Abstract: An electronically controlled burner management system for oilfield separators. The system includes an autonomous standing pilot spark ignition that includes a self-aligning clamp that holds the igniter to the burner nozzle. The self-aligning clamp enables rapid installation and removal, lowering the total cost of ownership. The autonomous spark ignition system incorporates temperature sensors to determine when the standing pilot needs to be relit, and can shut off the gas or other fuel flow to the standing pilot and the main burner when the pilot is not lit. The system increases oil and gas production from the well, reduces fugitive emissions of unburned gas, and improves oilfield worker safety. When installed or retrofitted into an existing oilfield separator, the original burner control components are left in place, allowing the user to revert to traditional operation in case of failure of any electronic component of the present system.

Abstract: An electronically controlled burner management system for oilfield separators. The system includes an autonomous standing pilot spark ignition that includes a self-aligning clamp that holds the igniter to the burner nozzle. The self-aligning clamp enables rapid installation and removal, lowering the total cost of ownership. The autonomous spark ignition system incorporates temperature sensors to determine when the standing pilot needs to be relit, and can shut off the gas or other fuel flow to the standing pilot and the main burner when the pilot is not lit. The system increases oil and gas production from the well, reduces fugitive emissions of unburned gas, and improves oilfield worker safety. When installed or retrofitted into an existing oilfield separator, the original burner control components are left in place, allowing the user to revert to traditional operation in case of failure of any electronic component of the present system.

Abstract: Method and apparatus are provided for determining a grid condition, such as a weakened grid condition, and controlling a power plant, such as a wind or solar power plant, in a manner which is appropriate to the grid condition. The method includes measuring (14) output parameters of a generator, such as a wind turbine or PV generator. The measured output parameters include reactive power and voltage. The method further includes determining (16) a relationship between the measured output parameters of the generator. The relationship between the measured output parameters of the generator is indicative of a condition of a power grid to which the plant supplies power. The method allows controlling (18) the plant responsive to the relationship between the measured output parameters of the generator to avoid onset of oscillatory behavior, which could otherwise occur in the power plant in the presence of a weakened grid condition.

Abstract: A method and a controller for continuously operating a plurality of electric energy generating machines during a high voltage condition at a point of common coupling of the plurality of electric energy generating machines are provided herein. The method includes a) sensing a voltage level at the point of common coupling exceeding a permitted voltage level; b) curtailing an active power output of the plurality of electric energy generating machines such that a reactive capability of the plurality of electric energy generating machines is increased; c) establishing a set point of an electric quantity being present at the point of common coupling such that a reactive electric component providable by the electric energy generating machines is increased; and d) controlling an electric energy generating machine based on the set point of the electric quantity such that the high voltage condition at common coupling is at least partially remedied.

Abstract: A wind turbine generator park (1) for supplying power to a power system (37), the park having an assigned first droop response characteristic for use in responding to an under-frequency occurrence on the power system (37). The park comprises a first comparator (108) for generating a first signal when the park is operating according to a curtailed condition, a second comparator (100) for indicating that a change in a frequency of a voltage or current on the power system (37) is greater than a first threshold value, and a controller (114) responsive to the first and second signals for controlling the park according to a second response characteristic causing the park (1) to supply an amount of power to the power system (37) greater than the power supplied according to the first droop response characteristic.

Abstract: Device structures, design structures, and fabrication methods for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A portion of a device layer of a semiconductor-on-insulator substrate is patterned to form a device region. A well of a first conductivity type is formed in the epitaxial layer and the device region. A doped region of a second conductivity type is formed in the well and defines a junction with a portion of the well. The epitaxial layer includes an exterior sidewall spaced from an exterior sidewall of the device region. Another portion of the device layer may be patterned to form fins for fin-type field-effect transistors.

Abstract: Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region.

Abstract: An semiconductor structure, method of fabrication therefor, and design structure therefor is provided. A thermal grid is formed over at least a portion of a substrate. An insulating layer is formed over at least a portion of the thermal grid. A resistor is formed over at least a portion of the insulating layer. A buried interconnect is connected to the thermal grid via at least one contact. The buried interconnect is adapted to receive thermal energy from the thermal grid via the at least one contact.

Abstract: Device structures and design structures for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A device region is formed in a trench and is coupled with a handle wafer of a semiconductor-on-insulator substrate. The device region extends through a buried insulator layer of the semiconductor-on-insulator substrate toward a top surface of a device layer of the semiconductor-on-insulator substrate. The device region is comprised of lightly-doped semiconductor material. The device structure further includes a doped region formed in the device region and that defines a junction. A portion of the device region is laterally positioned between the doped region and the buried insulator layer of the semiconductor-on-insulator substrate. Another region of the device layer may be patterned to form fins for fin-type field-effect transistors.

Abstract: Device structures, design structures, and fabrication methods for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A portion of a device layer of a semiconductor-on-insulator substrate is patterned to form a device region. A well of a first conductivity type is formed in the epitaxial layer and the device region. A doped region of a second conductivity type is formed in the well and defines a junction with a portion of the well. The epitaxial layer includes an exterior sidewall spaced from an exterior sidewall of the device region. Another portion of the device layer may be patterned to form fins for fin-type field-effect transistors.

