Abstract: A semiconductor packaging method, a semiconductor assembly and an electronic device comprising the semiconductor assembly are disclosed herein. The semiconductor packaging method comprises providing at least one semiconductor device and a carrier board. A plurality of first alignment solder parts are formed on a passive surface of the semiconductor device, and a plurality of corresponding second alignment solder parts are formed on the carrier board. The method further comprises forming a plurality of alignment solder joints by aligning and soldering the first alignment solder parts to respective ones of the second alignment solder parts whereby the semiconductor device is aligned and fixed to the carrier board; encapsulating the at least one semiconductor device to form a molded package body; sequentially forming a redistribution layer and external terminals on the molded package body so that the connection terminals are connected to the external terminal through the interconnection layer.

Abstract: A method of forming a package comprises forming a stack of chip layers. Each chip layer has a front side facing away from the carrier substrate. A first chip layer includes a plurality of first chips having first chip contacts on the front side of the first chip layer and chip couplers having through vias. A second chip layer includes a plurality of second chip having second chip contacts on the front side of the second chip layer and coupled to respective ones of at least a first subset of the through vias. The method further comprises forming a redistribution layer on the front side of the first chip layer and dividing the stack of chip layers and the redistribution layer to form a plurality of chip packages. A chip package thus formed include a stack of chips and one or more chip connectors on a singulated redistribution layer.

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

Abstract: A portable temperature regulation device includes a wearing body and first and second main bodies rotatably connected to the wearing body. The first and second main bodies each include a first housing in which a first receiving chamber is formed to receive a first fan therein. The first main body further includes a first air passage in communication with the first receiving chamber, a first air outlet communicating the first air passage and outside, an air inlet in communication with the first receiving chamber. The first and second main bodies are rotatably connected to the wearing body by a rotation structure. When it needs to fold for storage, the first and second main bodies can be rotated to a folded state, so as to reduce the size of the portable temperature regulation device for easy storage by a user.

Abstract: A portable temperature regulation device includes a wearing body and first and second main bodies rotatably connected to the wearing body. The first and second main bodies each include a first housing in which a first receiving chamber is formed to receive a first fan therein. The first main body further includes a first air passage in communication with the first receiving chamber, a first air outlet communicating the first air passage and outside, an air inlet in communication with the first receiving chamber. The first and second main bodies are rotatably connected to the wearing body by a rotation structure. When it needs to fold for storage, the first and second main bodies can be rotated to a folded state, so as to reduce the size of the portable temperature regulation device for easy storage by a user.

Abstract: A portable blowing device includes a body and fans arranged in the body. Air channels are arranged in the body and extend in the length direction of the body to allow airflow to pass through. Wind shields are arranged in the air channels, and a periphery of the wind shield is closely connected with a side wall of the air channel so that a sub-air channel is formed between the wind shield and the side wall of the air channel. Air outlets are formed in the side wall for communicating with outside and the sub-air channel, and airflow generated by the fan can enter the sub-air channel and then exits the air outlets. Because of the reduced volume of the sub-air channel, the airflow is concentrated after entering the sub-air channel, and airflow exiting the air outlets is strengthened, so that the cooling effect and the user experience are improved.

Abstract: A portable blowing device includes a body and fans arranged in the body. Air channels are arranged in the body and extend in the length direction of the body to allow airflow to pass through. Wind shields are arranged in the air channels, and a periphery of the wind shield is closely connected with a side wall of the air channel so that a sub-air channel is formed between the wind shield and the side wall of the air channel. Air outlets are formed in the side wall for communicating with outside and the sub-air channel, and airflow generated by the fan can enter the sub-air channel and then exits the air outlets. Because of the reduced volume of the sub-air channel, the airflow is concentrated after entering the sub-air channel, and airflow exiting the air outlets is strengthened, so that the cooling effect and the user experience are improved.

Abstract: A portable blowing device includes a body and fans arranged in the body. Air channels are arranged in the body and extend in the length direction of the body to allow airflow to pass through. Wind shields are arranged in the air channels, and a periphery of the wind shield is closely connected with a side wall of the air channel so that a sub-air channel is formed between the wind shield and the side wall of the air channel. Air outlets are formed in the side wall for communicating with outside and the sub-air channel, and airflow generated by the fan can enter the sub-air channel and then exits the air outlets. Because of the reduced volume of the sub-air channel, the airflow is concentrated after entering the sub-air channel, and airflow exiting the air outlets is strengthened, so that the cooling effect and the user experience are improved.

