Patents by Inventor Yashu ZANG

Yashu ZANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12218277
    Abstract: A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: February 4, 2025
    Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Sihe Chen, Yu-Chieh Huang, Yashu Zang, Tao Han, Chunhsien Lee, Chimeng Lu, Jianbin Chen
  • Publication number: 20250029934
    Abstract: A light-emitting diode includes: a substrate, an epitaxial layer and a protective layer; the epitaxial layer is disposed on the substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked sequentially in that order; the protective layer covers the epitaxial layer; the epitaxial layer is divided into chiplets, each chiplet includes transverse and longitudinal sidewalls intersecting in transverse and longitudinal directions, dicing channels are defined between adjacent chiplets, the dicing channels include transverse and longitudinal dicing channels extending respectively in the transverse and longitudinal directions, the protective layer covers the dicing channels and chiplet sidewalls, a patterned structure is disposed on the protective layer in an intersecting area of the transverse and the longitudinal dicing channels, and includes a groove extending toward the substrate.
    Type: Application
    Filed: July 13, 2024
    Publication date: January 23, 2025
    Inventors: Gong CHEN, Yashu ZANG, Chunhsien LEE, Weichun TSENG, Chung-Ying CHANG, Jiming CAI, Shao-hua HUANG, Chunlan HE, Ziyan PAN
  • Publication number: 20240421251
    Abstract: A LED chip includes a current blocking layer that includes a first portion and a second portion and a current expansion layer defined with a first opening; and the first portion is disposed in the first opening of the current expansion layer. A first gap is defined between the first portion and the current expansion layer; a second gap is defined between the first portion and the second portion; an electrode structure covers the first portion and is in contact with an upper surface of a semiconductor light-emitting sequence stacking layer through the first gap; at least a portion of an extension strip is formed on the second portion of the current blocking layer and the current expansion layer; a part of an edge of the first opening of the current expansion layer is disposed on the second portion of the current blocking layer.
    Type: Application
    Filed: June 7, 2024
    Publication date: December 19, 2024
    Inventors: Gong CHEN, Yashu ZANG, Chunhsien LEE, Weichun TSENG, Chunlan HE, Chung-Ying CHANG, Jiming CAI, Shao-hua HUANG
  • Publication number: 20240405163
    Abstract: A light-emitting diode and a light-emitting device are provided. A transparent conductive layer, a current blocking layer and a first metal reflective layer are sequentially arranged on a side of a second semiconductor layer away from an active layer. A side of the first metal reflective layer adjacent to the current blocking layer is a first Al reflective layer, and metal Al has high reflectivity in a short-wave band, increasing the reflection of light radiated by the active layer. Since there is no need to form an adhesion layer between the first Al reflective layer and the current blocking layer, there is no light absorption problem of the adhesion layer. A projection area of the first metal reflective layer is greater than or equal to that of the transparent conductive layer, so that the first metal reflective layer can cover a larger light-emitting surface, thereby further improving the light reflection.
    Type: Application
    Filed: May 14, 2024
    Publication date: December 5, 2024
    Inventors: Bin JIANG, Chung-Ying CHANG, Jiming CAI, Yashu ZANG, Xiuli HUANG
  • Publication number: 20240322086
    Abstract: An ultraviolet light-emitting diode includes a semiconductor layered stack, an ohmic contact layer, a metal current spreading layer, and a reflective layer. The semiconductor layered stack includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and generating light by electron-hole recombination. The ohmic contact layer is formed on the second semiconductor layer, and forms an ohmic contact with the second semiconductor layer. The metal current spreading layer is formed on the ohmic contact layer, and electrically connected to the second semiconductor layer through the ohmic contact layer. The reflective layer is formed on the metal current spreading layer, and covers an exposed surface of the second semiconductor layer. A light-emitting device including the ultraviolet light-emitting diode is also provided.
