Patents by Inventor William A. Barletta

William A. Barletta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240082802
    Abstract: A fluid catalytic cracking unit fractionator comprising a fractionator column having a slurry pumparound section and a bottom liquid section. The slurry pumparound section comprises an upper bed and a lower bed each disposed in the fractionator column. The slurry pumparound section further comprises an upper liquid distributor (such as a spray header comprising a plurality of upper nozzles) disposed above the upper bed and configured to distribute liquid from the bottom liquid section onto the upper bed. The slurry pumparound section also comprises a lower liquid distributor (such as a spray header comprising a plurality of lower nozzles) disposed below the upper bed and above the lower bed and configured to distribute liquid from the bottom liquid section onto the lower bed.
    Type: Application
    Filed: September 14, 2022
    Publication date: March 14, 2024
    Inventors: Anthony Frederick BARLETTA, JR., Scott William GOLDEN, Edward Lee HARTMAN, Steven Leslie WHITE
  • Patent number: 11925929
    Abstract: A fluid catalytic cracking unit fractionator comprising a fractionator column having a slurry pumparound section and a bottom liquid section. The slurry pumparound section comprises an upper bed and a lower bed each disposed in the fractionator column. The slurry pumparound section further comprises an upper liquid distributor (such as a spray header comprising a plurality of upper nozzles) disposed above the upper bed and configured to distribute liquid from the bottom liquid section onto the upper bed. The slurry pumparound section also comprises a lower liquid distributor (such as a spray header comprising a plurality of lower nozzles) disposed below the upper bed and above the lower bed and configured to distribute liquid from the bottom liquid section onto the lower bed.
    Type: Grant
    Filed: September 14, 2022
    Date of Patent: March 12, 2024
    Assignee: PROCESS CONSULTING SERVICES, INC.
    Inventors: Anthony Frederick Barletta, Jr., Scott William Golden, Edward Lee Hartman, Steven Leslie White
  • Patent number: 8279993
    Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: October 2, 2012
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, Tak Pui Lou, William A. Barletta
  • Publication number: 20100172458
    Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.
    Type: Application
    Filed: August 14, 2009
    Publication date: July 8, 2010
    Applicant: REGENTS OF THE UNIVERSITY OF CALIFORNIA
    Inventors: Ka-Ngo Leung, Tak-Pui Lou, William A. Barletta
  • Patent number: 7609815
    Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 ?m, with inter-aperture spacings of 12 ?m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.
    Type: Grant
    Filed: June 1, 2007
    Date of Patent: October 27, 2009
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, Qing Ji, William A. Barletta, Ximan Jiang, Lili Ji
  • Patent number: 7596197
    Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.
    Type: Grant
    Filed: August 7, 2006
    Date of Patent: September 29, 2009
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, Tak Pui Lou, William A. Barletta
  • Publication number: 20090230314
    Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.
    Type: Application
    Filed: August 7, 2006
    Publication date: September 17, 2009
    Inventors: Ka-Ngo Leung, Tak Pui Lou, William A. Barletta
  • Publication number: 20080049888
    Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 ?m, with inter-aperture spacings of 12 ?m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.
    Type: Application
    Filed: June 1, 2007
    Publication date: February 28, 2008
    Inventors: Ka-Ngo Leung, Qing Ji, William Barletta, Ximan Jiang, Lili Ji
  • Patent number: 6985553
    Abstract: An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 ?s or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: January 10, 2006
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, William A. Barletta, Joe W. Kwan
  • Patent number: 6888146
    Abstract: A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.
    Type: Grant
    Filed: April 9, 1999
    Date of Patent: May 3, 2005
    Assignee: The Regents of the University of California
    Inventors: Ka-Ngo Leung, William A. Barletta, David O. Patterson, Richard A. Gough
  • Publication number: 20040146133
    Abstract: An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 &mgr;s or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.
    Type: Application
    Filed: January 24, 2003
    Publication date: July 29, 2004
    Inventors: Ka-Ngo Leung, William A. Barletta, Joe W. Kwan
  • Publication number: 20040051053
    Abstract: A maskless micro-ion-beam reduction lithography (MMRL) system generates patterns of beamlets by switching individual beamlets on or off using a universal pattern generator which is positioned as the extraction electrode of the plasma source. Each aperture of the pattern generator is independently controlled to pass a beamlet. A multiplex addressing system to the individual apertures of the MMRL system is used to reduce the number of electrical connections. An additional layer of control electrodes is added. All apertures in each row of a first layer are connected to a single row address line. All apertures in each column of a second layer are connected to a single column address line. By using the combination of row and column lines, each aperture can be controlled.
    Type: Application
    Filed: May 22, 2003
    Publication date: March 18, 2004
    Inventors: William A. Barletta, Ka-Ngo Leung