Patents by Inventor Yann-Michel NIQUET

Yann-Michel NIQUET has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11321626
    Abstract: A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·?B·B>min(?(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that ?(Vbg)<g·?B·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, ?B corresponding to a Bohr magneton, ? corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: May 3, 2022
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Maud Vinet
  • Publication number: 20200226486
    Abstract: A method is described for controlling a spin qubit quantum device that includes a semiconducting portion, a dielectric layer covered by the semiconducting portion, a front gate partially covering an upper edge of the semiconducting portion, and a back gate. The method includes, during a manipulation of a spin state, the exposure of the device to a magnetic field B of value such that g·?B·B>min(?(Vbg)). The method also includes the application, on the rear gate, of an electrical potential Vbg of value such that ?(Vbg)<g·?B·B+2|MSO|, and the application, on the front gate, of a confinement potential and an RF electrical signal triggering a change of spin state, with g corresponding to the Landé factor, ?B corresponding to a Bohr magneton, ? corresponding to an intervalley energy difference in the semiconducting portion, and MSO corresponding to the intervalley spin-orbit coupling.
    Type: Application
    Filed: June 27, 2018
    Publication date: July 16, 2020
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Leo BOURDET, Louis HUTIN, Yann-Michel NIQUET, Maud VINET
  • Patent number: 9911841
    Abstract: Single-electron transistor comprising at least: first semiconductor portions forming source and drain regions, a second semiconductor portion forming at least one quantum island, third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions, a gate and a gate dielectric located on at least the second semiconductor portion, in which a thickness of each of the first semiconductor portions is greater than the thickness of the second semiconductor portion, and in which a thickness of the second semiconductor portion is greater than the thickness of each of the third semiconductor portions.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: March 6, 2018
    Assignee: Commissariat à l'énergie atomique et aux énergies alternatives
    Inventors: Sylvain Barraud, Ivan Duchemin, Louis Hutin, Yann-Michel Niquet, Maud Vinet
  • Publication number: 20160268406
    Abstract: Single-electron transistor comprising at least: first semiconductor portions forming source and drain regions, a second semiconductor portion forming at least one quantum island, third semiconductor portions forming tunnel junctions between the second semiconductor portion and the first semiconductor portions, a gate and a gate dielectric located on at least the second semiconductor portion, in which a thickness of each of the first semiconductor portions is greater than the thickness of the second semiconductor portion, and in which a thickness of the second semiconductor portion is greater than the thickness of each of the third semiconductor portions.
    Type: Application
    Filed: March 10, 2016
    Publication date: September 15, 2016
    Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
    Inventors: Sylvain BARRAUD, Ivan DUCHEMIN, Louis HUTIN, Yann-Michel NIQUET, Maud VINET