Abstract: An apparatus for applying a wafer to a polishing belt during a CMP operation includes a spindle having an upper end and a lower end. A wafer carrier is coupled to the lower end of the spindle. A linear force generator is disposed at the upper end of the spindle. A load cell is positioned between the linear force generator and the upper end of the spindle. A controller is coupled to the load cell for controlling the force applied by the linear force generator. A method for applying downward force on a wafer during CMP also is described.

Abstract: An air platen assembly is described and includes a platen that has a plurality of concentric rings. Each of the rings has a plurality of openings in order to provide a cushion of air to a CMP belt. At least one of the rings extends beyond an outer edge of a wafer to be planarized by the CMP belt. A support is attached with the platen and has a plurality of air ports for pressurized air to pass to the rings of the platen. A gasket is positioned between the support and the platen and has a plurality of cutouts that align with the openings and the air ports. A base is also included and supports the support.

Abstract: A method of joining sections of polishing pad for use in the chemical mechanical planarization of a semiconductor wafer. Two sections of polishing pad are positioned so that they contact one another. The two sections are then welded together to create a robust joint. The joint is resistant to infiltration of slurry and is not susceptible to delamination that commonly occurs in a typical laminate joint.

Abstract: An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polishing belt that is in contact with the interlocking belt. The polishing belt has a plurality of polishing belt stud holes, each configured to interlock with an upper stud end.

Abstract: An interlocking polishing belt apparatus is disclosed. The interlocking polishing belt apparatus includes an interlocking belt, which includes a plurality of studs each having an upper stud end and a lower stud end. In addition, the interlocking polishing belt apparatus includes a polishing belt that is in contact with the interlocking belt. The polishing belt has a plurality of polishing belt stud holes, each configured to interlock with an upper stud end.

Abstract: A polishing apparatus includes a rotatable head assembly including a substrate retainer that incorporates a cavity in the face surface of the substrate retainer for temporarily holding polishing slurry during operation of the polishing apparatus. The cavity resides in the face surface of the substrate retainer at a location adjacent the perimeter surface of the retainer. During operation of the polishing apparatus, slurry flowing along the surface of the polishing pad flows into the cavity where a portion of the slurry is temporarily held. As the head assembly of the polishing apparatus rotates against the polishing pad, slurry continuously flows from the cavity across the polishing pad and is uniformly distributed across the exposed surface of the substrate being polished. An offset in the cavity wall permits used slurry to flow away from the substrate retainer during rotation of the head assembly.

Abstract: A polishing member for use in the chemical mechanical planarization of a semiconductor wafer has a first surface for contacting the semiconductor wafer, a second surface opposite the first surface oriented away from the wafer. A plurality of grooves formed in the second surface. The plurality of grooves enable the polishing member to conform to the surface of the wafer and provide uniform polishing of the wafer. In one embodiment the polishing member comprises a linear belt having at least two portions mated at a joint. The plurality of grooves reduce the stress on the joints by increasing the flexibility of the belt thereby reducing the risk of delamination of the belt and joints.

Abstract: The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the substrate handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450° C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant.

Abstract: The invention provides methods, systems and apparatus for the metered transport of fine powders into receptacles. According to one exemplary embodiment, an apparatus is provided which comprises a hopper having an opening. The hopper is adapted to receive a bed of fine powder. At least one chamber, which is moveable to allow the chamber to be placed in close proximity to the opening, is also provided. An element having a proximal end and a distal end is positioned within the hopper such that the distal end is near the opening. A vibrator motor is provided to vibrate the element when within the fine powder.

Abstract: The amount of particulate contamination produced due to rubbing between a semiconductor substrate and the robotic substrate handling blade has been greatly reduced by the use of specialized materials either as the principal material of construction for the semiconductor substrate handling blade, or as a coating upon the surface of the wafer handling blade. In particular, the specialized material must exhibit the desired stiffness at temperatures in excess of about 450.degree. C.; the specialized material must also have an abrasion resistant surface which does not produce particulates when rubbed against the semiconductor substrate. The abrasion resistant surface needs to be very smooth, having a surface finish of less than 1.0 micro inch, and preferably less than 0.2 micro inch. In addition, the surface must be essentially void-free. In the most preferred embodiments, the upper, top surface of the substrate handling blade is constructed from a dielectric material being smooth, non-porous, and wear-resistant.