Patents by Inventor Xikang JIN

Xikang JIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11588055
    Abstract: The present disclosure provides a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor of the present disclosure include a plurality of insulating layers, among which at least one insulating layer on the low temperature polysilicon layer comprises organic material, so vias could be formed in the organic material by an exposing and developing process, thereby effectively avoiding the over-etching problem of the low temperature polycrystalline silicon layer caused by dry etching process. By adopting the method for manufacturing the film transistors of the present disclosure, the contact area and uniformity of the drain electrode and the low temperature polysilicon material layer can be increased; the conductivity can be improved; and the production cycle of products can be greatly reduced and thereby improving the equipment capacity.
    Type: Grant
    Filed: September 25, 2018
    Date of Patent: February 21, 2023
    Assignees: ORDOS YUANGSHENG OPTOELECTRONICS CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Wei Liu, Yongbo Ju, Xikang Jin, Zhimin Wang, Jianbin Gao, Xiaoguang Chen, Xinbo Zhou, Jianjun Chen
  • Publication number: 20210328073
    Abstract: The present disclosure provides a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor of the present disclosure include a plurality of insulating layers, among which at least one insulating layer on the low temperature polysilicon layer comprises organic material, so vias could be formed in the organic material by an exposing and developing process, thereby effectively avoiding the over-etching problem of the low temperature polycrystalline silicon layer caused by dry etching process. By adopting the method for manufacturing the film transistors of the present disclosure, the contact area and uniformity of the drain electrode and the low temperature polysilicon material layer can be increased; the conductivity can be improved; and the production cycle of products can be greatly reduced and thereby improving the equipment capacity.
    Type: Application
    Filed: September 25, 2018
    Publication date: October 21, 2021
    Inventors: Wei LIU, Yongbo JU, Xikang JIN, Zhimin WANG, Jianbin GAO, Xiaoguang CHEN, Xinbo ZHOU, Jianjun CHEN