Patents by Inventor William A. Barletta
William A. Barletta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240082802Abstract: A fluid catalytic cracking unit fractionator comprising a fractionator column having a slurry pumparound section and a bottom liquid section. The slurry pumparound section comprises an upper bed and a lower bed each disposed in the fractionator column. The slurry pumparound section further comprises an upper liquid distributor (such as a spray header comprising a plurality of upper nozzles) disposed above the upper bed and configured to distribute liquid from the bottom liquid section onto the upper bed. The slurry pumparound section also comprises a lower liquid distributor (such as a spray header comprising a plurality of lower nozzles) disposed below the upper bed and above the lower bed and configured to distribute liquid from the bottom liquid section onto the lower bed.Type: ApplicationFiled: September 14, 2022Publication date: March 14, 2024Inventors: Anthony Frederick BARLETTA, JR., Scott William GOLDEN, Edward Lee HARTMAN, Steven Leslie WHITE
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Patent number: 11925929Abstract: A fluid catalytic cracking unit fractionator comprising a fractionator column having a slurry pumparound section and a bottom liquid section. The slurry pumparound section comprises an upper bed and a lower bed each disposed in the fractionator column. The slurry pumparound section further comprises an upper liquid distributor (such as a spray header comprising a plurality of upper nozzles) disposed above the upper bed and configured to distribute liquid from the bottom liquid section onto the upper bed. The slurry pumparound section also comprises a lower liquid distributor (such as a spray header comprising a plurality of lower nozzles) disposed below the upper bed and above the lower bed and configured to distribute liquid from the bottom liquid section onto the lower bed.Type: GrantFiled: September 14, 2022Date of Patent: March 12, 2024Assignee: PROCESS CONSULTING SERVICES, INC.Inventors: Anthony Frederick Barletta, Jr., Scott William Golden, Edward Lee Hartman, Steven Leslie White
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Patent number: 8279993Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.Type: GrantFiled: August 14, 2009Date of Patent: October 2, 2012Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Tak Pui Lou, William A. Barletta
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Publication number: 20100172458Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.Type: ApplicationFiled: August 14, 2009Publication date: July 8, 2010Applicant: REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Ka-Ngo Leung, Tak-Pui Lou, William A. Barletta
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Patent number: 7609815Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 ?m, with inter-aperture spacings of 12 ?m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.Type: GrantFiled: June 1, 2007Date of Patent: October 27, 2009Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Qing Ji, William A. Barletta, Ximan Jiang, Lili Ji
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Patent number: 7596197Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.Type: GrantFiled: August 7, 2006Date of Patent: September 29, 2009Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Tak Pui Lou, William A. Barletta
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Publication number: 20090230314Abstract: A cylindrical gamma generator includes a coaxial RF-driven plasma ion source and target. A hydrogen plasma is produced by RF excitation in a cylindrical plasma ion generator using an RF antenna. A cylindrical gamma generating target is coaxial with the ion generator, separated by plasma and extraction electrodes which has many openings. The plasma generator emanates ions radially over 360° and the cylindrical target is thus irradiated by ions over its entire circumference. The plasma generator and target may be as long as desired.Type: ApplicationFiled: August 7, 2006Publication date: September 17, 2009Inventors: Ka-Ngo Leung, Tak Pui Lou, William A. Barletta
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Publication number: 20080049888Abstract: Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 ?m, with inter-aperture spacings of 12 ?m. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.Type: ApplicationFiled: June 1, 2007Publication date: February 28, 2008Inventors: Ka-Ngo Leung, Qing Ji, William Barletta, Ximan Jiang, Lili Ji
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Patent number: 6985553Abstract: An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 ?s or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.Type: GrantFiled: January 23, 2003Date of Patent: January 10, 2006Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, William A. Barletta, Joe W. Kwan
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Patent number: 6888146Abstract: A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.Type: GrantFiled: April 9, 1999Date of Patent: May 3, 2005Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, William A. Barletta, David O. Patterson, Richard A. Gough
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Publication number: 20040146133Abstract: An ion source has an extraction system configured to produce ultra-short ion pulses, i.e. pulses with pulse width of about 1 &mgr;s or less, and a neutron source based on the ion source produces correspondingly ultra-short neutron pulses. To form a neutron source, a neutron generating target is positioned to receive an accelerated extracted ion beam from the ion source. To produce the ultra-short ion or neutron pulses, the apertures in the extraction system of the ion source are suitably sized to prevent ion leakage, the electrodes are suitably spaced, and the extraction voltage is controlled. The ion beam current leaving the source is regulated by applying ultra-short voltage pulses of a suitable voltage on the extraction electrode.Type: ApplicationFiled: January 24, 2003Publication date: July 29, 2004Inventors: Ka-Ngo Leung, William A. Barletta, Joe W. Kwan
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Publication number: 20040051053Abstract: A maskless micro-ion-beam reduction lithography (MMRL) system generates patterns of beamlets by switching individual beamlets on or off using a universal pattern generator which is positioned as the extraction electrode of the plasma source. Each aperture of the pattern generator is independently controlled to pass a beamlet. A multiplex addressing system to the individual apertures of the MMRL system is used to reduce the number of electrical connections. An additional layer of control electrodes is added. All apertures in each row of a first layer are connected to a single row address line. All apertures in each column of a second layer are connected to a single column address line. By using the combination of row and column lines, each aperture can be controlled.Type: ApplicationFiled: May 22, 2003Publication date: March 18, 2004Inventors: William A. Barletta, Ka-Ngo Leung