Patents by Inventor Wim Tjibbo Tel

Wim Tjibbo Tel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200310242
    Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
    Type: Application
    Filed: May 17, 2017
    Publication date: October 1, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Richard Johannes Franciscus VAN HAREN, Reiner Maria JUNGBLUT, Leon Paul VAN DIJK, Willem Seine Christian ROELOFS, Wim Tjibbo TEL, Stefan HUNSCHE, Maurits VAN DER SCHAAR
  • Patent number: 10775705
    Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: September 15, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Jozef Maria Finders, Orion Jonathan Pierre Mouraille, Anton Bernhard Van Oosten
  • Publication number: 20200249576
    Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
    Type: Application
    Filed: July 11, 2018
    Publication date: August 6, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Patrick WARNAAR, Patricius Aloysius Jacobus TINNEMANS, Grzegorz GRZELA, Everhardus Cornelis MOS, Wim Tjibbo TEL, Marinus JOCHEMSEN, Bart Peter Bert SEGERS, Frank STAALS
  • Patent number: 10725372
    Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.
    Type: Grant
    Filed: January 20, 2016
    Date of Patent: July 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Marinus Jochemsen, Frank Staals, Christopher Prentice, Laurent Michel Marcel Depre, Johannes Marcus Maria Beltman, Roy Werkman, Jochem Sebastiaan Wildenberg, Everhardus Cornelis Mos
  • Patent number: 10712672
    Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: July 14, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Marinus Jochemsen, Stefan Hunsche, Wim Tjibbo Tel
  • Publication number: 20200211819
    Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.
    Type: Application
    Filed: December 30, 2019
    Publication date: July 2, 2020
    Inventors: Hermanus Adrianus DILLEN, Wim Tjibbo Tel, Willem Louis Van Mierlo
  • Publication number: 20200133144
    Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.
    Type: Application
    Filed: May 18, 2018
    Publication date: April 30, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Emil Peter SCHMITT-WEAVER, Kaustuve BHATTACHARYYA, Rene Marinus Gerardus Johan QUEENS, Wolfgang Helmut HENKE, Wim Tjibbo TEL, Theodorus Franeiscus Adrianus Maria LINSCHOTEN
  • Publication number: 20200124968
    Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
    Type: Application
    Filed: December 20, 2019
    Publication date: April 23, 2020
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Mark John Maslow, Frank Staals, Paul Christiaan Hinnen
  • Patent number: 10627722
    Abstract: Provided is a process including: obtaining a layout specifying, at least in part, a pattern to be transferred to a substrate via a patterning process and an etch process; and modifying, with one or more processors, the layout to include an etch-assist feature that is larger than a resolution limit of the patterning process and smaller than a resolution limit of the etch process, the etch-assist feature being configured to reduce a bias of the patterning process or the etch process, to reduce an etch induced shift of a feature in the layout due to the etch process, or to expand a process window of another patterning process.
    Type: Grant
    Filed: December 21, 2016
    Date of Patent: April 21, 2020
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo Tel, Thomas I. Wallow
  • Patent number: 10571806
    Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: February 25, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Mark John Maslow, Frank Staals, Paul Christiaan Hinnen
  • Publication number: 20200004164
    Abstract: A method for monitoring a lithographic process, and associated lithographic apparatus. The method includes obtaining height variation data relating to a substrate supported by a substrate support and fitting a regression through the height variation data, the regression approximating the shape of the substrate; residual data between the height variation data and the regression is determined; and variation of the residual data is monitored over time. The residual data may be deconvolved based on known features of the substrate support.
    Type: Application
    Filed: January 3, 2018
    Publication date: January 2, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Emil Peter SCHMITT-WEAVER, Kaustuve BHATTACHARYYA, Wim Tjibbo TEL, Frank STAALS, Leon Martin LEVASIER
  • Publication number: 20190361358
    Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.
    Type: Application
    Filed: February 12, 2018
    Publication date: November 28, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria I KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
  • Publication number: 20190310553
    Abstract: A method including determining a first color pattern and a second color pattern associated with a hot spot of a design layout pattern, the design layout pattern configured for transfer to a substrate, and predicting, by a hardware computer system, whether there would be a defect at the hot spot on the substrate caused by overlay error, based at least in part on a measurement of an overlay error between the first color pattern and the second color pattern.