Abstract: Method and apparatus are provided for determining a grid condition, such as a weakened grid condition, and controlling a power plant, such as a wind or solar power plant, in a manner which is appropriate to the grid condition. The method includes measuring (14) output parameters of a generator, such as a wind turbine or PV generator. The measured output parameters include reactive power and voltage. The method further includes determining (16) a relationship between the measured output parameters of the generator. The relationship between the measured output parameters of the generator is indicative of a condition of a power grid to which the plant supplies power. The method allows controlling (18) the plant responsive to the relationship between the measured output parameters of the generator to avoid onset of oscillatory behavior, which could otherwise occur in the power plant in the presence of a weakened grid condition.

Abstract: An semiconductor structure, method of fabrication therefor, and design structure therefor is provided. A thermal grid is formed over at least a portion of a substrate. An insulating layer is formed over at least a portion of the thermal grid. A resistor is formed over at least a portion of the insulating layer. A buried interconnect is connected to the thermal grid via at least one contact. The buried interconnect is adapted to receive thermal energy from the thermal grid via the at least one contact.

Abstract: Device structures, design structures, and fabrication methods for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A portion of a device layer of a semiconductor-on-insulator substrate is patterned to form a device region. A well of a first conductivity type is formed in the epitaxial layer and the device region. A doped region of a second conductivity type is formed in the well and defines a junction with a portion of the well. The epitaxial layer includes an exterior sidewall spaced from an exterior sidewall of the device region. Another portion of the device layer may be patterned to form fins for fin-type field-effect transistors.

Abstract: A method and a controller for continuously operating a plurality of electric energy generating machines during a high voltage condition at a point of common coupling of the plurality of electric energy generating machines are provided herein. The method includes a) sensing a voltage level at the point of common coupling exceeding a permitted voltage level; b) curtailing an active power output of the plurality of electric energy generating machines such that a reactive capability of the plurality of electric energy generating machines is increased; c) establishing a set point of an electric quantity being present at the point of common coupling such that a reactive electric component providable by the electric energy generating machines is increased; and d) controlling an electric energy generating machine based on the set point of the electric quantity such that the high voltage condition at common coupling is at least partially remedied.

Abstract: A semiconductor device including at least one capacitor formed in wiring levels on a silicon-on-insulator (SOI) substrate, wherein the at least one capacitor is coupled to an active layer of the SOI substrate. A method of fabricating a semiconductor structure includes forming an SOI substrate, forming a BOX layer over the SOI substrate, and forming at least one capacitor in wiring levels on the BOX layer, wherein the at least one capacitor is coupled to an active layer of the SOI substrate.

Abstract: An Integrated Circuit (IC) and a method of making the same. In one embodiment, the IC includes: a substrate; a first semiconductor layer disposed on the substrate; a shallow trench isolation (STI) extending through the first semiconductor layer to within a portion of the substrate, the STI substantially separating a first n+ region and a second n+ region; and a gate disposed on a portion of the first semiconductor layer and connected to the STI, the gate including: a buried metal oxide (BOX) layer disposed on the first semiconductor layer and connected to the STI; a cap layer disposed on the BOX layer; and a p-type well component disposed within the first semiconductor layer and the substrate, the p-type well component connected to the second n+ region.

Abstract: Device structures and design structures for passive devices that may be used as electrostatic discharge protection devices in fin-type field-effect transistor integrated circuit technologies. A device region is formed in a trench and is coupled with a handle wafer of a semiconductor-on-insulator substrate. The device region extends through a buried insulator layer of the semiconductor-on-insulator substrate toward a top surface of a device layer of the semiconductor-on-insulator substrate. The device region is comprised of lightly-doped semiconductor material. The device structure further includes a doped region formed in the device region and that defines a junction. A portion of the device region is laterally positioned between the doped region and the buried insulator layer of the semiconductor-on-insulator substrate. Another region of the device layer may be patterned to form fins for fin-type field-effect transistors.

Abstract: Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region.

Abstract: A wind turbine generator park (1) for supplying power to a power system (37), the park having an assigned first droop response characteristic for use in responding to an under-frequency occurrence on the power system (37). The park comprises a first comparator (108) for generating a first signal when the park is operating according to a curtailed condition, a second comparator (100) for indicating that a change in a frequency of a voltage or current on the power system (37) is greater than a first threshold value, and a controller (114) responsive to the first and second signals for controlling the park according to a second response characteristic causing the park (1) to supply an amount of power to the power system (37) greater than the power supplied according to the first droop response characteristic.

Abstract: Semiconductor structures and methods of manufacture are disclosed herein. Specifically, disclosed herein are methods of manufacturing a high-voltage metal-oxide-semiconductor field-effect transistor and respective structures. A method includes forming a field-effect transistor (FET) on a substrate in a FET region, forming a high-voltage FET (HVFET) on a dielectric stack over a over lightly-doped diffusion (LDD) drain in a HVFET region, and forming an NPN on the substrate in an NPN region.