Patents by Inventor Winston K. Chan
Winston K. Chan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240055545Abstract: An example image intensifier includes a quantum well infrared photodetector (QWIP) configured to receive photons to photoexcite carriers out of a localized quantum state; and a light emitting diode (LED), wherein the photoexcited carriers control the LED.Type: ApplicationFiled: August 9, 2023Publication date: February 15, 2024Inventors: David John Hill, Winston K. Chan
-
Patent number: 11735692Abstract: Methods, systems, and apparatuses are described for a CMOS compatible substrate having multiple stacks of semiconductor layers. The multiple stacks, at least, each include i) a layer of a tellurium based semiconductor layer on top of ii) a porous silicon layer. The porous silicon layer is a compliant layer to accept structural defects from the tellurium based semiconductor layer into the porous silicon layer. The multiple stacks are grown on the CMOS compatible substrate.Type: GrantFiled: August 22, 2019Date of Patent: August 22, 2023Assignee: SRI InternationalInventor: Winston K. Chan
-
Patent number: 11688638Abstract: A system to manufacture a plurality of dies may include an etching tool, an electrically-conductive-adhesive-composition, a heat-applying-extraction-tool and a porous substrate cooperating with an evacuation component. The etching tool uses an ion beam that is configured to singulate a plurality of dies on a wafer with an ion etching process. The electrically-conductive-adhesive-composition is located between the wafer and a porous substrate carrying the wafer during the ion etching process. The electrically-conductive-adhesive-composition adheres the wafer to the porous substrate to keep the dies in place during the ion etching process. The electrically-conductive-adhesive-composition also aids in conducting electrons away from the wafer as a drain during the ion etching process.Type: GrantFiled: March 27, 2018Date of Patent: June 27, 2023Assignee: SRI InternationalInventors: Winston K. Chan, Joey J. Michalchuk
-
Patent number: 11580344Abstract: An integrated circuit having Radio Frequency Identification components and circuitry used for authentication is discussed. The RFID components and circuitry include two or more coils and corresponding electrical circuits that are tuned to use two or more different resonant frequencies including: a first resonant RF used for power generation and a second resonant RF used for data communication. The integrated circuit contains a unique signature that is used for the authentication with two or more aspects including i) a first aspect that is a programmed password in a memory embedded on the integrated circuit, and ii) a second aspect that is a unique, randomly generated code based upon a physical characteristic of the integrated circuit.Type: GrantFiled: March 27, 2018Date of Patent: February 14, 2023Assignee: SRI InternationalInventors: Sterling E. McBride, Michael G. Kane, Alex Krasner, Richard Sita, Winston K. Chan, Mark F. Schutzer
-
Patent number: 11569077Abstract: The disclosure includes an outer electrode and an inner electrode. The outer electrode defines an inner volume and is configured to receive injected electrons through at least one aperture. The inner electrode positioned in the inner volume. The outer electrode and inner electrode are configured to confine the received electrons in orbits around the inner electrode in response to an electric potential between the outer electrode and the inner electrode. The apparatus does not include a component configured to generate an electron-confining magnetic field.Type: GrantFiled: July 11, 2018Date of Patent: January 31, 2023Assignee: SRI INTERNATIONALInventors: Sterling Eduardo McBride, Joey J. Michalchuk, Christopher E. Holland, Ashish Chaudhary, Winston K. Chan
-
Publication number: 20220209040Abstract: A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 ?m as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.Type: ApplicationFiled: January 19, 2022Publication date: June 30, 2022Inventor: Winston K. Chan
-
Patent number: 11362232Abstract: A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 ?m as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.Type: GrantFiled: May 24, 2019Date of Patent: June 14, 2022Assignee: SRI InternationalInventor: Winston K. Chan
-
Patent number: 11271130Abstract: A linear mode avalanche photodiode senses light and outputs electrical current by being configured to, generate a gain equal to or greater than 1000 times amplification while generating an excess noise factor of less than 3 times a thermal noise present at or above a non-cryogenic temperature due to the gain from the amplification. The linear mode avalanche photodiode detects one or more photons in the light by using a superlattice structure that is matched to suppress impact ionization for a first carrier in the linear mode avalanche photodiode while at least one of 1) increasing impact ionization, 2) substantially maintaining impact ionization, and 3) suppressing impact ionization to a lesser degree for a second carrier. The first carrier having its impact ionization suppressed is either i) an electron or ii) a hole; and then, the second carrier is the electron or the hole.Type: GrantFiled: July 11, 2018Date of Patent: March 8, 2022Assignee: SRI InternationalInventor: Winston K. Chan
