Abstract: The present invention pertains to a system for processing semiconductor wafers. The processing may involve the removal of material from the wafers or deposition of material on the wafers. Various aspects of the invention include specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism can convert a liquid-state sub-critical solution to a supercritical processing solution and introduce it into a process vessel that contains a batch of wafers. The wafers may be rotated within the supercritical processing solution. The supercritical processing solution is preferably recirculated through the process vessel by a recirculation system. When chemical additives are added to a supercritical solvent, the momentum of the chemical additives are preferably matched to the momentum of the supercritical solvent. Additives may be added at a higher initial flow rate, then ramped down a lower flow rate, e.g.

Abstract: An automated deposition system includes a template deposition chamber that is used to deposit a mesostructured template on a wafer or other substrate, such as an optical lens. A supercritical infusion chamber infuses the mesoporous template with a matrix-forming material that is cured to produce a mesoporous matrix. The template may be removed by thermal, chemical or plasma processing to leave the mesoporous matrix intact.

Abstract: A plasma-enhanced chemical vapor deposition system includes a number of process gas injection tubes and at least one dedicated clean gas injection tube. A plasma is used to periodically clean the interior surfaces of the deposition chamber. The cleaning is made more rapid and effective by introducing the clean gas through the dedicated clean gas injection tube. In this manner the clean gas can be introduced at a relatively high flow rate without detracting from the cleaning of the interior surfaces of the process gas injection tubes. As a separate aspect of this invention, a high-frequency signal is applied to both terminals of the coil during the cleaning process. This produces a plasma, mainly by capacitive coupling, which has a shape and uniformity that are well-suited to cleaning the surfaces of the deposition chamber.

Abstract: In a chemical vapor deposition process a surface layer is formed on an antireflective layer to prevent amines in the antireflective layer from neutralizing acid components formed during the exposure of an overlying photoresist layer. The surface layer is formed by introducing an oxygen-containing gas such as N.sub.2 O into the CVD chamber in the presence of radio frequency power, after the antireflective layer has been formed.