Patents by Inventor Wolfgang Fichtner

Wolfgang Fichtner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for enhancing the yield in semiconductor manufacturing
    Patent number: 10018996
    Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: July 10, 2018
    Assignee: Synopsys, Inc.
    Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
  • Method and system for enhancing the yield in semiconductor manufacturing
    Patent number: 8090464
    Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: January 3, 2012
    Assignee: Synopsys, Inc.
    Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
  • Method and system for enhancing the yield in semiconductor manufacturing
    Patent number: 7792595
    Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
    Type: Grant
    Filed: May 27, 2005
    Date of Patent: September 7, 2010
    Assignee: Synopsys, Inc.
    Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
  • Method and System for Enhancing the Yield In Semiconductor Manufacturing
    Publication number: 20100121474
    Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
    Type: Application
    Filed: January 22, 2010
    Publication date: May 13, 2010
    Applicant: Synopsys, Inc.
    Inventors: Lars Bomholt, Jim Chalmers, Wolfgang Fichtner
  • METHOD AND SYSTEM FOR ENHANCING THE YIELD IN SEMICONDUCTOR MANUFACTURING
    Publication number: 20090005894
    Abstract: Roughly described, a manufacturing process is enhanced by using TCAD and TCAD-derived models. A TCAD simulation model of the process is developed, which predicts, in dependence upon a plurality of process input parameters, a value for a performance parameter of a product to be manufactured using the process. Estimated, predicted or desired values for a calculated subset of the parameters (including either process input parameters or product performance parameters or both), are determined in dependence upon the process model, and further in dependence upon actual, estimated or desired values for a different subset of the parameters (again either process input parameters or product performance parameters or both). The determination is preferably made using a process compact model of the process, itself developed in dependence upon the simulation model.
    Type: Application
    Filed: September 10, 2008
    Publication date: January 1, 2009
    Applicant: Synopsys, Inc.
    Inventors: Lars BOMHOLT, Jim Chalmers, Wolfgang Fichtner
  • Semiconductor device and control method thereof
    Patent number: 6534998
    Abstract: Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations and the like, thereby improving reliability, and a method for controlling the semiconductor device.
    Type: Grant
    Filed: November 21, 2000
    Date of Patent: March 18, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Omura, Wolfgang Fichtner, Hiromichi Ohashi, Tsuneo Ogura, Hideaki Ninomiya
  • Semiconductor device and control method thereof
    Patent number: 6153896
    Abstract: Disclosed is a semiconductor device capable of stabilizing a gate voltage at high voltage and high current, protecting the device from breakdown by preventing current nonuniformity and oscillations and the like, thereby improving reliability, and a method for controlling the semiconductor device.
    Type: Grant
    Filed: March 13, 1998
    Date of Patent: November 28, 2000
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Ichiro Omura, Wolfgang Fichtner, Hiromichi Ohashi, Tsuneo Ogura, Hideaki Ninomiya