-
Publication number: 20210359160Abstract: Methods, systems, and apparatuses are described for a CMOS compatible substrate having multiple stacks of semiconductor layers. The multiple stacks, at least, each include i) a layer of a tellurium based semiconductor layer on top of ii) a porous silicon layer. The porous silicon layer is a compliant layer to accept structural defects from the tellurium based semiconductor layer into the porous silicon layer. The multiple stacks are grown on the CMOS compatible substrate.Type: ApplicationFiled: August 22, 2019Publication date: November 18, 2021Inventor: Winston K. Chan
-
Publication number: 20210249552Abstract: A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 ?m as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode.Type: ApplicationFiled: May 24, 2019Publication date: August 12, 2021Inventor: Winston K. CHAN
-
Publication number: 20210217918Abstract: A linear mode avalanche photodiode senses light and outputs electrical current by being configured to, generate a gain equal to or greater than 1000 times amplification while generating an excess noise factor of less than 3 times a thermal noise present at or above a non-cryogenic temperature due to the gain from the amplification. The linear mode avalanche photodiode detects one or more photons in the light by using a superlattice structure that is matched to suppress impact ionization for a first carrier in the linear mode avalanche photodiode while at least one of 1) increasing impact ionization, 2) substantially maintaining impact ionization, and 3) suppressing impact ionization to a lesser degree for a second carrier. The first carrier having its impact ionization suppressed is either i) an electron or ii) a hole; and then, the second carrier is the electron or the hole.Type: ApplicationFiled: July 11, 2018Publication date: July 15, 2021Inventor: Winston K. Chan
-
Publication number: 20210158121Abstract: An integrated circuit having Radio Frequency Identification components and circuitry used for authentication is discussed. The RFID components and circuitry include two or more coils and corresponding electrical circuits that are tuned to use two or more different resonant frequencies including: a first resonant RF used for power generation and a second resonant RF used for data communication. The integrated circuit contains a unique signature that is used for the authentication with two or more aspects including i) a first aspect that is a programmed password in a memory embedded on the integrated circuit, and ii) a second aspect that is a unique, randomly generated code based upon a physical characteristic of the integrated circuit.Type: ApplicationFiled: March 27, 2018Publication date: May 27, 2021Inventors: Sterling E. McBride, Michael G. Kane, Alex Krasner, Richard Sita, Winston K. Chan, Mark F. Schutzer
-
Publication number: 20210125867Abstract: A system to manufacture a plurality of dies may include an etching tool, an electrically-conductive-adhesive-composition, a heat-applying-extraction-tool and a porous substrate cooperating with an evacuation component. The etching tool uses an ion beam that is configured to singulate a plurality of dies on a wafer with an ion etching process. The electrically-conductive-adhesive-composition is located between the wafer and a porous substrate carrying the wafer during the ion etching process. The electrically-conductive-adhesive-composition adheres the wafer to the porous substrate to keep the dies in place during the ion etching process. The electrically-conductive-adhesive-composition also aids in conducting electrons away from the wafer as a drain during the ion etching process.Type: ApplicationFiled: March 27, 2018Publication date: April 29, 2021Inventors: Winston K. Chan, Joey J. Michalchuk
-
Publication number: 20200343081Abstract: The disclosure includes an outer electrode and an inner electrode. The outer electrode defines an inner volume and is configured to receive injected electrons through at least one aperture. The inner electrode positioned in the inner volume. The outer electrode and inner electrode are configured to confine the received electrons in orbits around the inner electrode in response to an electric potential between the outer electrode and the inner electrode. The apparatus does not include a component configured to generate an electron-confining magnetic field.Type: ApplicationFiled: July 11, 2018Publication date: October 29, 2020Inventors: Sterling Eduardo McBride, Joey J. Michalchuk, Christopher E. Holland, Ashish Chaudhary, Winston K. Chan
-
