Abstract: An electrical connection device includes a first connector and a second connector. The first connector includes an insulative body and a plurality of first terminals provided to the insulative body, the insulative body has an insertion groove, a first insertion opening which is communicated with the insertion groove and toward a first direction, a second insertion opening which is communicated with the insertion groove and toward a second direction and a stopping block which is positioned between the first insertion opening and the second insertion opening, the stopping block has a first stopping face which faces the first direction and a second stopping face which faces the second direction.

Abstract: A vacuum packaged infrared sensor array with excellent performances is described. The individual pixel of the infrared sensor array has a thermopile made of recrystallized amorphous silicon resulting in low resistance, low thermal noise, high integration and high sensitivity. The vacuum in the packaged infrared sensor array is enhanced by low temperature oxidization of a porous silicon layer formed in a lid silicon substrate which is bonded with the infrared sensor array silicon substrate. The driving force for lowering oxidization temperature is reduction in surface energy of porous silicon. It has been reported that the surface energy is 0.0001 J/cm2 for porous silicon and 0.2 J/cm2 for planar crystal silicon.

Abstract: The flame retardant yarn of the present invention is made by blending flame retardant viscose fiber and at least one high tenacity flame retarding fiber, the at least one high tenacity flame retarding fiber is flame retardant polyester or flame retardant finishing viscose fiber, wherein the flame retardant viscose fiber is 40˜90% by weight of the flame retardant yarn. The flame retardant yarn takes advantage of the superior flame retardance of the flame retardant viscose fiber, and takes the flame retardant viscose fiber to blend with other good tenacity and spinnability fiber by adjusting amount of raw materials in reasonable balance and avoiding disadvantages of the raw materials to optimize advantages of the flame retardant viscose fiber such as flame retardancy and tenacity so as to provide the flame retardant viscose fiber with high flame retardancy, long lasting flame retardancy effect, strength and elongation performance and good abrasion resistance.

Abstract: A three-way catalyst article, and its use in an exhaust system for internal combustion engines, is disclosed. The catalyst article for treating exhaust gas comprising: a substrate comprising an inlet end and an outlet end with an axial length L; a first catalytic region comprising a first platinum group metal (PGM) component and a first oxygen storage capacity (OSC) material, wherein the first OSC material has a fresh specific surface area (SSA) of at least 10 m2/g; and wherein the first OSC material has an SSA difference of no more than 30 m2/g between the fresh first OSC material and the aged first OSC material.

Abstract: The present disclosure relates to a power connector which comprises an insulative housing and a terminal. The insulative housing defines a terminal receiving groove therein and comprises a stopping wall. The terminal is positioned in the terminal receiving groove and comprises a mating portion, a stopping portion and a wire connecting portion. The stopping portion abuts against the stopping wall and comprises a first horizontal portion and a second horizontal portion. The first horizontal portion comprises a first front end edge. The second horizontal portion comprises a second front end edge.

Abstract: A vacuum packaged infrared sensor array with excellent performances is described. The individual pixel of the infrared sensor array has a thermopile made of recrystallized amorphous silicon resulting in low resistance, low thermal noise, high integration and high sensitivity. The vacuum in the packaged infrared sensor array is enhanced by low temperature oxidization of a porous silicon layer formed in a lid silicon substrate which is bonded with the infrared sensor array silicon substrate. The driving force for lowering oxidization temperature is reduction in surface energy of porous silicon. It has been reported that the surface energy is 0.0001 J/cm2 for porous silicon and 0.2 J/cm2 for planar crystal silicon.

Abstract: A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively.

Abstract: In some examples, a transistor includes a first well doped with a first-type dopant having a first concentration. The transistor also includes a gate oxide layer on a portion of the first well and a gate layer on the gate oxide layer. The transistor further includes a first segment of a second well doped with the first-type dopant having a second concentration, the first segment underlapping a first portion of the gate layer. The transistor also includes a source region doped with a second-type dopant having a third concentration, the source region in the first segment. The transistor further includes a drain region doped with the second-type dopant having a concentration that is substantially the same as the third concentration.

