Abstract: There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency.

Abstract: A mobile device includes a motion detector, a processing unit, and a wireless positioning module. The motion detector is configured to detect a motion of the mobile device to obtain a motion signal. The processing unit is configured to do the followings: process the motion signal to obtain a vibration frequency and a vibration regularity of the mobile device; determine a device activity status of the mobile device according to the vibration frequency and the vibration regularity; and generate a control signal when finding that the device activity status switches from a first activity status to a second activity status. The wireless positioning module is configured to identify a first location of the mobile device in response to the control signal.

Abstract: The present disclosure relates to an integrated chip having an integrated bio-sensor having horizontal and vertical sensing surfaces. In some embodiments, the integrated chip has a sensing device disposed within a semiconductor substrate. A back-end-of the line (BEOL) metallization stack with a plurality of metal interconnect layers electrically coupled to the sensing device is arranged within an inter-level dielectric (ILD) layer overlying the semiconductor substrate. A sensing well is located within a top surface of the ILD layer. The sensing well has a horizontal sensing surface extending along a top surface of a first one of the plurality of metal interconnect layers and a vertical sensing surface extending along a sidewall of a second one of the plurality of metal interconnect layers overlying the first one of the plurality of metal interconnect layers. The use of both horizontal and vertical sensing surfaces enables more accurate sensing.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

Abstract: A signal conversion method for a display image is provided. The signal conversion method includes: receiving an image data of the (N?1)th frame; converting the (N?1)th image data to obtain a luminance data; determining a signal tuning gain of an image data of Nth frame according to the image data of the (N?1)th frame, the luminance data and a backlight duty adjusting table; adjusting an image data of Nth frame according to the signal tuning gain of Nth frame so as to generate an output image data of Nth frame; and displaying pixels according to the output image data of Nth frame.

Abstract: A device and a method for forming a device are disclosed. The device includes a substrate with a high voltage (HV) device region. The HV device region is defined with first and second device isolation regions and an internal dielectric region which are shallow trench isolation (STI) regions. A HV transistor is disposed in the HV device region. The HV transistor includes a gate dielectric layer on the substrate, a gate disposed on the gate dielectric layer, and a source region disposed in the substrate adjacent to the gate and first device isolation region while a drain region disposed in the substrate adjacent to the second device isolation region. A drift well and a body well are disposed in the substrate. At least one buried RESURF region is disposed under the internal dielectric region.

Abstract: An automatic skin type detecting electronic device and a method for skin care are provided. The method includes controlling a skin parameter detector to detect skin parameters of skin of a user, and obtaining the skin parameters detected by the skin parameter detector. According to the obtained skin parameters, a skin type is determined. According to the determined skin type and a pre-stored relation list which defines a relationship between multiple skin types and multiple vibration modes for a vibration motor, a vibration mode is determined. The vibration motor is controlled to work in the determined vibration mode to vibrate on the skin of the user.

Abstract: Methods for manufacturing a FinFET and a FinFET are provided. In various embodiments, the method for manufacturing a FinFET includes etching a base substrate to form a trapezoidal fin structure. Next, an isolation layer is deposited covering the etched base substrate. Then, the trapezoidal fin structure is exposed. The trapezoidal fin structure includes a top surface and a bottom surface, and the top surface has a width larger than that of the bottom surface.

Abstract: A backlight module includes a back board, an illumination assembly, a supporting component and a frame. The illumination assembly is disposed on the back board. The supporting component includes a base, a first extending plate and a second extending plate. The base is disposed on the back board. Both of the first extending plate and the second extending plate stand on the base and extend along an axial direction of the base so that the first extending plate and the second extending plate are at a first angle and a second angle relative to the base, respectively. The first extending plate is located between the second extending plate and the illumination assembly. The frame is disposed on the supporting component, and the illumination assembly is located between the frame and the back board.

Abstract: Some embodiments relate to a method of manufacturing an integrated circuit device. In this method a dielectric layer is formed over a substrate. The dielectric layer comprises an opening arranged within the dielectric layer. A first cobalt liner is formed along bottom and sidewall surfaces of the opening. A barrier liner is formed on exposed surfaces of the first cobalt liner. A bulk cobalt layer is formed in the opening and over the barrier liner to fill a remaining space of the opening.

