Abstract: A semiconductor package includes: a buffer die; memory dies on the buffer die; a bonding layer between the memory dies; and a molding member disposed on the buffer die and the memory dies, wherein each of the memory dies includes: a first substrate having first and second surfaces; a first conductive pad and a first conductive connection member stacked on the first substrate; and a second conductive pad disposed on the first substrate, wherein the second conductive pad of a first memory die of the memory dies contacts the first conductive connection member of a second memory die of the memory dies. The first memory die is disposed under the second memory die. The first conductive pad includes a first conductive pattern and a second conductive pattern. The second conductive pad includes a third conductive pattern and a fourth conductive pattern. The fourth conductive pattern contacts the third conductive pattern.

Abstract: A package substrate includes an insulating layer having a mounting surface; a wiring pattern extending in the insulating layer; and a chip bonding pad provided on the mounting surface of the insulating layer and connected to the wiring pattern, the chip bonding pad having a tapered shape in which a horizontal cross-sectional area thereof gradually decreases away from the mounting surface of the insulating layer in a vertical direction. A portion of the chip bonding pad closest to the mounting surface of the insulating layer has a horizontal length of about 20 micrometers (?m) to about 30 ?m.

Abstract: The reliability of stacked semiconductor packages may be improved via a semiconductor package including a first semiconductor chip including through silicon vias (TSVs) with respective upper conductive pads electrically connected to the TSVs, a second semiconductor chip on the first semiconductor chip with lower conductive pads on a lower surface of the second semiconductor chip, conductive bumps between the upper conductive pads and the lower conductive pads, and an interlayer adhesive layer between the first semiconductor chip and the second semiconductor chip. An interlayer space is between the first semiconductor chip and the second semiconductor chip and overlaps the first semiconductor chip and the second semiconductor chip in a vertical direction. The encapsulant extends into the interlayer space.

Abstract: Disclosed are semiconductor devices and their fabrication methods. The semiconductor device comprises a pad on a semiconductor chip, a protective layer on the semiconductor chip and having an opening that exposes a portion of a top surface of the pad, and a bump structure electrically connected to the pad. The bump structure includes a metal layer on the pad and a solder ball on the metal layer. A first width of the metal layer is about 0.85 times to about 0.95 times a second width of the opening.

Abstract: Disclosed is a semiconductor device comprising a substrate including a first surface and a second surface that are opposite to each other, a via structure that penetrates the substrate, a first passivation pattern disposed on the first surface of the substrate and extending onto an upper sidewall of the via structure, and a second passivation pattern disposed on the first passivation pattern and exposing an uppermost surface of the first passivation pattern. At least a portion of the second passivation pattern is externally exposed. The first passivation pattern includes at least one selected from oxide and silicon oxide. The second passivation pattern includes at least one selected from nitride and silicon nitride.

Abstract: A package substrate includes an insulating layer having a mounting surface; a wiring pattern extending in the insulating layer; and a chip bonding pad provided on the mounting surface of the insulating layer and connected to the wiring pattern, the chip bonding pad having a tapered shape in which a horizontal cross-sectional area thereof gradually decreases away from the mounting surface of the insulating layer in a vertical direction. A portion of the chip bonding pad closest to the mounting surface of the insulating layer has a horizontal length of about 20 micrometers (?m) to about 30 ?m.