Abstract: A preparation method of an SSZ-13 zeolite membrane is provided, and the SSZ-13 zeolite membrane belongs to the technical field of zeolite membranes. The problem that the SSZ-13 zeolite membranes synthesized in the art have a poor quality and a large thickness is solved. A FAU-type zeolite is used as a raw material, and transformed into an SSZ-13 zeolite with a particle size of 210 nm through intergranular transformation, with a mass yield of 91.2%. A crystal seed prepared by the preparation method has a small particle size and a small thickness.

Abstract: Disclosed is a polycyclic azide desulfurizer, including the following raw materials in parts by mass: 20-35 parts of an alcohol amine, 20-35 parts of an amide, and an aldehyde, which is 10-15 parts of a small-molecule aldehyde or 20-35 parts of a polyaldehyde. Also disclosed is a method for synthesis of the polycyclic azide desulfurizer, including: mixing an alcohol amine with an amide and stirring, heating, adding a catalyst I dropwise, and performing reaction to obtain a monocyclic triazine, heating the monocyclic triazine, mixing with a polyaldehyde and stirring, adding a catalyst II dropwise, and performing coupling while stirring; alternatively, mixing a small-molecule aldehyde with an amide and stirring, heating, adding a catalyst I dropwise, and performing reaction, adding an alcohol amine, adding a catalyst II dropwise, and performing coupling while stirring; and separating a by-product from a product obtained after the coupling out, and purifying the product.

Abstract: A purified composition of steviol glycoside molecules is described. The composition imparts desirable taste, flavor and flavor modifying properties to food, beverages, and other consumable products.

Abstract: The present disclosure relates to a preparation method of an SSZ-13 zeolite membrane, and belongs to the technical field of zeolite membranes. The present disclosure solves the problem that the SSZ-13 zeolite membranes synthesized in the art have a poor quality and a large thickness. In the present disclosure, a FAU-type zeolite is used as a raw material, and transformed into an SSZ-13 zeolite with a particle size of 210 nm through intergranular transformation, with a mass yield of 91.2%. A crystal seed prepared by the preparation method of the present disclosure has a small particle size and a small thickness.

Abstract: A purified composition of steviol glycoside molecules is described. The composition imparts desirable taste, flavor and flavor modifying properties to food, beverages, and other consumable products.

Abstract: A purified composition of steviol glycoside molecules is described. The composition imparts desirable taste, flavor and flavor modifying properties to food, beverages, and other consumable products.

Abstract: A purified composition of steviol glycoside molecules is described. The composition imparts desirable taste, flavor and flavor modifying properties to food, beverages, and other consumable products.

Abstract: A touch structure, an array substrate and a display device are provided. The touch structure includes touch electrodes and touch electrode lines including a first touch electrode line and a second touch electrode line connected with different touch electrodes. The first touch electrode line includes a first wire and a second wire which are mutually connected. The first wire is connected with the touch electrode, which is connected with the first touch electrode line, via a first through hole running through the insulation layer. The second wire is connected with the touch electrode, which is connected with the first touch electrode line, via a second through hole running through the insulation layer. At least a part of the second touch electrode line is between the second through hole and the first through hole in an arrangement direction of the touch electrode lines.

Abstract: A touch structure, an array substrate and a display device are provided. The touch structure includes touch electrodes and touch electrode lines including a first touch electrode line and a second touch electrode line connected with different touch electrodes. The first touch electrode line includes a first wire and a second wire which are mutually connected. The first wire is connected with the touch electrode, which is connected with the first touch electrode line, via a first through hole running through the insulation layer. The second wire is connected with the touch electrode, which is connected with the first touch electrode line, via a second through hole running through the insulation layer. At least a part of the second touch electrode line is between the second through hole and the first through hole in an arrangement direction of the touch electrode lines.

Abstract: An array substrate and a fabrication method thereof, and a display panel are provided. The array substrate includes: a base substrate; an isolation layer on the base substrate; and a first thin film transistor on the isolation layer and a first gate line extending in a gate line direction, wherein the first thin film transistor includes a first gate electrode and a first active layer, the isolation layer includes a protrusion portion which extends in the gate line direction and protrudes upwards with respect to the base substrate, and each of orthogonal projections of the first active layer and the first gate electrode of the first thin film transistor on the main surface of the base substrate is overlapped with an orthogonal projection of the first lateral surface of the protrusion portion on the main surface of the base substrate.

Abstract: An array substrate and a fabrication method thereof, and a display panel are provided. The array substrate includes: a base substrate; an isolation layer on the base substrate; and a first thin film transistor on the isolation layer and a first gate line extending in a gate line direction, wherein the first thin film transistor includes a first gate electrode and a first active layer, the isolation layer includes a protrusion portion which extends in the gate line direction and protrudes upwards with respect to the base substrate, and each of orthogonal projections of the first active layer and the first gate electrode of the first thin film transistor on the main surface of the base substrate is overlapped with an orthogonal projection of the first lateral surface of the protrusion portion on the main surface of the base substrate.