Abstract: A micro-nano structure formed by self-assembling a compound represented by formula (I), an isomer thereof, a pharmaceutically acceptable salt, a hydrate or a solvate in an aqueous solution, a preparation method for the micro-nano structure, and use thereof are described. The micro-nano structure has the advantages of having high photothermal conversion efficiency, good photothermal stability, good photothermal effect and photodynamic effect, being easily degraded, and having high safety, and can be passively targeted to tumor sites, having a broad prospect in the diagnosis and treatment of cancers and skin diseases.

Abstract: A heat transfer tube includes a twisted baffle arranged in an inner wall of the tube. The twisted baffle extends spirally along an axial direction of the heat transfer tube. The twisted baffle is provided with a non-through gap extending along an axial direction of the heat transfer tube from an end to the other end of the twisted baffle. A cracking furnace uses the heat transfer tube. The heat transfer tube and cracking furnace have good heat transfer effects and small pressure loss.

Abstract: The present disclosure relates to a heat transfer tube and a racking furnace using the heat transfer tube. The heat transfer tube comprises a twisted baffle arranged in an inner wall of the tube, said twisted baffle extending spirally along an axial direction of the heat transfer tube. The twisted baffle is provided with a non-through gap extending along an axial direction of the heat transfer tube from an end to the other end of the twisted baffle. The heat transfer tube and cracking furnace according to the present disclosure have good heat transfer effects and small pressure loss.

Abstract: A heat transfer tube includes a twisted baffle arranged in an inner wall of the tube. The twisted baffle extends spirally along an axial direction of the heat transfer tube. The twisted baffle is provided with a non-through gap extending along an axial direction of the heat transfer tube from an end to the other end of the twisted baffle. A cracking furnace uses the heat transfer tube. The heat transfer tube and cracking furnace have good heat transfer effects and small pressure loss.

Abstract: An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such that it completely fills the smaller isolation trench and lines the larger isolation trench. The nitride layer is etched back to form a recess in the nitride layer in the smaller isolation trench while at least a portion of the nitride layer lining the larger isolation trench is completely removed. A layer of HDP oxide is deposited over the substrate, completely filling the smaller and larger isolation trenches. The HDP oxide layer is planarized to the upper surface of the substrate. The deeper larger isolation trench may be formed by performing an etching step after the nitride layer has been etched back, prior to depositing HDP oxide.

Abstract: The present disclosure provides a steam cracking process, comprising heating a liquid feed stock in a convection section of a cracking furnace and subsequently conveying the material to a radiant section of the cracking furnace for cracking reaction therein, wherein a monoolefin-containing stream is conveyed to the cracking furnace for cracking reaction through at least one of modes A to C.

Abstract: A hybrid bioactive glass comprising a plurality of POSS-cages each having at least one flexible arm radiating from an Si atom of the POSS-cage, each POSS-cage being covalently linked to another POSS-cage through an Si—O—Si linkage between two flexible arms. A method of forming a hybrid bioactive glass comprising the steps of providing a plurality of POSS-cages, each having at least one reactive flexible arm radiating from an Si atom detailed by —X—Si[R1,R2,R3], wherein X is an arm extension located between the Si—O—Si linkage and an Si atom of the POSS-cage, wherein R1, R2 and R3 are also the same or different, and at least one of the R1, R2 and R3 is an alkoxide, and reacting the plurality of POSS-cages through a sol-gel method to form a covalently-linked network and incorporating Ca+2 ions therein, the sol-gel process comprising hydrolysis and polycondensation reactions of the plurality of POSS-cages.

Abstract: An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such that it completely fills the smaller isolation trench and lines the larger isolation trench. The nitride layer is etched back to form a recess in the nitride layer in the smaller isolation trench while at least a portion of the nitride layer lining the larger isolation trench is completely removed. A layer of HDP oxide is deposited over the substrate, completely filling the smaller and larger isolation trenches. The HDP oxide layer is planarized to the upper surface of the substrate. The deeper larger isolation trench may be formed by performing an etching step after the nitride layer has been etched back, prior to depositing HDP oxide.

Abstract: The present disclosure relates to a heat transfer tube and a cracking furnace using the heat transfer tube. The heat transfer tube comprises a twisted baffle arranged in an inner wall of the tube, said twisted baffle extending spirally along an axial direction of the heat transfer tube. The twisted baffle defines a closed circle viewed from an end of the heat transfer tube. Along the trajectory of the circle a casing is arranged, which is fixedly connected to a radial inner end of the twisted baffle. The twisted baffle is provided with a plurality of holes. The heat transfer tube according to the present disclosure has a good heat transfer effect and small pressure loss.

Abstract: An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such that it completely fills the smaller isolation trench and lines the larger isolation trench. The nitride layer is etched back to form a recess in the nitride layer in the smaller isolation trench while at least a portion of the nitride layer lining the larger isolation trench is completely removed. A layer of HDP oxide is deposited over the substrate, completely filling the smaller and larger isolation trenches. The HDP oxide layer is planarized to the upper surface of the substrate. The deeper larger isolation trench may be formed by performing an etching step after the nitride layer has been etched back, prior to depositing HDP oxide.

