Patents by Inventor Yan-Ming Tsai

Yan-Ming Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190273023
    Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
    Type: Application
    Filed: March 1, 2018
    Publication date: September 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Yip LOH, Chih-Wei CHANG, Hong-Mao LEE, Chun-Hsien HUANG, Yu-Ming HUANG, Yan-Ming TSAI, Yu-Shiuan WANG, Hung-Hsu CHEN, Yu-Kai CHEN, Yu-Wen CHENG
  • Publication number: 20190252381
    Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Inventors: Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Ziwei Fang, Chih-Wei Chang, Chien-Hao Chen, Huicheng Chang
  • Patent number: 10382878
    Abstract: A sound reproducing method used in sound reproducing apparatus that includes the steps outlined below is provided. A sound signal with a three-dimensional (3D) sound generating process is generated according to listener data and sound data. Whether a sound source position is within a target region relative to a listener position within a virtual environment is determined according to the listener data and the sound data. The sound signal is multiplied by an adjusting function to enhance peaks and valleys of the sound signal while maintaining a behavior of the sound signal when the sound source position is within the target region. The sound signal is reproduced.
    Type: Grant
    Filed: October 17, 2018
    Date of Patent: August 13, 2019
    Assignee: HTC Corporation
    Inventors: Yan-Min Kuo, Chun-Min Liao, Li-Yen Lin, Chi-Tang Ho, Tien-Ming Wang, Tsung-Yu Tsai
  • Publication number: 20190149843
    Abstract: Video data may be palette decoded. Data defining a palette table may be received. The palette table may comprise index values corresponding to respective colors. Palette index prediction data may be received and may comprise data indicating index values for at least a portion of a palette index map mapping pixels of the video data to color indices in the palette table. The palette index prediction data may comprise run value data associating run values with index values for at least a portion of a palette index map. A run value may be associated with an escape color index. The palette index map may be generated from the palette index prediction data at least in part by determining whether to adjust an index value of the palette index prediction data based on a last index value. The video data may be reconstructed in accordance with the palette index map.
    Type: Application
    Filed: January 17, 2019
    Publication date: May 16, 2019
    Applicant: VID SCALE, INC.
    Inventors: Chia-Ming Tsai, Yuwen He, Xiaoyu Xiu, Yan Ye
  • Publication number: 20190148230
    Abstract: A method for manufacturing a semiconductor includes following steps. An epitaxial structure including a first semiconductor material and a second semiconductor material is provided. A lattice constant of the second semiconductor material is greater than a lattice constant of the first semiconductor material. A metal-containing layer is deposited on the epitaxial structure. The metal containing layer includes a first metal material and a second metal material. An atomic size of the second metal material is greater than an atomic size of the first metal material. The metal-containing layer and the epitaxial structure are annealed to form a metal silicide layer on the epitaxial structure. The metal silicide layer includes the first semiconductor material, the second semiconductor material, the first metal material, and the second metal material.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 16, 2019
    Inventors: YAN-MING TSAI, WEI-YIP LOH, YU-MING HUANG, HUNG-HSU CHEN, CHIH-WEI CHANG
  • Patent number: 10269799
    Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Ziwei Fang, Chih-Wei Chang, Chien-Hao Chen, Huicheng Chang
  • Publication number: 20180337701
    Abstract: A system includes a first antenna for receiving a signal, a first band duplexer coupled to the first antenna, a first receiving path selection circuit connected to the first band duplexer configured to provide a first path and a second path, and a control circuit connected to the first path and the second path. The control circuit controls the first receiving path selection circuit to obtain receiving signal parameters from the first path and the second path, respectively. The control circuit selects a receiving path according to the receiving signal parameters from the first path and the second path. The receiving path is one of the first path or the second path, and is the path having a desired or optimum receiving signal parameter.
    Type: Application
    Filed: August 11, 2017
    Publication date: November 22, 2018
    Inventors: Yan-Ming TSAI, Wei-Yu TSENG
  • Publication number: 20180053763
    Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.
    Type: Application
    Filed: November 3, 2017
    Publication date: February 22, 2018
    Inventors: Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Ziwei Fang, Chih-Wei Chang, Chien-Hao Chen, Huicheng Chang
  • Patent number: 9812451
    Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: November 7, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Ziwei Fang, Chih-Wei Chang, Chien-Hao Chen, Huicheng Chang
  • Publication number: 20170221894
    Abstract: The present disclosure provides a method that includes providing a semiconductor substrate having a first region and a second region; forming a first gate within the first region and a second gate within the second region on the semiconductor substrate; forming first source/drain features of a first semiconductor material with an n-type dopant in the semiconductor substrate within the first region; forming second source/drain features of a second semiconductor material with a p-type dopant in the semiconductor substrate within the second region. The second semiconductor material is different from the first semiconductor material in composition. The method further includes forming first silicide features to the first source/drain features and second silicide features to the second source/drain features; and performing an ion implantation process of a species to both the first and second regions, thereby introducing the species to first silicide features and the second source/drain features.