Abstract: A closed-loop stepper motor control system, drive device and automation device, wherein the system comprises a microprocessor (1) compatible with EtherCAT communication protocol functions, an external interface circuit (2) connected to the said microprocessor (1) and communication interface unit (3); the said microprocessor (1) is also connected to a drive circuit (4), current testing circuit (5), as well as an encoder feedback circuit (6); the said communication interface unit (3) is mutually connected to the said microprocessor (1) through the physical layer communication circuit (31); the said microprocessor (1) is also mutually connected to the power supply circuit (7) that provides stable power supply voltage.

Abstract: A stepper motor driver with brake drive, a drive device and an automation device are disclosed. The stepper motor driver comprises a microprocessor (1) embedded with a communication protocol, an external interface unit (3) mutually connected to the microprocessor (1) and a communication interface circuit (2); the microprocessor (1) is also connected to a drive control circuit (4) and a brake device (5), and the brake device (5) is mutually connected to the external interface unit (3); the microprocessor (1) is also mutually connected to a power supply circuit (13) that provides a stable power supply voltage. The stepper motor driver has such advantages as simple structure, high capacity to resist interference, high effectiveness, low cost, and ease in maintenance.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of emitters disposed on the substrate, including at least first emitters disposed in a central zone of the array and second emitters disposed in at least one peripheral zone of the array, surrounding the central zone. The array includes at least one cathode and at least one anode disposed on opposing sides of the emitters. The first emitters have a first resistance between the at least one cathode and the at least one anode, and the second emitters have a second resistance, greater than the first resistance, between the at least one cathode and the at least one anode. A drive circuit is coupled to apply a selected voltage between the at least one cathode and the at least one anode so as to cause the emitters to emit optical radiation.

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.

Abstract: The present invention discloses a reagent set for detecting interactions between biomolecules and their regulatory factors and applications. One reagent set disclosed in the present invention consists of three reagents named A, B and C; the reagent A is formed by connecting a biomolecule R and a biomolecule X; the reagent B contains a biomolecule L; there is an interaction between the biomolecule R and the biomolecule L, and a phase transition occurs when the biomolecule R and the biomolecule L interact; the reagent C is formed by connecting a reporter group JIA with a biomolecule named XL.

Abstract: An optoelectronic device includes a semiconductor substrate. A first set of thin-film layers is disposed on the substrate and defines a lower distributed Bragg-reflector (DBR) stack. A second set of thin-film layers is disposed over the lower DBR stack and defines an optical emission region, which is contained in a mesa defined by multiple trenches, which are disposed around the optical emission region without fully surrounding the optical emission region. A third set of thin-film layers is disposed over the optical emission region and defines an upper DBR stack. Electrodes are disposed around the mesa in gaps between the trenches and are configured to apply an excitation current to the optical emission region.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A light-emitting device includes a semiconductor substrate, a surface-emitting semiconductor light source on the semiconductor substrate, a monolithic first dielectric, and a second dielectric. The monolithic first dielectric is transparent to light emitted by the light source and includes first and second micro-lenses adjacent an aperture of the light source and having axes parallel to and offset from an axis of a beam of light emitted by the light source, and a saddle-shaped lens over the aperture of the light source. The saddle-shaped lens connects the first and second micro-lenses and reshapes the beam of light emitted by the light source to have a high aspect ratio. The second dielectric is transparent to light emitted by the light source and encapsulates a light emission surface of the saddle-shaped lens. The second dielectric has a higher refractive index than the monolithic first dielectric.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: A current limiting circuit for controlling current from a power supply to a load having a capacitance includes an inductor, a transistor coupled in a current path with the inductor, and a control circuit. The transistor includes a control terminal. The control circuit is coupled to sense a voltage across the inductor and coupled to the control terminal of the transistor. The control circuit is configured to turn off the transistor when the voltage across the inductor is greater than a threshold to restrict current from a power supply, and turn on the transistor when a defined parameter is met to allow current from the power supply to charge the load capacitance. Other example current limiting circuits are also disclosed.