Patents by Inventor William A. Wojtczak

William A. Wojtczak has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6599870
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: June 25, 2002
    Date of Patent: July 29, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6566315
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: December 5, 2001
    Date of Patent: May 20, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Dave Bernhard, Long Nguyen
  • Publication number: 20030079416
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Application
    Filed: August 17, 2001
    Publication date: May 1, 2003
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Publication number: 20030078173
    Abstract: A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.140% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: October 23, 2001
    Publication date: April 24, 2003
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Publication number: 20030073386
    Abstract: A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
    Type: Application
    Filed: August 14, 2001
    Publication date: April 17, 2003
    Inventors: Ying Ma, William Wojtczak, Cary Regulski, Thomas H. Baum, David D. Bernhard, Deepak Verma
  • Patent number: 6527819
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: December 18, 2001
    Date of Patent: March 4, 2003
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20030040447
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Application
    Filed: June 25, 2002
    Publication date: February 27, 2003
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Patent number: 6492310
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid  2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional)  0-5% Chelating agent (optional)  0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
    Type: Grant
    Filed: March 7, 2001
    Date of Patent: December 10, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen
  • Publication number: 20020132744
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.1-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: December 5, 2001
    Publication date: September 19, 2002
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Dave Bernhard, Long Nguyen
  • Publication number: 20020124474
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: December 18, 2001
    Publication date: September 12, 2002
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20020081865
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Application
    Filed: December 18, 2001
    Publication date: June 27, 2002
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Patent number: 6409781
    Abstract: A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
    Type: Grant
    Filed: May 1, 2000
    Date of Patent: June 25, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Thomas H. Baum, Long Nguyen, Cary Regulski
  • Publication number: 20020068685
    Abstract: A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic compound residue from a semiconductor wafer. Preferably, the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid; and the polar solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), Cyclohexylpyrrolidone (CHP), Sulfolane, 1,4-Butanediol, and Butyl carbitol.
    Type: Application
    Filed: September 17, 2001
    Publication date: June 6, 2002
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, Thomas J. Kloffenstein, Daniel N. Fine, Stephen Q. Fine
  • Publication number: 20020065204
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: November 15, 2001
    Publication date: May 30, 2002
    Inventors: William A. Wojtczak, David Bernhard, Long Nguyen
  • Patent number: 6383410
    Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: May 7, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Long Nguyen, Stephen A. Fine
  • Publication number: 20020043644
    Abstract: The formulations of the present invention etch doped silicon oxide compounds, such as BPSG and PSG layers, at rates greater than or equal to the etch rate of undoped silicon oxide such as thermal oxide. The formulations have the general composition of a chelating agent, preferably weakly to moderately acidic (0.1-10%; preferably 0.2-2.8%); a fluoride salt, which may be ammonium fluoride or an organic derivative of either ammonium fluoride or a polyammonium fluoride (1.65-7%; preferably 2.25-7%); a glycol solvent (71-98%; preferably 90-98%); and optionally, an amine.
    Type: Application
    Filed: August 8, 2001
    Publication date: April 18, 2002
    Inventors: William A. Wojtczak, Long Nguyen, Stephen A. Fine
  • Patent number: 6344432
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Grant
    Filed: December 8, 2000
    Date of Patent: February 5, 2002
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Publication number: 20020013238
    Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: December 8, 2000
    Publication date: January 31, 2002
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Publication number: 20010050350
    Abstract: A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
    Type: Application
    Filed: March 27, 2001
    Publication date: December 13, 2001
    Applicant: Advanced Technology Materials Inc.
    Inventors: William A. Wojtczak, Ma. Fatima Seijo, David Bernhard, Long Nguyen
  • Patent number: 6306807
    Abstract: The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing.
    Type: Grant
    Filed: May 17, 1999
    Date of Patent: October 23, 2001
    Assignee: Advanced Technology Materials, Inc.
    Inventors: William A. Wojtczak, George Guan, Long Nguyen