    Type: Application
    Filed: February 3, 2016
    Publication date: August 3, 2017
    Inventors: Su-Hao Liu, Yan-Ming Tsai, Chung-Ting Wei, Ziwei Fang, Chih-Wei Chang, Chien-Hao Chen, Huicheng Chang
  • Patent number: 9520327
    Abstract: Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: December 13, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Wen Nieh, Hung-Chang Hsu, Wei-Jung Lin, Yan-Ming Tsai, Chen-Ming Lee, Mei-Yun Wang
  • Publication number: 20160035629
    Abstract: Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.
    Type: Application
    Filed: October 15, 2015
    Publication date: February 4, 2016
    Inventors: CHUN-WEN NIEH, HUNG-CHANG HSU, WEI-JUNG LIN, YAN-MING TSAI, CHEN-MING LEE, MEI-YUN WANG
  • Publication number: 20150380509
    Abstract: Methods of forming silicide contacts in semiconductor devices are presented. An exemplary method comprises providing a semiconductor substrate having an n-type field effect transistor (nFET) region and on a p-type field effect transistor (pFET) region; performing a pre-amorphized implantation (PAI) process to an n-type doped silicon (Si) feature in on the nFET region and a p-type doped silicon germanium (SiGe) feature in the pFET region, thereby forming an n-type amorphous silicon (a-Si) feature and a p-type amorphous silicon germanium (a-SiGe) feature; depositing a metal layer over each of the a-Si and a-SiGe features; performing an annealing process on the semiconductor device with a temperature ramp-up rate tuned according to a silicide growth rate difference between the n-type a-Si and the p-type a-SiGe features. During the annealing process the n-type a-Si and the p-type a-SiGe features are completely consumed, and amorphous silicide features are formed in the nFET and pFET regions.
    Type: Application
    Filed: August 28, 2015
    Publication date: December 31, 2015
    Inventors: Yan-Ming Tsai, Wei-Jung Lin, Fang-Cheng Chen, Chii-Ming Wu
  • Patent number: 9165838
    Abstract: Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: October 20, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chun-Wen Nieh, Hung-Chang Hsu, Wei-Jung Lin, Yan-Ming Tsai, Chen-Ming Lee, Mei-Yun Wang
  • Patent number: 9129842
    Abstract: Methods of forming silicide contacts in semiconductor devices are presented. An exemplary method comprises providing a semiconductor substrate having an n-type field effect transistor (nFET) region and a p-type field effect transistor (pFET) region; performing a pre-amorphized implantation (PAI) process to an n-type doped silicon (Si) feature in on the nFET region and a p-type doped silicon germanium (SiGe) feature in the pFET region, thereby forming an n-type amorphous silicon (a-Si) feature and a p-type amorphous silicon germanium (a-SiGe) feature; depositing a metal layer over each of the a-Si and a-SiGe features; performing an annealing process on the semiconductor device with a temperature ramp-up rate tuned according to a silicide growth rate difference between the n-type a-Si and the p-type a-SiGe features. During the annealing process the n-type a-Si and the p-type a-SiGe features are completely consumed, and amorphous silicide features are formed in the nFET and pFET regions.
    Type: Grant
    Filed: January 17, 2014
    Date of Patent: September 8, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yan-Ming Tsai, Wei-Jung Lin, Fang-Cheng Chen, Chii-Ming Wu
  • Publication number: 20150243565
    Abstract: Methods for forming electrical contacts are provided. First and second FETs are formed over a semiconductor substrate. Openings are etched in a dielectric layer formed over the substrate, where the openings extend to source and drain regions of the FETs. A hard mask is formed over the source and drain regions of FETs. A first portion of the hard mask is removed, where the first portion is formed over the source and drain regions of the first FET. First silicide layers are formed over the source and drain regions of the first FET. A second portion of the hard mask is removed, where the second portion is formed over the source and drain regions of the second FET. Second silicide layers are formed over the source and drain regions of the second FET. A metal layer is deposited within the openings to fill the openings.
    Type: Application
    Filed: February 26, 2014
    Publication date: August 27, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: CHUN-WEN NIEH, HUNG-CHANG HSU, WEI-JUNG LIN, YAN-MING TSAI, CHEN-MING LEE, MEI-YUN WANG
  • Publication number: 20150206881
    Abstract: Methods of forming silicide contacts in semiconductor devices are presented. An exemplary method comprises providing a semiconductor substrate having an n-type field effect transistor (nFET) region and a p-type field effect transistor (pFET) region; performing a pre-amorphized implantation (PAI) process to an n-type doped silicon (Si) feature in on the nFET region and a p-type doped silicon germanium (SiGe) feature in the pFET region, thereby forming an n-type amorphous silicon (a-Si) feature and a p-type amorphous silicon germanium (a-SiGe) feature; depositing a metal layer over each of the a-Si and a-SiGe features; performing an annealing process on the semiconductor device with a temperature ramp-up rate tuned according to a silicide growth rate difference between the n-type a-Si and the p-type a-SiGe features. During the annealing process the n-type a-Si and the p-type a-SiGe features are completely consumed, and amorphous silicide features are formed in the nFET and pFET regions.
    Type: Application
    Filed: January 17, 2014
    Publication date: July 23, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yan-Ming Tsai, Wei-Jung Lin, Fang-Cheng Chen, Chii-Ming Wu