Abstract: A method for applying photoresist to a top surface of a semiconductor wafer for defining an electronic circuit pattern. The wafer is placed on a horizontal turntable and liquid solvent is dispensed onto the wafer's top surface. Spinning the wafer distributes the solvent to a substantially uniform film thickness over the entire top surface. Liquid photoresist is dispensed onto the top surface over the solvent film, preferably while spinning the wafer, to distribute a photoresist layer over the entire top surface. Photoresist discharge is controlled so that the wafer sirface remains entirely wetted by the solvent film during distribution of the liquid photoresist. The solvent viscosity is lower than the liquid photoresist viscosity and the solvent film thickness is sufficient to enable the photoresist to fully cover any bare silicon, high density or undercut circuit features, generally in a range of 500 to 10,000 Angstroms and preferably 1,000 to 5,000 Angstroms.