Abstract: This disclosure relates generally to potassium ion sensors and monomers derived from such sensors. The disclosure also provides for polymers (e.g., random copolymers, nanoparticles, polymer thin films, and sensors) having polymerized monomeric potassium ion sensors as described herein. These compounds and polymers are useful for measuring intracellular and extracellular potassium ion concentrations.

Abstract: A hybrid bioactive glass comprising a plurality of POSS-cages each having at least one flexible arm radiating from an Si atom of the POSS-cage, each POSS-cage being covalently linked to another POSS-cage through an Si—O—Si linkage between two flexible arms. A method of forming a hybrid bioactive glass comprising the steps of providing a plurality of POSS-cages, each having at least one reactive flexible arm radiating from an Si atom detailed by —X—Si[R1,2,R3], wherein X is an arm extension located between the Si—O—Si linkage and an Si atom of the POSS-cage, wherein R1, R2 and R3 are also the same or different, and at least one of the R1, R2 and R3 is an alkoxide, and reacting the plurality of POSS-cages through a sol-gel method to form a covalently-linked network and incorporating Ca+2 ions therein, the sol-gel process comprising hydrolysis and polycondensation reactions of the plurality of POSS-cages.

Abstract: An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such that it completely fills the smaller isolation trench and lines the larger isolation trench. The nitride layer is etched back to form a recess in the nitride layer in the smaller isolation trench while at least a portion of the nitride layer lining the larger isolation trench is completely removed. A layer of HDP oxide is deposited over the substrate, completely filling the smaller and larger isolation trenches. The HDP oxide layer is planarized to the upper surface of the substrate. The deeper larger isolation trench may be formed by performing an etching step after the nitride layer has been etched back, prior to depositing HDP oxide.

Abstract: The present disclosure relates to a heat transfer tube and a racking furnace using the heat transfer tube. The heat transfer tube comprises a twisted baffle arranged in an inner wall of the tube, said twisted baffle extending spirally along an axial direction of the heat transfer tube. The twisted baffle is provided with a non-through gap extending along an axial direction of the heat transfer tube from an end to the other end of the twisted baffle. The heat transfer tube and cracking furnace according to the present disclosure have good heat transfer effects and small pressure loss.

Abstract: An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such that it completely fills the smaller isolation trench and lines the larger isolation trench. The nitride layer is etched back to form a recess in the nitride layer in the smaller isolation trench while at least a portion of the nitride layer lining the larger isolation trench is completely removed. A layer of HDP oxide is deposited over the substrate, completely filling the smaller and larger isolation trenches. The HDP oxide layer is planarized to the upper surface of the substrate. The deeper larger isolation trench may be formed by performing an etching step after the nitride layer has been etched back, prior to depositing HDP oxide.

Abstract: This disclosure relates generally to potassium ion sensors and monomers derived from such sensors. The disclosure also provides for polymers (e.g., random copolymers, nanoparticles, polymer thin films, and sensors) having polymerized monomeric potassium ion sensors as described herein. These compounds and polymers are useful for measuring intracellular and extracellular potassium ion concentrations.

Abstract: The present disclosure relates to a heat transfer tube and a racking furnace using the heat transfer tube. The heat transfer tube comprises a twisted baffle arranged in an inner wall of the tube, said twisted baffle extending spirally along an axial direction of the heat transfer tube. The twisted baffle defines a closed circle viewed from an end of the heat transfer tube. Along the trajectory of the circle a casing is arranged, which is fixedly connected to a radial inner end of the twisted baffle. The twisted baffle is provided with a plurality of holes. The heat transfer tube according to the present disclosure has a good heat transfer effect and small pressure loss.

Abstract: This invention relates to a tubular cracking furnace, especially an ethylene cracking furnace, which comprises a convection section and a or dual radiant section(s), at least one heat transfer intensifying member arranged in at least one pass each radiant tube in said radiant section, said at least one heat transfer intensifying member comprises a first heat transfer intensifying member, which is arranged at a location between 10D and 25D upstream of the extreme point of said at least one pass radiant tube metal temperature, wherein D is the inner diameter of the radiant tube having heat transfer intensifying members. The present invention could achieve the best enhanced heat transfer result with given number of heat transfer intensifying member, by optimizing the locations of heat transfer intensifying members in the radiant tube.

Abstract: An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide thicknesses may be used for lower voltage transistors, memory array transistors, and higher voltage transistors.

Abstract: An integrated circuit and gate oxide forming process are disclosed which provide a gate structure that is simple to integrate with conventional fabrication processes while providing different gate oxide thicknesses for different transistors within the integrated circuit. For a flash memory, which may utilize the invention, the different gate oxide thicknesses may be used for lower voltage transistors, memory array transistors, and higher voltage transistors.