Abstract: A photovoltaic cell is provided, which includes: a substrate; a tunnel oxide layer and a doping conductive layer sequentially disposed on a first surface of the substrate in a direction away from the substrate, wherein the tunnel oxide layer includes nitrogen and phosphorus; a doping surface field disposed in the substrate, wherein the doping surface field is in contact with a side of the tunnel oxide layer facing the substrate, the doping surface field includes a doping element of a same conductivity type as a doping element in the substrate, and a doping concentration on a side of the doping surface field facing the tunnel oxide layer is greater than a doping concentration on a side of the doping surface field away from the tunnel oxide layer; and a metal electrode electrically connected to the doping conductive layer.

Abstract: The present disclosure provides a solar cell. The solar cell includes a substrate, where the substrate has a front surface and a rear surface, the rear surface includes a textured region and a flat region, a doped surface field is formed in the textured region of the substrate; a tunneling dielectric layer, where the tunneling dielectric layer is located on the flat region; a doped conductive layer, where the doped conductive layer is located on the tunnelling dielectric layer, the doped conductive layer has doping elements, and the doped conductive layer has the same type of the doping elements with the doped surface field; a rear electrode, where a part of a bottom surface of the rear electrode is located in the doped conductive layer and the part of the bottom surface of the rear electrode is in contact with the doped surface field.

Abstract: A solar cell includes a substrate having a front surface and a back surface opposite to the front surface; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed on the front surface of the substrate and in a direction away from the substrate; where the first passivation layer includes a dielectric material; the second passivation layer includes a first SiuNv material, and a value of v/u is 1.3?v/u?1.7; and the third passivation layer includes a SirOs material, and a value of s/r is 1.9?s/r?3.2; and a tunneling oxide layer and a doped conductive layer sequentially formed on the back surface of the substrate and in a direction away from the back surface; the doped conductive layer and the substrate are doped to have a same conductivity type.

Abstract: Embodiments of the present disclosure provide methods, apparatus and computer program products for service discovery. A method implemented at a primary Network-Function Repository Function, NRF, in a communication network, wherein the communication network comprising at least one primary NRF and at least one secondary NRFs, the method comprising: receiving a discovery request from a first secondary NRF, wherein the discovery request comprises a service query information for a target Network Function, NF, obtaining target NF information, providing the target NF information to the first secondary NRF.

Abstract: Provided is a busbar-free interdigitated back contact (IBC) solar cell and an IBC solar cell module. The IBC solar cell includes a semiconductor substrate, finger electrode lines and conductive lines. The finger electrode lines include first finger electrode lines and second finger electrode lines that are alternately arranged on the semiconductor substrate. The conductive lines include first conductive lines and second conductive lines that are alternately arranged. The first conductive lines are connected to the first finger electrode lines and spaced apart from the second finger electrode lines. The second conductive lines are connected to the second finger electrode lines and spaced apart from the first finger electrode lines.

Abstract: Provided is a photovoltaic solar cell, a solar cell module and a manufacturing process. The photovoltaic solar cell includes a silicon substrate, and a passivation layer located on at least one surface of the silicon substrate. An electrode, an electrode pad and an extension line are printed on at least one surface of the silicon substrate. The electrode includes a busbar and a finger crossed with each other, and the finger is in contact with the silicon substrate. Two ends of the extension line are respectively connected to the busbar and the electrode pad, and the extension line is in contact with the silicon substrate.

Abstract: A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j?[0.97, 7.58].

Abstract: A battery unit may comprise a first cell type and a second cell type electrically connected at least in series, wherein the first cell type may include N first cells, the second cell type may include M second cells, and N and M are positive integers; the first cell may have a discharge cell balance rate of CB1, the second cell may have a discharge cell balance rate of CB2, with 0.5?CB1?CB2?1.4, and when the battery unit is charged to 95%-100% of the state of charge, the first cell may have a corresponding open-circuit voltage change rate of not greater than 0.005 V/% SOC, and the second cell type may have a corresponding open-circuit voltage change rate greater than that of the first cell.