Abstract: The present disclosure relates to a power connector which comprises an insulative housing and a terminal. The insulative housing defines a terminal receiving groove therein and comprises a stopping wall. The terminal is positioned in the terminal receiving groove and comprises a mating portion, a stopping portion and a wire connecting portion. The stopping portion abuts against the stopping wall and comprises a first horizontal portion and a second horizontal portion. The first horizontal portion comprises a first front end edge. The second horizontal portion comprises a second front end edge.

Abstract: In some examples, a flash memory comprises a first gate and a second gate located over a semiconductor substrate a third gate located between the first gate and the second gate a floating gate located between the third gate and the semiconductor substrate; and a doped region located within the semiconductor substrate and proximate the second gate, wherein the doped region is configured to receive a positive bias voltage with respect to the semiconductor substrate during an erase cycle.

Abstract: A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively.

Abstract: Disclosed are a three-way catalyst product, and the use thereof in an exhaust system for an internal combustion engine. The catalyst product for exhaust gas treatment contains a carrier comprising an inlet end and an outlet end and having an axial length L; a first catalytic region starting from the inlet end and extending by a length less than the axial length L, wherein the first catalytic region contains a first palladium component; a second catalytic region starting from the outlet end and extending by a length less than the axial length L, wherein the second catalytic region contains a second palladium component; and a third catalytic region starting from the outlet end and extending by a length less than the axial length L, wherein the third catalytic region contains a third rhodium component, and the third catalytic region is stacked on the second catalytic region.

Abstract: The inventive ophthalmic composition comprises: (A) polyvinyl pyrrolidone K90; and (B) at least one selected from the group consisting of an oil component, a grease component and polyethylene glycol. The ophthalmic composition alleviates a sticky sensation to ensure an excellent use sensation.

Abstract: In some examples, a transistor includes a first well doped with a first-type dopant having a first concentration. The transistor also includes a gate oxide layer on a portion of the first well and a gate layer on the gate oxide layer. The transistor further includes a first segment of a second well doped with the first-type dopant having a second concentration, the first segment underlapping a first portion of the gate layer. The transistor also includes a source region doped with a second-type dopant having a third concentration, the source region in the first segment. The transistor further includes a drain region doped with the second-type dopant having a concentration that is substantially the same as the third concentration.

Abstract: A multi-purpose Micro-Electro-Mechanical Systems (MEMS) thermopile sensor able to use as a thermal conductivity sensor, a Pirani vacuum sensor, a thermal flow sensor and a non-contact infrared temperature sensor, respectively.

Abstract: An electrical connector has an insulative housing, a plurality of conductive terminals mounted in the housing and a locking structure integrally formed on the housing. The locking structure has an elastic locking member and an elastic supporting arm. The locking member has an elastic locking arm and a locking portion provided on the locking arm, one end of the locking arm is connected to the housing, the other end of the locking arm is free and is suspended above an upper surface of the housing. The supporting arm is positioned between the locking arm and the upper surface of the housing. When the locking arm and the upper surface of the housing together apply a pressure to the supporting arm, the supporting arm is capable of providing an elastic supporting force for the locking arm in a direction away from the upper surface of the housing.

Abstract: The present disclosure provides an electrical connector, which comprises an insulating base portion, a mating portion, a latching portion and a limiting block.

Abstract: The present disclosure relates to a power connector which comprises an insulative housing and a terminal. The insulative housing defines a terminal receiving groove therein and comprises a stopping wall. The terminal is positioned in the terminal receiving groove and comprises a mating portion, a stopping portion and a wire connecting portion. The stopping portion abuts against the stopping wall and comprises a first horizontal portion and a second horizontal portion. The first horizontal portion comprises a first front end edge. The second horizontal portion comprises a second front end edge.

Abstract: In some examples, an integrated circuit comprises a first plate, a second plate, and a dielectric layer disposed between the first and second plates, the first and second plates and the dielectric layer forming a vertical capacitor, wherein the first and second plates and the dielectric layer of the vertical capacitor are disposed on an isolation region of the integrated circuit.

Abstract: In some examples, a flash memory comprises a first gate and a second gate located over a semiconductor substrate a third gate located between the first gate and the second gate a floating gate located between the third gate and the semiconductor substrate; and a doped region located within the semiconductor substrate and proximate the second gate, wherein the doped region is configured to receive a positive bias voltage with respect to the semiconductor substrate during an erase cycle.