Abstract: Aspects disclosed in the detailed description include integrated circuit (IC) design methods using engineering change order (ECO) cell architectures. In particular, exemplary aspects provide a fill algorithm that is both single- and multi-row aware, considers a poly-pitch count, and utilizes metallization of the “empty space” relative to a suite of available fill cells. The algorithm is also aware of timing critical logic elements and may place ECO fill cells in near proximity to such timing sensitive circuits or other margin critical circuits to allow for decoupling or, if there is a logic error, an ECO cell is placed such that the ECO cell is well positioned to be repurposed as a delay circuit or other function to aid in margin control. For maximum flexibility, the algorithm may also address both pre- and post-route applications.

Abstract: Disclosed systems and methods pertain to finfet based integrated circuits designed with logic cell architectures which support multiple diffusion regions for n-type and p-type diffusions. Different diffusion regions of each logic cell can have different widths or fin counts. Abutting two logic cells is enabled based on like fin counts for corresponding p-diffusion regions and n-diffusion regions of the two logic cells. Diffusion fills are used at common edges between the two logic cells for extending lengths of diffusion, based on the like fin counts. The logic cell architectures support via redundancy and the ability to selectively control threshold voltages of different logic cells with implant tailoring. Half-row height cells can be interleaved with standard full-row height cells.

Abstract: Aspects disclosed in the detailed description include integrated circuit (IC) design methods using engineering change order (ECO) cell architectures. In particular, exemplary aspects provide a fill algorithm that is both single- and multi-row aware, considers a poly-pitch count, and utilizes metallization of the “empty space” relative to a suite of available fill cells. The algorithm is also aware of timing critical logic elements and may place ECO fill cells in near proximity to such timing sensitive circuits or other margin critical circuits to allow for decoupling or, if there is a logic error, an ECO cell is placed such that the ECO cell is well positioned to be repurposed as a delay circuit or other function to aid in margin control. For maximum flexibility, the algorithm may also address both pre- and post-route applications.

Abstract: Engineering change order (ECO) cell architecture and implementation is disclosed. In particular, exemplary aspects disclosed herein provide a generic cell structure that may be readily modified to effect an ECO without requiring extensive mask changes beyond one or two levels including the level in which the cell is located. Further, this generic cell structure can be “parked” fairly deep in the manufacturing process, such as in the middle-end-of-line (MEOL), so that fewer changes to other masks are needed in the event of a change. The generic cell may further act as a filler cell for pattern density. Inclusion of such a generic cell in a circuit design can help alleviate the need for extensive mask redesign and accompanying delays in the production of finished silicon.

Abstract: Disclosed systems and methods pertain to finfet based integrated circuits designed with logic cell architectures which support multiple diffusion regions for n-type and p-type diffusions. Different diffusion regions of each logic cell can have different widths or fin counts. Abutting two logic cells is enabled based on like fin counts for corresponding p-diffusion regions and n-diffusion regions of the two logic cells. Diffusion fills are used at common edges between the two logic cells for extending lengths of diffusion, based on the like fin counts. The logic cell architectures support via redundancy and the ability to selectively control threshold voltages of different logic cells with implant tailoring. Half-row height cells can be interleaved with standard full-row height cells.

Abstract: Complementary metal oxide semiconductor (MOS) (CMOS) standard cell circuits employing metal lines in a first metal layer used for routing, and related methods are disclosed. In one aspect, a CMOS standard cell circuit includes first supply rail, second supply rail, and metal lines disposed in the first metal layer. One or more of the metal lines are dynamically cut corresponding to a first cell boundary and a second cell boundary of the CMOS standard cell such that the metal lines have cut edges corresponding to the first and second cell boundaries. Metal lines not cut corresponding to the first and second cell boundaries can be used to interconnect nodes of the CMOS standard cell circuit. Dynamically cutting the metal lines allows the first metal layer to be used for routing, reducing routing in other metal layers such that fewer vias and metal lines are disposed above the first metal layer.

Abstract: Disclosed systems and methods pertain to finfet based integrated circuits designed with logic cell architectures which support multiple diffusion regions for n-type and p-type diffusions. Different diffusion regions of each logic cell can have different widths or fin counts. Abutting two logic cells is enabled based on like fin counts for corresponding p-diffusion regions and n-diffusion regions of the two logic cells. Diffusion fills are used at common edges between the two logic cells for extending lengths of diffusion, based on the like fin counts. The logic cell architectures support via redundancy and the ability to selectively control threshold voltages of different logic cells with implant tailoring. Half-row height cells can be interleaved with standard full-row height cells.

Abstract: Disclosed systems and methods pertain to finfet based integrated circuits designed with logic cell architectures which support multiple diffusion regions for n-type and p-type diffusions. Different diffusion regions of each logic cell can have different widths or fin counts. Abutting two logic cells is enabled based on like fin counts for corresponding p-diffusion regions and n-diffusion regions of the two logic cells. Diffusion fills are used at common edges between the two logic cells for extending lengths of diffusion, based on the like fin counts. The logic cell architectures support via redundancy and the ability to selectively control threshold voltages of different logic cells with implant tailoring. Half-row height cells can be interleaved with standard full-row height cells.