Patents by Inventor William Joseph Gallagher
William Joseph Gallagher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230345738Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.Type: ApplicationFiled: June 15, 2023Publication date: October 26, 2023Inventors: Shy-Jay Lin, Chien-Min Lee, Hiroki Noguchi, MingYuan Song, Yen-Lin Huang, William Joseph Gallagher
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Publication number: 20230326508Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: ApplicationFiled: May 22, 2023Publication date: October 12, 2023Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Patent number: 11723218Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.Type: GrantFiled: March 29, 2021Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shy-Jay Lin, Chien-Min Lee, Hiroki Noguchi, Mingyuan Song, Yen-Lin Huang, William Joseph Gallagher
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Patent number: 11699474Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: GrantFiled: March 16, 2022Date of Patent: July 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Publication number: 20220208244Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: ApplicationFiled: March 16, 2022Publication date: June 30, 2022Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Patent number: 11289143Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: GrantFiled: August 25, 2020Date of Patent: March 29, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Publication number: 20210408115Abstract: A device includes a substrate having a first side and a second side, a first transistor that includes a first gate over a first protrusion and a first source region and a first drain region interposing the first protrusion, a first buried contact disposed adjacent to the first protrusion and having at least a portion extending into the substrate, a first contact plug disposed over the first drain region, first conductive lines disposed over the first contact plug and electrically connecting to the first drain region by the first contact plug, first via penetrating through the substrate and connecting the first buried contact; and second conductive lines disposed over the second side of the substrate and electrically connecting to the first via. The first buried contact is electrically connecting to the first source region or the first gate.Type: ApplicationFiled: March 29, 2021Publication date: December 30, 2021Inventors: Shy-Jay Lin, Chien-Min Lee, Hiroki Noguchi, MingYuan Song, Yen-Lin Huang, William Joseph Gallagher
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Publication number: 20210134339Abstract: A magnetic memory device includes a magnetic tunnel junction (MTJ) stack, a spin-orbit torque (SOT) induction wiring disposed over the MTJ stack, a first terminal coupled to a first end of the SOT induction wiring, a second terminal coupled to a second end of the SOT induction wiring, and a shared selector layer coupled to the first terminal.Type: ApplicationFiled: August 25, 2020Publication date: May 6, 2021Inventors: MingYuan Song, Shy-Jay Lin, Chien-Min Lee, William Joseph Gallagher
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Patent number: 7506236Abstract: Techniques for data storage are provided. In one aspect, a method for writing one or more magnetic memory cells comprises the following steps. Data is written to one or more of the magnetic memory cells. It is detected whether there are any errors in the data written to the one or more magnetic memory cells. The data is rewritten to each of the one or more previously written magnetic memory cells in which an error is detected.Type: GrantFiled: May 28, 2004Date of Patent: March 17, 2009Assignee: International Business Machines CorporationInventors: William Joseph Gallagher, Daniel Christopher Worledge
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Patent number: 6590750Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.Type: GrantFiled: February 10, 1998Date of Patent: July 8, 2003Assignee: International Business Machines CorporationInventors: David William Abraham, Philip Edward Batson, John Slonczewski, Philip Louis Trouilloud, William Joseph Gallagher, Stuart Parkin
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Patent number: 6452764Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.Type: GrantFiled: October 16, 2000Date of Patent: September 17, 2002Assignee: International Business Machines CorporationInventors: David William Abraham, Philip Edward Batson, William Joseph Gallagher, Stuart Parkin, John Slonczewski, Philip Louis Trouilloud
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Patent number: 6392156Abstract: Improved conductors and superconducting magnets are described utilizing superconducting materials exhibiting critical field anisotropy. This anisotropy is one in which the ability of the superconductor to stay in a superconducting state depends on the orientation of a magnetic field applied to the superconductor with respect to the direction of current flow in the superconductor. This anisotropy is utilized in the design of conductors and magnet windings comprising the superconductive material and specifically is directed to magnet windings in which the direction of high critical current through the superconductor is parallel to the magnetic field produced by current in these windings in order to obtain high critical fields. Particularly favorable examples of a superconducting material are the so-called high Tc superconductors in which the primary supercurrent flow is confined to 2 dimensional Cu—O planes.Type: GrantFiled: February 28, 1995Date of Patent: May 21, 2002Assignee: International Business Machines CorporationInventors: Arthur Davidson, Timothy Rea Dinger, William Joseph Gallagher, Thomas Kimber Worthington
