first vehicle for consisting the train; determining a second vehicle for consisting the train according to the train consist control instruction; detecting a first inter-vehicle distance between the first vehicle and the second vehicle; receiving a second inter-vehicle distance between the first vehicle and the second vehicle transmitted by the second vehicle, where the second inter-vehicle distance comprises a distance between the first vehicle and the second vehicle detected by the second vehicle; and in response to that a difference between the first inter-vehicle distance and the second inter-vehicle distance is less than or equal to a first distance threshold, controlling the first vehicle to couple to the second vehicle to consist the train.

Abstract: A multi-quantum well structure includes at least one lamination layer, each lamination layer includes a first film layer, an insertion layer and a second film layer, and the at least one lamination layer includes a plurality of lamination layers which are stacked with each other. The insertion layer is located between the first film layer and the second film layer. The insertion layer includes at least one of a monomer structure and a superlattice structure, the first film layer is doped with elements of In, Ga and N, the insertion layer is doped with elements of Al, Ga and N, and the second film layer is doped with elements of Ga and N. The multi-quantum well structure has ability to emit a light with a longer wavelength, and defects and other undesirable phenomena, caused by growing the first film layer with low-temperature epitaxy, may be prevented.

Abstract: Disclosed are a quantum well structure and a preparation method therefor, and a light-emitting diode. The quantum well structure includes at least one quantum well and at least one first film layer. The quantum well includes a well layer and a barrier layer alternately stacked, and the well layer includes a first doping element. Each first film layer includes a second doping element. The second doping element is used for adjusting a doping content of the first doping element in the well layer. The first doping element includes at least one of In and Al, and the second doping element includes at least one of Al, Mg, and Si. A content of the first doping element may be adjusted by catalysis of the second doping element, thereby adjusting light-emitting efficiency and a light wavelength of the quantum well as required.

Abstract: Disclosed are a low-temperature processing method for improving a 4H—SiC/SiO2 interface based on a supercritical oxynitride, and use thereof. The method includes: performing standard cleaning on a silicon carbide sample to be processed; performing dry-oxygen oxidation on the cleaned silicon carbide sample to grow an oxide layer; placing the silicon carbide sample having the oxide layer on a support in a steady-state supercritical chamber; controlling a pressure and injecting nitrogen-oxygen gas into the supercritical device; increasing a temperature in the supercritical device from 23° C. to 500° C.; maintaining the above supercritical state until the processing ends; reducing a temperature of a reactor to room temperature after reaction ends, reducing the pressure to an atmospheric pressure, and taking out the reactor. The present disclosure allows for effective and quick decrease in the 4H—SiC/SiO2 interface state density, and also a significant decrease in the processing temperature.

Abstract: A train control method includes: acquiring a current control level of the train and outputting the current control level to a train traction control system; acquiring current train operation data and calculating an evaluation score according to the current train operation data by the train traction control system; and inputting the current train operation data and the evaluation score into a neural network learning system to adjust the current control level of the train to obtain a final outputted control level.

Abstract: The present disclosure relates to a vehicle scheduling method, apparatus, and system.