Abstract: A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.

Abstract: A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, —generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.

Abstract: A method for producing silicon-based anodes for secondary batteries carries out the following steps for producing an anode: —depositing a silicon layer on a metal substrate having grain boundaries, wherein the silicon layer has a first boundary surface directed towards the metal substrate, —heating the metal substrate using a heating unit to a temperature between 200° C. and 1000° C., —conditioning the region of the second boundary surface of the silicon layer that is facing away from the metal substrate using an energy-intensive irradiation during the heating, —generating polyphases in the region of the silicon layer and the metal substrate, made up of amorphous silicon and/or crystalline silicon of the silicon of the silicon layer and of crystalline metal of the metal substrate and of silicide and—generating crystalline metal of the metal substrate.

Abstract: An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure.

Abstract: An apparatus for determining the temperature of a substrate, in particular of a semiconductor wafer during a heating thereof by means of a first radiation source is described. Furthermore, an apparatus and a method for thermally treating substrates are described, in which the substrate is heated by means of at least one first radiation source. The apparatus comprises a first grating structure having grating lines, which are opaque with respect to a substantial portion of the radiation of the first radiation source, wherein the grating structure is arranged between the first radiation source and the substrate, and a drive unit for moving the first grating structure.

Abstract: The invention relates to a method for producing a microelectronic semiconductor component, especially made of silicon carbide. According to said method doped areas are produced in the semiconductor by ion implantation and radiation damage in the semiconductor is then eliminated by irradiation with electromagnetic rays. The semiconductor is exposed across substantially its entire surface to pulse-like optical radiation and heated at least in the doped area.

Abstract: The invention relates to the production of semiconductor elements made of diamond, diamond layers and diamond-like layers, which are doped using the ion implantation method and on which N-type conductive areas are also placed. According to the invention, silicium at a concentration of more than 0.1 atom % is implanted in the lateral and depth areas to be doped, in addition to the elements of the fifth main group known per se which are used in doping. The silicium can be implanted before or after the elements of the fifth main group are applied to the diamond substrate or in a step comprising both. When silicium is implanted after the ions of the elements of the fifth main group, regeneration can be carried out after each implantation or after the second implantation.