Abstract: A method embodiment includes providing a MEMS wafer. A portion of the MEMS wafer is patterned to provide a first membrane for a microphone device and a second membrane for a pressure sensor device. A carrier wafer is bonded to the MEMS wafer. The carrier wafer is etched to expose the first membrane and a first surface of the second membrane to an ambient environment. A MEMS structure is formed in the MEMS wafer. A cap wafer is bonded to a side of the MEMS wafer opposing the carrier wafer to form a first sealed cavity including the MEMS structure and a second sealed cavity including a second surface of the second membrane for the pressure sensor device. The cap wafer comprises an interconnect structure. A through-via electrically connected to the interconnect structure is formed in the cap wafer.

Abstract: A method of forming a semiconductor device includes bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches. Each isolation trench of the plurality of isolation trenches is substantially aligned with a corresponding trench region of one of the first chip package portion, the second chip package portion or the third chip package portion. The method also includes removing a portion of the capping wafer to expose a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package into a first chip package configured to perform a first operation, a second chip package configured to perform a second operation, and a third chip package configured to perform a third operation.

Abstract: A vectorial optical field generator includes a radiation source a modulator surface, a first quarter wave plate, a second quarter wave plate, and an output plane. The radiation source emits an input radiation along a path and the modulator surface is positioned along the path and configured to modulate a phase, an amplitude, a polarization ratio, and a retardation of the input radiation along a fourth area of the modulator surface. The output plane is positioned along the path and receives output radiation resulting from modulating the input radiation with the modulator surface, the first quarter wave plate, and the second quarter wave plate.

Abstract: A water curtain simulated candle lamp, which is mainly provided to achieve the dynamic effect of simulating candle burning by using water curtain projection, including a base body, a cover body, a spraying device, a light source and a floating wick. Wherein, a water container with an upper opening is set on the base body, the cover body including a concave upper surface is used to cover the water container, and a spacing hole is set on its concave end; the spraying device set inside the water container includes a pump and a spray pipe, which is used to spray a water curtain simulating flame shape from the spacing hole; the light source is used to light up the sprayed water curtain, the floating wick set inside the spray pipe is provided to move up and down with water flow to form a wick of simulating candle lamp.

Abstract: An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor device includes a substrate having a gate structure formed thereupon. The gate structure includes a gate dielectric layer disposed on the substrate, a growth control material disposed on a side surface of the gate structure, and a gate electrode fill material disposed on the growth control material. The gate electrode fill material is also disposed on a bottom surface of the gate structure that is free of the growth control material. In some such embodiments, the gate electrode fill material contacts a first surface and a second surface that are different in composition.

Abstract: A gas sensor includes a substrate, a heater, a dielectric layer, a sensing electrode, and a gas sensitive film. The substrate has a sensing region and a peripheral region surrounding the sensing region, and the substrate further has an opening disposed in the sensing region. The heater is disposed at least above the opening, and the heater has an electrical resistivity larger than about 6×10?8 ohm-m. The dielectric layer is disposed on the heater. The sensing electrode is disposed on the dielectric layer. The gas sensitive film is disposed on the sensing electrode.

Abstract: Some embodiments relate to a manufacturing process that combines a MEMS capacitor of a microelectromechanical systems (MEMS) microphone and an integrated circuit (IC) onto a single substrate. A dielectric is formed over a device substrate. A conductive diaphragm and a conductive backplate are formed within the dielectric, with a sacrificial portion of the dielectric between them. A first recess is formed, which extends through the dielectric to an upper surface of the conductive diaphragm. A second recess is formed, which extends through the substrate and dielectric to a lower surface of the conductive backplate. The sacrificial layer is removed to create an air gap between the conductive diaphragm and the conductive backplate. The air gap joins the first and second recesses to form a cavity that extends continuously through the dielectric and the substrate. The present disclosure is also directed to the semiconductor structure of the MEMS microphone resulting from the manufacturing process.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: A method for controlling a display is provided. An RGB video signal is transformed into an RGBW video signal based on a human factor. The display has a plurality of pixels configured to display images according to the RGBW video signal, where each of the pixels has a red subpixel, a green subpixel, a blue subpixel and a white subpixel. According to the method, when brightness of a backlight module of the display is reduced to decrease energy consumption of the display, quality of the images of the display observed by users is still maintained within an acceptable range.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.