Patent number: 10541090Abstract: The invention pertains to the field of electronic devices and the preparation thereof. In an aspect is an electronic device comprising a nanocomposite of carbon nanodomains homogeneously embedded in an insulating ceramic matrix, wherein the size and distribution of carbon nanodomains is such that the nanocomposite has a permittivity of greater than or equal to 200.Type: GrantFiled: September 6, 2015Date of Patent: January 21, 2020Assignee: SRI InternationalInventors: Yigal D Blum, Winston K. Chan, John W. Hodges, David K. Hui, Srinivasan Krishnamurthy, David Brent McQueen, Marc Rippen
-
Publication number: 20160005552Abstract: The invention pertains to the field of electronic devices and the preparation thereof. In an aspect is an electronic device comprising a nanocomposite of carbon nanodomains homogeneously embedded in an insulating ceramic matrix, wherein the size and distribution of carbon nanodomains is such that the nanocomposite has a permittivity of greater than or equal to 200.Type: ApplicationFiled: September 6, 2015Publication date: January 7, 2016Applicant: SRI INTERNATIONALInventors: Yigal D. Blum, Winston K. Chan, John W. Hodges, David K. Hui, Srinivasan Krishnamurthy, David Brent McQueen, Marc Rippen
-
Patent number: 7082249Abstract: An optical system including: a substrate having a recess; and, a substantially planar, semiconductor waveguiding membrane suspended over the recess and having a thickness less than about 200 nm; wherein, the optical system supports a propagating optical mode having a majority of its energy external to the semiconductor waveguiding membrane.Type: GrantFiled: March 28, 2005Date of Patent: July 25, 2006Assignee: Sarnoff CorporationInventors: Ralph D. Whaley, Jr., Joseph H. Abeles, Martin H. Kwakernaak, Viktor B. Khalfin, Winston K. Chan, Haiyan An, Steven Lipp
-
Patent number: 6636666Abstract: The methods and apparatus according to the invention equalize the power of at least one frequency in a multi-wavelength optical signal, or limit the power contained in a single or multi-frequency signal. More particularly, the optical power equalizer according to the invention is a filter with separably variable wavelength dependent transmission coefficients, wherein each coefficient decreases with increasing power for each respective wavelength coupled to the equalizer. Thus, the highest power wavelength output from an EDFA will be filtered more than the lower power wavelengths, making the output power from the EDFA more evenly distributed among the wavelengths. Such an equalizer can be placed downstream from each EDFA without destabilizing the optical network so that no changes need to be made to the EDFA or to the other components in the system.Type: GrantFiled: May 14, 2001Date of Patent: October 21, 2003Assignee: University of Iowa Research FoundationInventors: Winston K. Chan, David R. Andersen
-
Patent number: 6624510Abstract: An electrode array includes a flexible substrate, and a plurality of electrodes disposed on the flexible substrate. The flexible substrate is preferably formed of polyimide. The contacts preferably have a diameter in the range of approximately 10 &mgr;m to 1 mm. The an electrode array is manufactured by forming a plurality of electrodes on a flexible substrate by forming a metal line on the flexible substrate for each of the plurality of electrodes by depositing one or more metals using electron beam evaporation and then patterning the one or more metals and forming a contact on the flexible substrate for each of the plurality of electrodes using one of electroplating and embossing, and then forming an insulating film on the flexible substrate except over the contacts and areas of the electrodes utilized for connections to an electrical device.Type: GrantFiled: September 28, 2000Date of Patent: September 23, 2003Assignee: University of Iowa Research FoundationInventors: Winston K. Chan, Chris Coretsopoulos, Matthew A. Howard, III
-
Publication number: 20020181867Abstract: The methods and apparatus according to the invention equalize the power of at least one frequency in a multi-wavelength optical signal, or limit the power contained in a single or multi-frequency signal. More particularly, the optical power equalizer according to the invention is a filter with separably variable wavelength dependent transmission coefficients, wherein each coefficient decreases with increasing power for each respective wavelength coupled to the equalizer. Thus, the highest power wavelength output from an EDFA will be filtered more than the lower power wavelengths, making the output power from the EDFA more evenly distributed among the wavelengths. Such an equalizer can be placed downstream from each EDFA without destabilizing the optical network so that no changes need to be made to the EDFA or to the other components in the system.Type: ApplicationFiled: May 14, 2001Publication date: December 5, 2002Inventors: Winston K. Chan, David R. Andersen