Abstract: A solar cell, a method for producing a solar cell, and a solar module are provided. The solar cell includes: an N-type substrate and a P-type emitter formed on a front surface of the substrate; a first passivation layer, a second passivation layer and a third passivation layer sequentially formed over the front surface of the substrate and in a direction away from the P-type emitter, and a passivated contact structure disposed on a rear surface of the substrate. The first passivation layer includes a first Silicon oxynitride (SiOxNy) material, where x>y. The second passivation layer includes a first silicon nitride (SimNn) material, where m>n. The third passivation layer includes a second silicon oxynitride (SiOiNj) material, where a ratio of i/j?[0.97, 7.58].

Abstract: A solar cell and a photovoltaic module are disclosed, including: a substrate; a tunneling dielectric layer and a doped conductive layer disposed on the substrate, the tunneling dielectric layer being disposed between the doped conductive layer and a surface of the substrate, the doped conductive layer having a N-type or P-type doping element and having a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, a doping concentration in the first heavily doped regions being greater than that in other regions of the doped conductive layer; a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; and a plurality of electrodes spaced apart from each other, extending in a second direction and penetrating the passivation layer to contact the doped conductive layer, at least two first heavily doped regions contacting a same electrode.

Abstract: The present disclosure provides a solar cell, a method for preparing the solar cell, and a photovoltaic module. The solar cell includes: a substrate having a first surface; a tunnelling oxide layer, a doped conductive layer and a first passivation layer that are formed over the first surface of the substrate sequentially in a direction away from the substrate; a first metal electrode and a second metal electrode, where the first metal electrode penetrates through the first passivation layer to be electrically connected to the doped conductive layer, the second metal electrode is connected to a surface of the first metal electrode facing toward the substrate, the second metal electrode penetrates through the tunnelling oxide layer to be in contact with the substrate; a local doped region, where the local doped region is located in the substrate, and covers the second metal electrode located in the substrate.

Abstract: Provided is a solar cell. The solar cell may include a semiconductor layer and a passivation film stack provided on a back surface of the semiconductor layer. The passivation film stack may include a first passivation layer provided on the back surface of the semiconductor layer and including a silicon-rich layer with a silicon atom concentration ranging from 5×1021/cm3 to 2.5×1022/cm3; a second passivation layer provided on a surface of the first passivation layer and including an oxygen-rich and nitrogen-rich layer; and a third passivation layer provided on a surface of the second passivation layer and including at least one silicon nitride film with a gradient-varied refractive index. A first refractive index of the first passivation layer may be greater than a second refractive index of the second passivation layer and smaller than a third refractive index of the third passivation layer.

Abstract: Provided is a method for manufacturing at least one solar cell, a method for manufacturing a monocrystalline silicon wafer and a photovoltaic module. The method for manufacturing a monocrystalline silicon wafer includes: providing a monocrystalline silicon rod; squaring the monocrystalline silicon rod to form a quasi-square silicon rod with quasi-square cross-section having an arc, a length of the arc being not less than 15 mm; slicing the quasi-square silicon rod to form at least one quasi-square silicon wafer having the arc. The method for manufacturing at least one solar cell includes: using the method described above to obtain a quasi-square silicon wafer having an arc; forming a first solar cell by processing the quasi-square silicon wafer; scribing the first solar cell to obtain a square-shaped sub-solar cell and at least one strip-shaped sub-solar cell. The above methods improve the utilization rate of the monocrystalline silicon rod and reduce production cost.

Abstract: A solar cell and a photovoltaic module are disclosed, including: a substrate; a tunneling dielectric layer and a doped conductive layer disposed on the substrate, the tunneling dielectric layer being disposed between the doped conductive layer and a surface of the substrate, the doped conductive layer having a N-type or P-type doping element and having a plurality of first heavily doped regions spaced apart from each other and extending in a first direction, a doping concentration in the first heavily doped regions being greater than that in other regions of the doped conductive layer; a passivation layer disposed on a surface of the doped conductive layer facing away from the substrate; and a plurality of electrodes spaced apart from each other, extending in a second direction and penetrating the passivation layer to contact the doped conductive layer, at least two first heavily doped regions contacting a same electrode.

