Abstract: A silicon-based anode material for secondary batteries, a preparation method thereof and a secondary battery are provided. The silicon-based anode material includes: an inner core including an Si particle and silicon oxide SiOx1, where 0<x1<2, a first shell layer including a compound of the general formula MySiOz (0<y?4, 0<z?5, and z?x1) and a C particle, wherein the first shell layer covers the inner core, and the contents of M and C in the first shell layer gradually increase from a side thereof close to the inner core to another side thereof far away from the inner core; and a second shell layer including a carbon film layer or a composite film layer formed by a carbon film layer and a conductive additive, the second shell layer covers the first shell layer. The first charge-discharge cycle capability of the silicon-based anode material is improved, and the manufacturing cost is reduced.

Abstract: The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array; each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor; the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor; and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line.

Abstract: The present disclosure relates to a memory device based on a ferroelectric capacitor, which includes a control unit for writing data into a memory cell or reading data from the memory cell and a plurality of memory cells arranged in an array; each memory cell includes an external interface, a first switch, a transistor, a first capacitor and a second capacitor, wherein at least one of the first capacitor and the second capacitor is a ferroelectric capacitor; the first switch has a first port connected with a first word line, a second port connected with a bit line, and a third port connected with one end of the first capacitor; and the transistor has a gate electrode connected with another end of the first capacitor and one end of the second capacitor, a source electrode connected with a first read terminal, and a drain electrode connected with a second read terminal, wherein another end of the second capacitor is connected with a second word line.

Abstract: The present disclosure relates to a static random-access memory and an electronic device. The memory includes at least one storage circuit, wherein the storage circuit includes a first inverter, a second inverter, a first switch, a second switch, a third switch, a fourth switch, a fifth switch, a word-line, a first bit-line, a second bit-line, a shift-input line, and a shift-output line. The circuit is used to access data by using the first bit-line and/or the second bit-line when it works in a first mode, and the circuit is used to shift the input data to the shift-input line and output the shifted data through the shift-output line when it works in a second mode. By implementing shift-input and shift-output within the memory, the disclosed embodiment can achieve high-concurrency data access and data update, and it also enables high integration and low power consumption.

Abstract: An antenna system with a reconfigurable radiation pattern characteristic for the fifth generation (5G) mobile terminal is described, which includes multiple antenna sub-arrays with different radiation patterns and a switch that connects each antenna sub-array and controls switching between different antenna sub-arrays. A switch is disposed between the antenna sub-arrays and an RF front-end module. By switching between the different sub-arrays, the radiation in a desired direction can be selected. Therefore, the problem of the beam coverage and beam scanning blind spot of 5G terminal antenna in millimeter waveband can be solved effectively. Through expanding the scanning angle of the beam scanning, the scheme of 5G terminal antenna with a reconfigurable radiation pattern can be realized. The antenna structure of this disclosure makes full use of the space of the PCB board, and has the advantages of miniaturization, simple processing and compact structure, etc.

Abstract: An antenna system with a reconfigurable radiation pattern characteristic for the fifth generation (5G) mobile terminal is described, which includes multiple antenna sub-arrays with different radiation patterns and a switch that connects each antenna sub-array and controls switching between different antenna sub-arrays. A switch is disposed between the antenna sub-arrays and an RF front-end module. By switching between the different sub-arrays, the radiation in a desired direction can be selected. Therefore, the problem of the beam coverage and beam scanning blind spot of 5G terminal antenna in millimeter waveband can be solved effectively. Through expanding the scanning angle of the beam scanning, the scheme of 5G terminal antenna with a reconfigurable radiation pattern can be realized. The antenna structure of this disclosure makes full use of the space of the PCB board, and has the advantages of miniaturization, simple processing and compact structure, etc.