Abstract: In accordance with an exemplary embodiment of the present invention, provided is an apparatus for processing substrate, the apparatus comprising: a chamber providing a process space formed therein; a susceptor on which a substrate is placed, the susceptor being installed in the process space; a gas supply port formed in the central portion of the ceiling of the chamber to supply a source gas to the process space; an exhaust port formed on a side wall of the chamber to be positioned outside and below the susceptor, the exhaust port exhausting a gas in the process space in the direction from a center of the susceptor toward an edge of the susceptor; and an antenna positioned above the susceptor and installed outside the chamber to generate plasma from the source gas, an upper surface of the susceptor comprises a seating surface on which the substrate is placed during the process and a control surface which is located on the periphery of the seating surface and faces the process space to be exposed to the plasma

Abstract: According to an embodiment of the present invention, an apparatus for processing substrate comprising: a susceptor; and a cover unit installed on an upper part of the susceptor, the substrate is placed on the cover unit, wherein the cover unit comprises: a cover frame having one or more air gaps; and one or more covers having a shape corresponding to each of the air gaps and mountable in each of the air gaps, wherein a depth of the air gap is at least three times the thickness of the substrate.

Abstract: In accordance with an exemplary embodiment of the present invention, provided is an apparatus for processing substrate, the apparatus comprising: a chamber providing a process space formed therein; a susceptor on which a substrate is placed, the susceptor being installed in the process space; a gas supply port formed in the central portion of the ceiling of the chamber to supply a source gas to the process space; an exhaust port formed on a side wall of the chamber to be positioned outside and below the susceptor, the exhaust port exhausting a gas in the process space in the direction from a center of the susceptor toward an edge of the susceptor; and an antenna positioned above the susceptor and installed outside the chamber to generate plasma from the source gas, an upper surface of the susceptor comprises a seating surface on which the substrate is placed during the process and a control surface which is located on the periphery of the seating surface and faces the process space to be exposed to the plasma

Abstract: According to an embodiment of the present invention, a method for forming a thin film includes loading an object to be processed into a chamber, and while controlling the temperature of the object to be processed to be 400° C. or less, supplying an Si source gas and an oxidizing gas into the chamber to form a silicon oxide film on the surface of the object to be processed, wherein the oxidizing gas is heated to a temperature exceeding 400° C. before being supplied into the chamber.

Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube having an inner space, a substrate support on which a plurality of substrates are stacked in multistage within the tube, the substrate support individually defining a plurality of processing spaces in which the plurality of substrates are respectively processed, a first gas supply part configured to supply a first gas into all the plurality of processing spaces, a second gas supply part comprising a plurality of injectors disposed to respectively correspond to the plurality of processing spaces so that the second gas is individually supplied onto each of the plurality of substrates, and an exhaust part configured to exhaust the gases within the tube. Thus, the gas may be individually supplied into each of the processing spaces in which the plurality of substrates are respectively processed.

Abstract: Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700° C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700° C.

Abstract: Provided is a substrate processing apparatus, and more particularly, a batch-type substrate processing apparatus where processes can be performed independently on a plurality of substrates. The substrate processing apparatus includes a substrate boat including a plurality of partition plates and a plurality of connection rods, an internal reaction tube, a gas supply unit, and an exhaust unit, and a plurality of substrates are loaded to be separated from the partition plates.

Abstract: A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a first tube defining an inner space, a substrate holder in which a plurality of substrates are vertically stacked in the inner space of the first tube, the substrate holder defining a plurality of processing spaces in which the substrates are individually processed, a gas supply unit having a plurality of main injection holes each of which is vertically defined to correspond to each of the processing spaces to supply a gas into the first tube, and an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside. The exhaust unit includes a plurality of exhaust holes facing the main injection holes and vertically arranged in a line to correspond to the processing spaces. Therefore, the gas may smoothly flow on the substrate.

Abstract: Disclosed is a substrate processing apparatus comprising: a chamber which provides a substrate processing space; a process gas supply line which is for supplying a process gas into the chamber; a first diffusion plate which has formed on an edge portion thereof an injection hole for injecting the process gas; a substrate support which faces the first diffusion plate and is for supporting a substrate; a second diffusion plate which is provided between the first diffusion plate and the substrate support and has formed thereon a plurality of distribution holes; and a plasma generation unit which is for forming plasma in the space between the first diffusion plate and the second diffusion plate.

Abstract: According to an embodiment of the present invention, provided is a method for forming an amorphous thin film, the method comprising: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber including a first body part configured to provide a space in which substrates stand by and a second body part configured to provide a space in which a thin film deposition process is performed on each of the substrates, a substrate holder on which the substrates are stacked, the substrate holder being movable between the first body part and the second body part, a first supply unit configured to supply a first gas for depositing a thin film on the substrate in the second body part, a second supply unit configured to supply a second gas, which reacts with by-products generated while the thin film is deposited to generate fume, into the first body part, and an exhaust unit configured to exhaust the gases within the chamber. Thus, by-products generated while the thin film is deposited may be quickly removed.

Abstract: The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a first tube defining an inner space, a substrate holder in which a plurality of substrates are vertically stacked in the inner space of the first tube, the substrate holder defining a plurality of processing spaces in which the substrates are individually processed, a gas supply unit having a plurality of main injection holes each of which is vertically defined to correspond to each of the processing spaces to supply a gas into the first tube, and an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside. The exhaust unit includes a plurality of exhaust holes facing the main injection holes and vertically arranged in a line to correspond to the processing spaces. Therefore, the gas may smoothly flow on the substrate.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube having an inner space, a substrate support on which a plurality of substrates are stacked in multistage within the tube, the substrate support individually defining a plurality of processing spaces in which the plurality of substrates are respectively processed, a first gas supply part configured to supply a first gas into all the plurality of processing spaces, a second gas supply part comprising a plurality of injectors disposed to respectively correspond to the plurality of processing spaces so that the second gas is individually supplied onto each of the plurality of substrates, and an exhaust part configured to exhaust the gases within the tube. Thus, the gas may be individually supplied into each of the processing spaces in which the plurality of substrates are respectively processed.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.