Patents by Inventor Wen-Rui Chen

Wen-Rui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same
    Patent number: 6469319
    Abstract: An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semiconductor device comprises the steps of forming a II-VI compound semiconductor layer on the substrate, forming a mask layer with a contact via on the II-VI compound semiconductor layer, forming a metal-contact layer on the mask layer and II-VI compound semiconductor layer, and removing the metal-contact layer over the mask layer, wherein the remainder of the metal-contact layer forms the ohmic contact. In order to prevent oxidization of the metal-contact layer, a shield layer comprised of a noble metal can be disposed on the metal-contact layer.
    Type: Grant
    Filed: March 21, 2000
    Date of Patent: October 22, 2002
    Assignee: National Science Council
    Inventors: Yan-Kuin Su, Shoou-Jinn Chang, Wen-Rui Chen