Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.

Abstract: A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.

Abstract: A method for allocating port assignments for transmitting a reserved network stream across a network node comprises determining a cycle time associated with a network node. The method also comprises establishing, for at least one port of the network node, a plurality of virtual layers associated with the cycle time, wherein each of the plurality of virtual layers is divided into 2n equally-spaced slots per cycle (where n>0). The method further comprises receiving a reserved stream request associated with transmission of a reserved stream across the node, and determining a number of slots required to transmit the reserved stream. The method also comprises assigning one or more slots associated with a port of the network node to the transmission of packets associated with the reserved stream based on the determined number of slots. The method further comprises transmitting the stream according to the slot assignment associated with the port of the network node.

Abstract: A method of radio bearer transmission in dual connectivity for a network in a long term evolution (LTE) system is disclosed. The method comprises generating at least a packet data convergence protocol protocol data unit (PDCP PDU) by a PDCP entity of the network corresponding to a radio bearer (RB), and assigning each PDCP PDU with an identity, wherein the identity indicates which PDCP entity the PDCP PDU belongs to.

Abstract: An antenna device for a signal having a frequency within an operation band comprises a ground element, a radiating element short-circuited to the ground element, a positive feed connected to the radiating element, and a ground feed coupled to the ground element by a capacitive element. The capacitive element is a substantially open circuit for signals having a frequency lower than the operation band. The capacitive element is a substantially short circuit for signals having a frequency within or higher than the operation band.

Abstract: A polyester polymer and a method for manufacturing the same are revealed. Sulfonate groups (—SO3) are used for modification of polyethylene terephthalate (PET) and chemical extrusion technique is used in modification processes. The physiochemical properties of PET sulfonate obtained including moisture absorption, secondary transition temperature, melting point etc. are improved significantly. Thus the dyeing process can be carried out at lower temperature and the dyeing depth is improved. The purpose of energy saving and reduced carbon dioxide emission are further achieved.

Abstract: A three-dimensional (3D) integrated circuit (IC) includes a first IC and a second IC. The first IC includes a MEMS device and a first bonding structure. The second IC includes a second bonding structure. The first and second bonding structures are bonded together to couple the first IC to the second IC. A conformal barrier layer is disposed over a surface of the second IC nearest the first IC. An etch isolation structure is arranged beneath the surface of the second IC and encloses a sacrificial region which is arranged on either side of the second bonding structure and which is arranged in the second IC.

Abstract: A method for fabricating a MEMS device includes providing a micro-electro-mechanical system (MEMS) substrate having a sacrificial layer on a first side, providing a carrier including a plurality of cavities, bonding the first side of the MEMS substrate on the carrier, forming a first bonding material layer on a second side of the MEMS substrate, applying a sacrificial layer removal process to the MEMS substrate, providing a semiconductor substrate including a second bonding material layer and bonding the semiconductor substrate on the second side of the MEMS substrate.

Abstract: The present disclosure relates to an integrated microsystem with a protection barrier structure, and an associated method. In some embodiments, the integrated microsystem comprises a first die having a plurality of CMOS devices disposed thereon, a second die having a plurality of MEMS devices disposed thereon and a vapor hydrofluoric acid (vHF) etch barrier structure disposed between the first die and the second die. The second die is bonded to the first die at a bond interface region. The vHF etch barrier structure comprises a vHF barrier layer over an upper surface of the first die, and a stress reduction layer arranged between the vHF etch barrier layer and the upper surface of the first die.

Abstract: A mobile device includes a motion detector, a processing unit, and a wireless positioning module. The motion detector is configured to detect a motion of the mobile device to obtain a motion signal. The processing unit is configured to do the followings: process the motion signal to obtain a vibration frequency and a vibration regularity of the mobile device; determine a device activity status of the mobile device according to the vibration frequency and the vibration regularity; and generate a control signal when finding that the device activity status switches from a first activity status to a second activity status. The wireless positioning module is configured to identify a first location of the mobile device in response to the control signal.

Abstract: A manufacturing method of a thin film transistor includes the following steps. A substrate is provided first. A semiconductor layer is then formed on the substrate. Next, a photoresist pattern including a middle portion and two peripheral portions is formed on the semiconductor layer. The middle portion is disposed between two peripheral portions, and the thickness of the middle portion is greater than each of the peripheral portions. Next, an etching process is performed on the semiconductor layer for forming a patterned semiconductor layer. A photoresist ashing process is then performed to remove at least the peripheral portions of the photoresist pattern to form a channel defining photoresist pattern and expose two portions of the patterned semiconductor layer. Next, the patterned semiconductor layer is treated to form a semiconductor portion and two conductor portions. The channel defining photoresist pattern is then removed.

