Abstract: A thin-film solar cell arrangement is provided. The thin-film solar cell contains at least two pin (nip) solar cells that are arranged relative to one another as a tandem cell, the neighboring layers of the two solar cells being of the same conductivity type. The two solar cells are interconnected to one another in a parallel circuit. The thin-film solar cell arrangement is suitable for module structure comprising series interconnection, whereby the parallel circuit of the respectively two solar cells in the tandem cell ensues together with the series interconnection.

Abstract: A method for avoiding shorts between two separated layer electrodes in a layered electrical component, such as a solar cell having amorphous silicon layers, includes the steps of generating a first electrode layer on a substrate, generating an intermediate non-electrode layer, which may possibly have voids therein, over the first electrode, and generating a photo-resist layer on the intermediate layer which fills any voids which may exist in the intermediate layer. The substrate and the first electrode layer are transmissive for selected radiation, and the intermediate layer is non-transmissive for the selected radiation. The photo-resist is exposed in the voids by irradiation with the selected radiation through the substrate and the first electrode layer, so that the exposed photo-resist in the voids has a different solubility than the unexposed remainder of the photo-resist.

Abstract: A thin-film circuit which includes temperature-compensated RC elements consisting of an AlTa alloy layer having approximately 3-17 at % tantalum in aluminum, which is sputtered or vapor deposited onto a non-conductive substrate, is produced by a process in which the AlTa alloy layer is deposited in an operative, reactive gas mixture, containing at least one of the gases O.sub.2, CO.sub.2, and N.sub.2 and the TC.sub.R value is established by the tantalum component of the alloy layer and/or partial pressure of the reactive gas, and the TC.sub.C value of the capacitors formed from the AlTa alloy layer is established by tempering to be at least approximately oppositely equal to the TC.sub.R value.