Abstract: A sputter etch system and a method of conducting a sputter etch. The sputter etch system includes an etch chamber with a wafer pedestal having a top surface to support a wafer and a magnet configured to provide a continuous magnetic field directed at the top surface of the wafer pedestal.

Abstract: A sputter etch system and a method of conducting a sputter etch. The sputter etch system includes an etch chamber with a wafer pedestal having a top surface to support a wafer and a magnet configured to provide a continuous magnetic field directed at the top surface of the wafer pedestal.

Abstract: A method for cleaning a chemical vapor deposition (CVD) process for depositing tungsten. After the tungsten has been deposited and the wafer has been removed from the chamber, the chamber undergoes an in-situ cleaning process. In the currently preferred embodiment the in-situ cleaning process consists of cleaning the chamber with nitrogen tri-fluoride (NF.sub.3) and hydrogen (H.sub.2) nitrogen (N.sub.2) plasmas. The tungsten CVD cleaning process also includes purging the chamber with the dilute mixture of silane (SiH.sub.4), argon (Ar) and nitrogen (N.sub.2).

Abstract: A high density, high frequency, plasma-enhanced chemical vapor deposition (PECVD) process for depositing a passivation layer on a semiconductor integrated circuit wafer. The wafer rests on a grounded electrode while a second electrode disperses gases over the wafer. The second electrode disperses the gases in the same manner as a showerhead. An radio-frequency (RF) potential applied to the showerhead electrode causes the gases to react under specific temperature, pressure, and electrode spacing conditions. Furthermore, the present invention is a low particulate process. The process forms a film of high UV transparency. The chamber is cleaned after removal of the wafer, and gas lines are evacuated. This results in a low particle process.

Abstract: A silicon nitride layer is prepared on the surface of a silicon substrate by carrying out a surface reaction on the substrate in a vacuum chamber that contains an electrode which is capacitively coupled to an rf generator. A second electrode within the chamber, or a metal wall of the chamber itself, is connected to ground. The silicon substrates to be treated are placed on one of the electrodes to be in electrical and physical contact therewith, and a reagent gas that contains nitrogen is introduced into the chamber. An rf voltage is then applied between the electrodes to ionize and activate the gas, and cause ions and other active species thereof to be directed into the silicon substrate. The nitrogen ions and other active species that are created as a result of the application of the rf power can be directed at the surface of a number of wafers simultaneously.