Abstract: A positive electrode active material comprising an A material and a B material, wherein the A material is at least one selected from the following single crystal materials or single crystal-like materials: LixMy(PO4)z, wherein M is selected from one or more of Ni, Co, Mn, Fe, Mg, Al, V, Zn, Zr, and F, v is the valence of M, 1?x?3, 1?z?3, and x+vy-3z=0; the A material has a Dv50 of 0.8 µm to 4.2 µm; the B material is selected from at least one of the following materials: (i) LiAO2, wherein A is Ni, Co or Mn; or (ii) LiNiaCobE1-a-bO2, wherein E is selected from at least one of Mn and Al, 0.50?a?0.98, and 0.001?b?0.3; wherein based on the total weight of the positive electrode active material, the A material is present in a mixing ratio m of 50 wt% to 97 wt%.

Abstract: Embodiments of the present disclosure provide a solar cell and a solar cell module. The solar cell includes a first region and a second region, and further includes a substrate having a first surface and a second surface; a tunneling layer covering the second surface; a first emitter disposed on part of the tunneling layer in the first region; and a second emitter disposed on part of the tunneling layer in the second region and on the first emitter, a conductivity type of the second emitter being different from a conductivity type of the first emitter. The solar cell further includes a first electrode disposed in the first region and configured to electrically connect with the first emitter by penetrating through the second emitter; and a second electrode disposed in the second region and configured to electrically connect with the second emitter.

Abstract: A solar cell and a photovoltaic module including the same are provided. The solar cell includes a substrate having a first surface and a second surface opposite to each other; a first passivation stack disposed on the first surface and including a first oxygen-rich dielectric layer, a first silicon-rich dielectric layer, a second oxygen-rich dielectric layer, and a second silicon-rich dielectric layer that are sequentially disposed in a direction away from the first surface, wherein an atomic fraction of oxygen in the first oxygen-rich dielectric layer is less than an atomic fraction of oxygen in the second oxygen-rich dielectric layer; a tunneling oxide layer disposed on the second surface; a doped conductive layer disposed on a surface of the tunneling oxide layer; and a second passivation layer disposed on a surface of the doped conductive layer.

Abstract: A method and apparatus for testing solar cell performance. The method for testing solar cell performance includes: provide a solar cell; illuminating the solar cell; acquire an illumination intensity of light onto the solar cell; acquire a luminous intensity of light emitted from the solar cell in response to the solar cell being illuminated; and determine the solar cell performance based on the illumination intensity and the luminous intensity.

Abstract: Provided is a solar cell and a method for manufacturing the same, the method includes: forming a doped layer on a surface of a semiconductor substrate, the doped layer having a first doping concentration of a doping element in the doped layer; depositing, on a surface of the doped layer, a doped amorphous silicon layer including the doping element; selectively removing at least one region of the doped amorphous silicon layer; performing annealing treatment, for the semiconductor substrate to form a lightly doped region having the first doping concentration and a heavily doped region having a second doping concentration in the doped layer, the second doping concentration is greater than the first doping concentration; and forming a solar cell by post-processing the annealed semiconductor substrate. The solar cell and the method for manufacturing the same simplify the manufacturing process and improve conversion efficiency of the solar cell.

Abstract: Provided are a solar cell, a manufacturing method thereof, and a photovoltaic module. The solar cell includes: a semiconductor substrate, in which a rear surface of the semiconductor substrate having a first texture structure, the first texture structure includes two or more first substructures at least partially stacked on one another, and in a direction away from the rear surface and perpendicular to the rear surface, a distance between a top surface of an outermost first substructure and a top surface of an adjacent first substructure being less than or equal to 2 ?m; a first passivation layer located on a front surface of the semiconductor substrate; a tunnel oxide layer located on the first texture structure; a doped conductive layer located on a surface of the tunnel oxide layer; and a second passivation layer located on a surface of the doped conductive layer.