    Type: Application
    Filed: July 7, 2017
    Publication date: October 10, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Marinus JOCHEMSEN, Stefan HUNSCHE, Wim Tjibbo TEL
  • Patent number: 10394136
    Abstract: A method involving measuring a first metrology target designed for a first range of values of a process parameter; measuring a second metrology target designed for a second range of values of the same process parameter, the second range different than the first range and the second metrology target having a different physical design than the first metrology target; and deriving process window data from a value of the process parameter in the first range determined from the measuring of the first metrology target, and from a value of the process parameter in the second range determined from the measuring of the second metrology target.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: August 27, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Wim Tjibbo Tel, Marinus Jochemsen
  • Publication number: 20190243259
    Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.
    Type: Application
    Filed: June 22, 2017
    Publication date: August 8, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Frank STAALS, Martin Jules Marie-Emile DE NIVELLE, Tanbir HASAN
  • Publication number: 20190204749
    Abstract: A method of tuning a patterning stack, the method including: defining a function that measures how a parameter representing a physical characteristic pertaining to a pattern transferred into a patterning stack on a substrate is affected by change in a patterning stack variable, the patterning stack variable representing a physical characteristic of a material layer of the patterning stack; varying, by a hardware computer system, the patterning stack variable and evaluating, by the hardware computer system, the function with respect to the varied patterning stack variable, until a termination condition is satisfied; and outputting a value of the patterning stack variable when the termination condition is satisfied.
    Type: Application
    Filed: August 2, 2017
    Publication date: July 4, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Jozef Maria FINDERS, Orion Jonathan Pierre MOURAILLE, Anton Bernhard VAN OOSTEN
  • Publication number: 20190196334
    Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.
    Type: Application
    Filed: August 3, 2017
    Publication date: June 27, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Mark John MASLOW, Frank STAALS, Paul Christiaan HINNEN
  • Patent number: 10289009
    Abstract: A lithographic apparatus obtains a height map of a substrate and uses the height map when controlling imaging of the pattern to the substrate. The apparatus is arranged to disregard at least partially height anomalies when controlling the imaging. The height anomalies may be identified by processing the height map. For example, in some embodiments the height anomalies are identified using a shape recognition model. In some embodiments, a modified version of the height map is produced in which the height anomalies are at least partially removed, and the modified version of the height map is used in controlling the imaging. An anomaly map may be used together with the (unmodified) height map to control imaging.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: May 14, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Bram Van Hoof, Wim Tjibbo Tel
  • Publication number: 20190137889
    Abstract: A method to improve a lithographic process of imaging a portion of a design layout onto a substrate using a lithographic apparatus, the method including computing a multi-variable cost function. The multi-variable cost function represents an interlayer characteristic, the interlayer characteristic being a function of a plurality of design variables that represent one or more characteristics of the lithographic process. The method further includes reconfiguring one or more of the characteristics of the lithographic process by adjusting one or more of the design variables and computing the multi-variable cost function with the adjusted one or more design variables, until a certain termination condition is satisfied.
    Type: Application
    Filed: March 14, 2017
    Publication date: May 9, 2019
    Applicant: ASML, NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Laurent Michael Marcel DEPRE, Jorge Humberto SALVADOR ENTRADAS
  • Publication number: 20190086810
    Abstract: A method including: computing a value of a first variable of a pattern of, or for, a substrate processed by a patterning process by combining a fingerprint of the first variable on the substrate and a certain value of the first variable; and determining a value of a second variable of the pattern based at least in part on the computed value of the first variable.
    Type: Application
    Filed: February 17, 2017
    Publication date: March 21, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Wim Tjibbo TEL, Frank STAALS, Mark John MASLOW, Roy ANUNCIADO, Marinus JOCHEMSEN, Hugo Augustinus Joseph CRAMER, Thomas THEEUWES, Paul Christiaan HINNEN