Patents by Inventor Xaver Schloegel

Xaver Schloegel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210036610
    Abstract: A method of manufacturing a power semiconductor system includes providing a power module having one or more power transistor dies and attaching an inductor module to the power module such that the inductor module is electrically connected to a node of the power module. The inductor module includes a substrate with a magnetic material and windings at one or more sides of the substrate. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.
    Type: Application
    Filed: October 20, 2020
    Publication date: February 4, 2021
    Inventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
  • Patent number: 10903133
    Abstract: A package encloses a power semiconductor die and has a package body with a top side, footprint side and sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; and a top layer arranged at the package top side and electrically connected with the second load terminal. A heat spreader is mounted onto the top layer with a bottom surface facing the top layer. The area of the top surface of the heat spreader is greater than the area of the bottom surface.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: January 26, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20210020539
    Abstract: A semiconductor package is disclosed. In one example, the semiconductor package includes a chip carrier, a semiconductor chip attached to the chip carrier, an encapsulation body encapsulating the semiconductor chip, and a mounting hole configured to receive a screw for screw mounting a heatsink onto a first side of the semiconductor package. A second side of the semiconductor package opposite the first side is configured to be surface mounted to an application board.
    Type: Application
    Filed: July 15, 2020
    Publication date: January 21, 2021
    Applicant: Infineon Technologies AG
    Inventors: Ralf Otremba, Teck Sim Lee, Klaus Schiess, Xaver Schloegel, Lee Shuang Wang, Mohd Hasrul Zulkifli
  • Patent number: 10886186
    Abstract: A semiconductor package system comprises a semiconductor package and a cap. The semiconductor package comprises a die pad, a chip mounted or arranged to a first main face of the die pad and an encapsulation body encapsulating the chip and the die pad. The cap covers at least partly an exposed second main face of the die pad. The cap comprises a cap body of an electrically insulating and thermally conductive material and a fastening system fastening the cap to the semiconductor package. The fastening system extends from the cap body towards the encapsulation body or along a side surface of the semiconductor package.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: January 5, 2021
    Assignee: Infineon Technologies AG
    Inventors: Thorsten Scharf, Ralf Otremba, Thomas Bemmerl, Irmgard Escher-Poeppel, Martin Gruber, Michael Juerss, Thorsten Meyer, Xaver Schloegel
  • Patent number: 10833583
    Abstract: A method of manufacturing a power semiconductor system includes providing a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board and attaching an inductor module to the power stage module such that the inductor module is electrically connected to an output node of the power stage module. The inductor module includes a ferrite sheet embedded in a second printed circuit board and windings patterned into the second printed circuit board. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: November 10, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
  • Publication number: 20200212798
    Abstract: A method of manufacturing a power semiconductor system includes providing a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board and attaching an inductor module to the power stage module such that the inductor module is electrically connected to an output node of the power stage module. The inductor module includes a ferrite sheet embedded in a second printed circuit board and windings patterned into the second printed circuit board. Further methods of manufacturing power semiconductor systems and methods of manufacturing inductor modules are also described.
    Type: Application
    Filed: March 6, 2020
    Publication date: July 2, 2020
    Inventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
  • Patent number: 10700037
    Abstract: In some examples, a device includes a semiconductor element, a layer element, and a single connector element electrically connecting the semiconductor element and the layer element. In some examples, the single connector element includes two or more discrete connector elements, and each discrete connector element of the two or more discrete connector elements electrically connects the semiconductor element and the layer element. In some examples, the single connector element also includes conductive material attached to the two or more discrete connector elements.