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The bonded substrate comprises a first cavity corresponding to a first MEMS device having a first pressure and a second cavity corresponding to a second MEMS device having a different second pressure. The second cavity comprises a major volume and a vent hole connected by a lateral channel disposed between the device substrate and the cap substrate and the vent hole is hermetically sealed by a sealing structure.

Abstract: Some embodiments relate to a manufacturing process that combines a MEMS capacitor of a microelectromechanical systems (MEMS) microphone and an integrated circuit (IC) onto a single substrate. A dielectric is formed over a device substrate. A conductive diaphragm and a conductive backplate are formed within the dielectric, with a sacrificial portion of the dielectric between them. A first recess is formed, which extends through the dielectric to an upper surface of the conductive diaphragm. A second recess is formed, which extends through the substrate and dielectric to a lower surface of the conductive backplate. The sacrificial layer is removed to create an air gap between the conductive diaphragm and the conductive backplate. The air gap joins the first and second recesses to form a cavity that extends continuously through the dielectric and the substrate. The present disclosure is also directed to the semiconductor structure of the MEMS microphone resulting from the manufacturing process.

Abstract: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.

Abstract: The disclosure is directed to a method of radio resource scheduling in an unlicensed spectrum and related apparatuses using the same method. In one of the exemplary embodiments, the method would include not limited to transmitting a node control information which may include an occupancy pattern of a radio resource of the unlicensed spectrum before receiving an occupancy notification; transmitting an equipment control information which comprises the occupancy pattern of the radio resource of the unlicensed spectrum before receiving the occupancy notification; transmitting a packet data by using the radio resource of the unlicensed spectrum before receiving the occupancy notification; and receiving the occupancy notification which informs an availability of the radio resource of the unlicensed spectrum.

Abstract: In an example embodiment, there is disclosed an apparatus comprising a plurality of ports and routing logic coupled with the plurality of ports. The routing logic obtains data representative of a first port configuration for the plurality of ports, the first port configuration comprises data representative of a status for individual ports selected from the plurality of ports, the status indicating whether an individual port selected from the plurality of ports is an open port, an alternate port, or a failed port. The routing logic forwards data in accordance with the first port configuration. The routing logic also obtains data representative of an alternate port configuration for the plurality of ports, the alternate port configuration is to be employed upon determining a predefined link has failed. The alternate configuration comprising a new status for individual ports selected from the plurality of ports.

Abstract: A packaging method for light emitting diodes and structure thereof are provided, more particularly, provided are packaging method and structure thereof, which innovates packaging processes in fabrication distinct from and even contrary to those of conventional technologies, and obviate required Gold Wire Bonding Processes traditionally.

Abstract: A semiconductor structure for a microelectromechanical systems (MEMS) device is provided. A first substrate region includes an electrical isolation layer arranged over a top surface of the first substrate region. A second substrate region is arranged over the electrical isolation layer and includes a MEMS device structure arranged within the second substrate region. The MEMS device structure includes a fixed mass and a proof mass. A dielectric region is arranged over the electrical isolation layer around the fixed mass. A fixed mass electrode is arranged around the dielectric region, and extends through the second substrate region to the electrical isolation layer. An isolated electrode extends through the second substrate region and the electrical isolation layer to the first substrate region on an opposite side of the proof mass as the fixed mass electrode. The method of forming the semiconductor structure is also provided.

Abstract: A method for packaging a microelectromechanical system (MEMS) device with an integrated circuit die using through mold vias (TMVs) is provided. According to the method, a MEMS substrate having a MEMS device is provided. A cap substrate is secured to a top surface of the MEMS substrate. The cap substrate includes a recess corresponding to the MEMS device in a bottom surface of the cap substrate. An integrated circuit die is secured to a top surface of the cap substrate over the recess. A housing covering the MEMS substrate, the cap substrate, and the integrated circuit die is formed. A through mold via (TMV) electrically coupled with the integrated circuit die and extending between a top surface of the housing and the integrated circuit die is formed. The structure resulting from application of the method is also provided.

Abstract: A getter is provided. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A MEMS device is provided. The MEMS device includes a substrate and a getter over the substrate. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; and providing a getter over the substrate, wherein the getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum, and wherein all of the percentages are atomic percentages.