Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Abstract: Embodiments relate to magnetoresistive (MR) sensors, sensor elements and structures, and methods. In particular, embodiments relate to MR, such as giant MR (GMR) or tunneling MR (TMR), spin valve layer systems and related sensors having improved stability. Embodiments include at least one of a multi-layer pinned layer or a multi-layer reference layer, making the stack more stable and therefore suitable for use at higher temperatures and magnetic fields than conventional systems and sensors.

Abstract: A magnetoresistive device includes a carrier, an xMR-sensor, a magnetic layer formed above an active xMR-region of the xMR-sensor and an insulating layer arranged between the xMR-sensor and the magnetic layer.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract: An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. The magnetic material is magnetically coupled to the first magneto-resistive sensing element.

Abstract: Embodiments relate to xMR sensors, including giant magnetoresistive (GMR), tunneling magnetoresistive (TMR) or anisotropic magnetoresistive (AMR), and the configuration of xMR strips within xMR sensors. In an embodiment, an xMR strip includes a plurality of differently sized and/or differently oriented serially connected portions. In another embodiment, an xMR strip includes a varying width or other characteristic. Such configurations can address discontinuities associated with conventional xMR sensors and improve xMR sensor performance.

Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Abstract: A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

Abstract: Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resistivity of the magnetoresistive portion vary according to a proximity of the magnetic portion.

Abstract: A magnetic encoder element for use in a position measurement system including a magnetic field sensor for measuring position along a first direction is disclosed. The encoder element includes at least one first track that includes a material providing a magnetic pattern along the first direction, the magnetic pattern being formed by a remanent magnetization vector that has a variable magnitude dependent on a position along the first direction. The gradient of the remanent magnetization vector is such that a resulting magnetic field in a corridor above the first track and at a predefined distance above the plane includes a field component perpendicular to the first direction that does not change its sign along the first direction.

Abstract: A method (and structure) of thermally treating a magnetic layer of a wafer, includes annealing, for a predetermined short duration, a magnetic layer of a single wafer.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract: Micro-electromechanical system (MEMS) devices and methods of manufacture thereof are disclosed. In one embodiment, a MEMS device includes a first semiconductive material and at least one trench disposed in the first semiconductive material, the at least one trench having a sidewall. An insulating material layer is disposed over an upper portion of the sidewall of the at least one trench in the first semiconductive material and over a portion of a top surface of the first semiconductive material proximate the sidewall. A second semiconductive material or a conductive material is disposed within the at least one trench and at least over the insulating material layer disposed over the portion of the top surface of the first semiconductive material proximate the sidewall.

Abstract: A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a ferromagnetic free layer structure physically coupled to the crystalline ferromagnetic structure.

Abstract: According to one embodiment of the present invention, a memory cell array comprises a plurality of voids, the spatial positions and dimensions of the voids being chosen such that mechanical stress occurring within the memory cell array is at least partly compensated by the voids.

Abstract: According to an embodiment, an integrated circuit includes a magneto-resistive memory cell. The magneto-resistive memory cell includes: a first ferromagnetic layer; a second ferromagnetic layer; and a nonmagnetic layer being disposed between the first ferromagnetic layer and the second ferromagnetic layer. The integrated circuit further includes a programming circuit configured to route a programming current through the magneto-resistive memory cell, wherein the programming current programs the magnetizations of the first ferromagnetic layer and of the second ferromagnetic layer by spin induced switching effects.

Abstract: An integrated circuit including a first magneto-resistive sensing element, magnetic material and a spacer. The magnetic material is situated laterally to the first magneto-resistive sensing element. The spacer is situated between the first magneto-resistive sensing element and the magnetic material. The magnetic material is magnetically coupled to the first magneto-resistive sensing element.

Abstract: Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resistivity of the magnetoresistive portion vary according to a proximity of the magnetic portion.

Abstract: A modulator includes a micro-electromechanical resonator device configured to receive an input signal and generate two output signals in response thereto, wherein the two signals having a predetermined phase relationship therebetween. The modulator further includes a switching system configured to selectively pass one of the two signals to an output of the modulator in an alternating fashion in response to phase modulation data.