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Patent number: 6368878Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.Type: GrantFiled: March 21, 2000Date of Patent: April 9, 2002Assignee: International Business Machines CorporationInventors: David William Abraham, William Joseph Gallagher, Philip Louis Trouilloud
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Publication number: 20010040778Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.Type: ApplicationFiled: February 10, 1998Publication date: November 15, 2001Inventors: DAVID WILLIAM ABRAHAM, PHILIP EDWARD BATSON, JOHN SLONCZEWSKI, PHILIP LOUIS TROUILLOUD, WILLIAM JOSEPH GALLAGHER, STUART PARKIN
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Patent number: 6226160Abstract: A magnetic tunnel junction (MTJ) device has sufficiently small area to make it commercially practical as both a magnetic memory cell and a magnetoresistive read head. The small area magnetic tunnel junction device has both low resistance and high magnetoresistance. The magnetic tunnel junction device is made possible by the use of a thin aluminum layer in a thickness range of approximately 5-12 Angstroms. The Al layer is completely oxidized, without oxidizing the adjacent ferromagnetic layers, to form the insulating tunnel barrier layer of the MTJ.Type: GrantFiled: April 15, 1999Date of Patent: May 1, 2001Assignee: International Business Machines CorporationInventors: William Joseph Gallagher, Stuart Stephen Papworth Parkin
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Patent number: 6104633Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.Type: GrantFiled: February 10, 1998Date of Patent: August 15, 2000Assignee: International Business Machines CorporationInventors: David William Abraham, William Joseph Gallagher, Philip Louis Trouilloud
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Patent number: 6072718Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array.Type: GrantFiled: February 10, 1998Date of Patent: June 6, 2000Assignee: International Business Machines CorporationInventors: David William Abraham, William Joseph Gallagher, Philip Louis Trouilloud
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Patent number: 5991193Abstract: A nonvolatile memory array includes a substrate, a first plurality of electrically conductive traces formed on the substrate, a second plurality of electrically conductive traces formed on the substrate and overlapping the first plurality of traces at a plurality of intersection regions, and a plurality of memory cells formed on the substrate. Each memory cell is located at an intersection region between one of the first plurality of traces and one of the second plurality of traces and includes a bidirectionally conducting nonlinear resistance selection device and a magneto-resistive element electrically coupled in series with the selection device. The array is biased during a read operation by biasing a selected trace of a first plurality of electrically conductive traces at a first bias potential. All other traces of the first plurality of conductive traces are biased at a second bias potential. A selected trace of a second plurality of conductive traces is biased at a third bias potential.Type: GrantFiled: December 2, 1997Date of Patent: November 23, 1999Assignee: International Business Machines CorporationInventors: William Joseph Gallagher, Roy Edwin Scheuerlein
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Patent number: 5841692Abstract: A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is formed as a sandwich of two antiferromagnetically coupled ferromagnetic layers separated by a metallic layer. The free and pinned ferromagnetic layers are located in separate spaced-apart planes so as to not overlap the tunnel barrier layer.Type: GrantFiled: July 16, 1997Date of Patent: November 24, 1998Assignee: International Business Machines CorporationInventors: William Joseph Gallagher, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Jonathan Zanhong Sun
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Patent number: 5650958Abstract: A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so as to not be able to rotate in the presence of an applied magnetic field in the range of interest, a "free" ferromagnetic layer whose magnetization is able to be rotated in the plane of the layer relative to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier layer located between and in contact with both ferromagnetic layers. The pinned ferromagnetic layer is pinned by interfacial exchange coupling with an adjacent antiferromagnetic layer. The amount of tunneling current that flows perpendicularly through the two ferromagnetic layers and the intermediate tunnel barrier layer depends on the relative magnetization directions of the two ferromagnetic layers.Type: GrantFiled: March 18, 1996Date of Patent: July 22, 1997Assignee: International Business Machines CorporationInventors: William Joseph Gallagher, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Jonathan Zanhong Sun