Abstract: A bulk-acoustic wave filter device includes: a substrate; a resonance portion in which a cavity is disposed between the substrate and the resonance portion; and a cap configured to form an internal space together with the substrate, wherein filling gas including at least one of hydrogen gas and helium gas is filled in at least one of the cavity and the internal space formed by the substrate and the cap.

Abstract: A filter includes a first chip having first frequency characteristics, a second chip having second frequency characteristics different from the first frequency characteristics, a first series portion and a second series portion connected in series between an input terminal and an output terminal, and each including at least one resonator, a first shunt portion disposed on the first chip and connected between a first node and a ground and a second shunt portion disposed on the second chip and connected between a second node and the ground, the first and second nodes being disposed between the input terminal and the output terminal, the first shunt portion and the second shunt portion each including at least one resonator, and a shunt trimming inductor connected to the first shunt portion in series.

Abstract: A front end module includes an antenna terminal connected to an antenna, a first filter having a first end connected to the antenna terminal and having a first pass band; and a second filter having a first end connected to the antenna terminal and having a second pass band different from the first pass band. The first filter and the second filter simultaneously filter an RF signal received by the antenna, and simultaneously filter an RF signal transmitted externally through the antenna. The first filter and the second filter are configured to support wireless communications of a same standard.

Abstract: An acoustic resonator includes: an upper electrode including a first active region disposed on an upper portion of a piezoelectric layer, and a first extended region extended from the first active region; a lower electrode including a second active region disposed on a lower portion of the piezoelectric layer, and a second extended region extended from the second active region; a first metal layer including a first resistance reduction region disposed on the first extended region; and a second metal layer including a second resistance reduction region disposed on the second extended region. The first metal layer includes a first conductive link region extended from the first resistance reduction region. The second metal layer includes a second conductive link region extended from the second resistance reduction region. The first and second conductive link regions correspond to respective portions of a side boundary of the first and second active regions.

Abstract: A filter includes: a series part disposed between a signal input terminal and a signal output terminal, and including at least one first bulk-acoustic resonator; an inductor portion including a first inductor disposed between ends of the series part and a second inductor having a first end connected to a connection node of the series part and the first inductor; and a shunt part disposed between a second end of the second inductor and a ground, and including at least one second bulk-acoustic resonator, wherein a resonant frequency of the at least one second bulk-acoustic resonator is higher than a resonant frequency of the at least one first bulk-acoustic resonator.

Abstract: An acoustic resonator includes: an upper electrode including a first active region disposed on an upper portion of a piezoelectric layer, and a first extended region extended from the first active region; a lower electrode including a second active region disposed on a lower portion of the piezoelectric layer, and a second extended region extended from the second active region; a first metal layer including a first resistance reduction region disposed on the first extended region; and a second metal layer including a second resistance reduction region disposed on the second extended region. The first metal layer includes a first conductive link region extended from the first resistance reduction region. The second metal layer includes a second conductive link region extended from the second resistance reduction region. The first and second conductive link regions correspond to respective portions of a side boundary of the first and second active regions.

Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.

Abstract: There are provided an acoustic resonator module, and a method of manufacturing the same. An acoustic resonator module includes a resonating part disposed on a substrate and an inductor electrically connected to the resonating part, and having at least a portion disposed to be spaced apart from the substrate.

Abstract: A front end module includes a filter portion including filters each including at least one bulk-acoustic wave resonator including a first electrode, a piezoelectric layer, and a second electrode stacked in order, and the filters each have a different allocated passband such that a frequency band of each passband overlaps a portion of a frequency band of an adjacent passband; and a switch portion to be selectively connected to the filters to form a path of a wireless frequency signal.

Abstract: A filter includes a multilayer structure having films configured as bulk acoustic wave resonators; a wiring line connected to the bulk acoustic wave resonators; a cap coupled to the multilayer structure on a bonding line; and the filtering characteristics of the filter being configured through a mutual inductance between the wiring line and the bonding line.

Abstract: An acoustic wave filter includes a substrate, a first resonator disposed on the substrate, a second resonator disposed on the substrate to be spaced apart from the first resonator, a connector electrically connecting the first and second resonators, and a variable capacitor formed in the connector to tune a pass band frequency of the acoustic wave filter.

Abstract: A filter includes: a series part disposed between a signal input terminal and a signal output terminal, and including at least one first bulk-acoustic resonator; an inductor portion including a first inductor disposed between ends of the series part and a second inductor having a first end connected to a connection node of the series part and the first inductor; and a shunt part disposed between a second end of the second inductor and a ground, and including at least one second bulk-acoustic resonator, wherein a resonant frequency of the at least one second bulk-acoustic resonator is higher than a resonant frequency of the at least one first bulk-acoustic resonator.

Abstract: An acoustic wave filter device includes resonance portions, first and second metal pads. The resonance portions each includes a lower electrode disposed on a substrate, a piezoelectric layer disposed on at least a portion of the lower electrode, and an upper electrode disposed on at least a portion of the piezoelectric layer. The first metal pads are connected to one of the upper electrode and the lower electrode of a corresponding resonance portion among the resonance portions. The second metal pads are disposed outwardly of an active region and connected to the other one of the upper electrode and the lower electrode of adjacent resonant portions among the resonance portions. A ring portion is disposed outwardly of the active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap is disposed only on a portion of any one of the first and second metal pads.

Abstract: A filter includes a multilayer structure comprising films and forming bulk acoustic wave resonators, a cap accommodating the bulk acoustic wave resonators and bonded to the multilayer structure, a bonding agent disposed in a bonded area between the multilayer structure and the cap and comprising a bonding layer, and a shielding layer disposed on an inner surface of the cap and comprising a same material as at least a portion of the bonding layer.

Abstract: A filter may include a plurality of bulk acoustic wave resonators including one or more series resonators and one or more shunt resonators formed by a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate, a cap accommodating the plurality of bulk acoustic wave resonators therein, and one or more switches provided on the cap.

Abstract: A filter may include one or more series unit, and a shunt unit disposed between the one or more series unit and ground. The one or more series unit includes a plurality of series resonators which are selectively operated, and each of the plurality of series resonators includes a film bulk acoustic resonator.

Abstract: A filter includes: series resonators connected to each other in series; shunt resonators connected to first nodes between some of the series resonators; and a variable capacitor connected to a second node between some of the series resonators, and forming a pole configured to suppress harmonics.

Abstract: An acoustic wave filter includes a substrate having voids formed therein; a first resonator disposed on one or more of the voids, and a second resonator disposed on other of the voids. A first trimming layer is provided in the first resonator, and a second trimming layer is provided in the second resonator. The second trimming layer is formed of a material having an etching rate for a given etchant different from that of the first trimming layer.

Abstract: A filter includes: series resonators connected to each other in series; shunt resonators connected to first nodes between some of the series resonators; and a variable capacitor connected to a second node between some of the series resonators, and forming a pole configured to suppress harmonics.

Abstract: A filter may include one or more series unit, and a shunt unit disposed between the one or more series unit and ground. The one or more series unit includes a plurality of series resonators which are selectively operated, and each of the plurality of series resonators includes a film bulk acoustic resonator.