    Type: Grant
    Filed: November 13, 2017
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies AG
    Inventors: Eung San Cho, Thorsten Meyer, Xaver Schloegel, Thomas Behrens, Josef Hoeglauer
  • Patent number: 10699978
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals for blocking a blocking voltage. A lead frame structure electrically and mechanically couples the package to a support and includes an outside terminal extending out of the package footprint side and/or the sidewalls, and is electrically connected with the first load terminal. A top layer arranged at the package top side is electrically connected with the second load terminal. A creepage length between the electrical potential of the outside terminal and the electrical potential of the top layer is defined by a package body surface contour. The surface contour is formed at least by the package top side and package sidewall. At least one structural feature also forms the surface contour is configured to increase the creepage length.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: June 30, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Amirul Afiq Hud, Teck Sim Lee, Xaver Schloegel, Bernd Schmoelzer
  • Patent number: 10699987
    Abstract: A package encloses a power semiconductor die that has a first load terminal at a die frontside facing a footprint side of the package and a second load terminal arranged at a die backside facing a top side of the package. The package also includes a lead frame configured to electrically and mechanically couple the package to a support. The lead frame has a planar first outside terminal electrically connected with the first load terminal and a planar second outside terminal electrically connected with the second load terminal. The planar first outside terminal is configured to interface with the support by means of a first contact area. The planar second outside terminal is configured to interface with the support by means of a second contact area. The second contact area has a size in a range between 80% and 120% of a size of the first contact area.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: June 30, 2020
    Assignee: tInfineon Technologies Austria AG
    Inventors: Ralf Otremba, Chooi Mei Chong, Markus Dinkel, Josef Hoeglauer, Klaus Schiess, Xaver Schloegel
  • Publication number: 20200144150
    Abstract: A package encloses a power semiconductor die and has a package body with a top side, footprint side and sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; and a top layer arranged at the package top side and electrically connected with the second load terminal. A heat spreader is mounted onto the top layer with a bottom surface facing the top layer. The area of the top surface of the heat spreader is greater than the area of the bottom surface.
    Type: Application
    Filed: January 8, 2020
    Publication date: May 7, 2020
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Patent number: 10601314
    Abstract: A power semiconductor system includes a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board, and an inductor module attached to the power stage module and having an inductor electrically connected to an output node of the power stage module. The inductor is formed from a ferrite sheet embedded in a second printed circuit board and windings patterned into the second printed circuit board. Corresponding methods of manufacturing the power semiconductor system and the inductor module are also disclosed.
    Type: Grant
    Filed: September 8, 2017
    Date of Patent: March 24, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
  • Publication number: 20200083207
    Abstract: A method of manufacturing a semiconductor device includes mounting a first semiconductor power chip on a first carrier, mounting a second semiconductor power chip on a second carrier, bonding a contact clip to the first semiconductor power chip and to the second semiconductor power chip, and mounting a third semiconductor chip over the contact clip.
    Type: Application
    Filed: November 14, 2019
    Publication date: March 12, 2020
    Inventors: Ralf Otremba, Josef Hoeglauer, Xaver Schloegel, Chooi Mei Chong
  • Patent number: 10566260
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; a top layer arranged at the package top side and electrically connected with the second load terminal; and a heat spreader arranged external of the package body and in electrical contact with the top layer. A top surface of the heat spreader has an area greater than the area of the bottom surface.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: February 18, 2020
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20190304858
    Abstract: A semiconductor package system comprises a semiconductor package and a cap. The semiconductor package comprises a die pad, a chip mounted or arranged to a first main face of the die pad and an encapsulation body encapsulating the chip and the die pad. The cap covers at least partly an exposed second main face of the die pad. The cap comprises a cap body of an electrically insulating and thermally conductive material and a fastening system fastening the cap to the semiconductor package. The fastening system extends from the cap body towards the encapsulation body or along a side surface of the semiconductor package.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 3, 2019
    Applicant: Infineon Technologies AG
    Inventors: Thorsten Scharf, Ralf Otremba, Thomas Bemmerl, Irmgard Escher-Poeppel, Martin Gruber, Michael Juerss, Thorsten Meyer, Xaver Schloegel
  • Publication number: 20190148332
    Abstract: In some examples, a device includes a semiconductor element, a layer element, and a single connector element electrically connecting the semiconductor element and the layer element. In some examples, the single connector element includes two or more discrete connector elements, and each discrete connector element of the two or more discrete connector elements electrically connects the semiconductor element and the layer element. In some examples, the single connector element also includes conductive material attached to the two or more discrete connector elements.
