Abstract: One embodiment of the present invention sets forth an integrated circuit that includes multiple input/output (I/O) pad groups. Each I/O pad group includes an on-chip star network, multiple I/O pads, multiple test multiplexers, a digital-to-analog converter (DAC), and a wide-range comparator. Each test multiplexer is configured to couple a different I/O pad to the on-chip star network. The DAC is configured to supply at least one of a source current, a sink current, and a first reference voltage to the on-chip star network. The wide-range comparator is configured to compare a voltage present on a first I/O pad included in the plurality of I/O pads with a second reference voltage. Advantageously, IO leakage and DC parametric testing may be performed on integrated circuits with high I/O pad counts using an ATE system with a significantly lower quantity of ATE test channels relative to prior approaches.

Abstract: A method for performing a programming operation to a first memory bit and a second memory bit of a device is described. The method includes applying a pulse train voltage to a metal gate of the device and grounding a substrate of the device. By floating/grounding a drain of the device and/or by floating/grounding the source of the device, the first memory and the second memory bit are programmed. The pulse train voltage includes 10 to 1000 pulses. One pulse includes a peak voltage and a base voltage. The peak voltage ranges from 0.5 V to 10 V. A duration of the peak voltage ranges from 1 nanosecond to 1 millisecond. The base voltage is 0 V. A duration of the base voltage ranges from 1 nanosecond to 1 millisecond.

Abstract: A method for performing a programming operation to a first memory bit and a second memory bit of a device is described. The method includes applying a pulse train voltage to a metal gate of the device and grounding a substrate of the device. By floating/grounding a drain of the device and/or by floating/grounding the source of the device, the first memory and the second memory bit are programmed. The pulse train voltage includes 10 to 1000 pulses. One pulse includes a peak voltage and a base voltage. The peak voltage ranges from 0.5 V to 10 V. A duration of the peak voltage ranges from 1 nanosecond to 1 millisecond. The base voltage is 0 V. A duration of the base voltage ranges from 1 nanosecond to 1 millisecond.

Abstract: An electronic apparatus and an operation method thereof are provided. The electronic apparatus has a sensor module. A space operation mode is enabled when an operation object is detected in a sensor space by the sensor module. A controlling function corresponding to one of a plurality of using spaces divided from the sensor space in which the operation object is located is enabled. Movement information of the operation object is detected by the sensor module, and an operation action corresponding to the enabled controlling function is executed.