    Type: Application
    Filed: November 13, 2017
    Publication date: May 16, 2019
    Applicant: Infineon Technologies Americas Corp.
    Inventors: Eung San Cho, Thorsten Meyer, Xaver Schloegel, Thomas Behrens, Josef Hoeglauer
  • Publication number: 20190080980
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals and blocks a blocking voltage between the load terminals. The package further includes: a lead frame structure for electrically and mechanically coupling the package to a support, the lead frame structure including an outside terminal extending out of the package footprint side and/or out of one of the package sidewalls and electrically connected with the first load terminal; a top layer arranged at the package top side and electrically connected with the second load terminal; and a heat spreader arranged external of the package body and in electrical contact with the top layer. A top surface of the heat spreader has an area greater than the area of the bottom surface.
    Type: Application
    Filed: September 7, 2018
    Publication date: March 14, 2019
    Inventors: Ralf Otremba, Markus Dinkel, Ulrich Froehler, Josef Hoeglauer, Uwe Kirchner, Guenther Lohmann, Klaus Schiess, Xaver Schloegel
  • Publication number: 20190081562
    Abstract: A power semiconductor system includes a power stage module having one or more power transistor dies attached to or embedded in a first printed circuit board, and an inductor module attached to the power stage module and having an inductor electrically connected to an output node of the power stage module. The inductor is formed from a ferrite sheet embedded in a second printed circuit board and windings patterned into the second printed circuit board. Corresponding methods of manufacturing the power semiconductor system and the inductor module are also disclosed.
    Type: Application
    Filed: September 8, 2017
    Publication date: March 14, 2019
    Inventors: Petteri Palm, Frank Daeche, Zeeshan Umar, Andrew Sawle, Maciej Wojnowski, Xaver Schloegel, Josef Hoeglauer
  • Publication number: 20190080973
    Abstract: A package encloses a power semiconductor die and has a package body with a package top side, package footprint side and package sidewalls. The die has first and second load terminals for blocking a blocking voltage. A lead frame structure electrically and mechanically couples the package to a support and includes an outside terminal extending out of the package footprint side and/or the sidewalls, and is electrically connected with the first load terminal. A top layer arranged at the package top side is electrically connected with the second load terminal. A creepage length between the electrical potential of the outside terminal and the electrical potential of the top layer is defined by a package body surface contour. The surface contour is formed at least by the package top side and package sidewall. At least one structural feature also forms the surface contour is configured to increase the creepage length.
    Type: Application
    Filed: September 7, 2018
    Publication date: March 14, 2019
    Inventors: Ralf Otremba, Amirul Afiq Hud, Teck Sim Lee, Xaver Schloegel, Bernd Schmoelzer
  • Patent number: 10204845
    Abstract: A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.
    Type: Grant
    Filed: August 28, 2017
    Date of Patent: February 12, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Amirul Afiq Hud, Chooi Mei Chong, Josef Hoeglauer, Klaus Schiess, Lee Shuang Wang, Matthias Strassburg, Teck Sim Lee, Xaver Schloegel
  • Patent number: 10109609
    Abstract: A connection structure is provided that includes a semiconductor substrate, a first layer arranged on the semiconductor substrate, the first layer being configured to provide shielding against radioactive rays, a second layer arranged on the first layer, the second layer including solder including Pb, and an electrically conductive member arranged on the second layer.
    Type: Grant
    Filed: January 13, 2014
    Date of Patent: October 23, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Ralf Otremba, Josef Höglauer, Jürgen Schredl, Xaver Schlögel, Klaus Schiess