    Type: Application
    Filed: May 31, 2024
    Publication date: September 26, 2024
    Inventors: Bin JIANG, Siyi LONG, Yashu ZANG, Kang-Wei PENG, Weichun TSENG, Sihe CHEN, Mingchun TSENG
  • Publication number: 20240243227
    Abstract: Provided are an ultraviolet light emitting diode (LED) and a manufacturing method thereof. The manufacturing method includes: providing an LED wafer including a substrate and a semiconductor stacked layer, the semiconductor stacked layer has a lower surface and an upper surface, the semiconductor stacked layer includes a first semiconductor layer, a light emitting layer and a second semiconductor layer; focusing a first laser beam and a second laser beam into the substrate, a focusing position of the first laser beam is closer to the lower surface than that of the second laser beam, the first laser beam is focused to form at least one first laser cutting line, laser scratches of each first laser cutting line are quasi-circular, and the at least one first laser cutting line includes a laser cutting line closest to the lower surface; and separating the LED wafer to form LED chips.
    Type: Application
    Filed: January 18, 2024
    Publication date: July 18, 2024
    Inventors: Gong CHEN, Yashu ZANG, Jianbin CHEN, Bin JIANG, Chung-Ying CHANG, Shao-Hua HUANG
  • Publication number: 20240186453
    Abstract: A light-emitting device includes a semiconductor laminate, a first electrode and a second electrode. The semiconductor laminate has a mesa surface, an upper surface, a connecting surface that connects the upper surface and the mesa surface, and a lower surface opposite to the mesa surface and the upper surface. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer disposed in such order in a direction from the lower surface to the upper surface. The semiconductor laminate has at least one trench that extends from the mesa surface into the first semiconductor layer. The first electrode is electrically connected to the first semiconductor layer and formed on the mesa surface, and has an extending portion that extends into the trench. The second electrode is electrically connected to the second semiconductor layer and formed on the upper surface.
    Type: Application
    Filed: November 30, 2023
    Publication date: June 6, 2024
    Inventors: Gong CHEN, Jianbin CHEN, Yashu ZANG, Bin JIANG, Chung-Yin CHANG, Shaohua HUANG, Weichun TSENG
  • Publication number: 20240063342
    Abstract: A light emitting diode includes a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure has a first surface and a second surface. The semiconductor structure includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer that includes a P-type contact layer, and a P-type base layer located between the P-type contact layer and the active layer. The active layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The first electrode is located on the second surface of the semiconductor structure, and is electrically connected to the N-type semiconductor layer. The second electrode is located on the second surface of the semiconductor structure, and is electrically connected to the P-type semiconductor layer. A P-type dopant concentration in the P-type contact layer gradually decreases along a direction from the first surface towards the second surface.
    Type: Application
    Filed: August 15, 2023
    Publication date: February 22, 2024
    Inventors: Miaomin CAI, Sihe CHEN, Yashu ZANG, Chungchieh YANG, Chung-Ying CHANG, Chi-Ming TSAI, Zhuoying JIANG, Yu-Chieh HUANG, Su-Hui LIN
  • Publication number: 20240047612
    Abstract: A light-emitting device includes a semiconductor laminate, a first contact electrode, and a second contact electrode. The semiconductor laminate includes a first semiconductor layer, an active layer, and a second semiconductor layer being laminated in a thickness direction. The semiconductor laminate has a first portion having a patterned structure that has a first surface constituted by the first semiconductor layer, a second surface opposite to the first surface and away from the first semiconductor layer, and a side surface interconnecting the first surface and the second surface, and a second portion being a light-emitting area. The first contact electrode is formed on the first portion, electrically connected to the first semiconductor layer and in contact with the first surface, the second surface and the side surface of the patterned structure. The second contact electrode is formed on the second portion and electrically connected to the second semiconductor layer.
    Type: Application
    Filed: August 4, 2023
    Publication date: February 8, 2024
    Inventors: Bin JIANG, Yashu ZANG, Gong CHEN, Sihe CHEN, Kang-Wei PENG, Chung-Ying CHANG, Weichun TSENG, Ming-Chun TSENG, Siyi LONG
  • Publication number: 20230352628
    Abstract: According to the disclosure, the light emitting device includes a substrate, a semiconductor structure, a first electrode unit, a second electrode unit, a plurality of micro elements. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor structure located on top of the first surface of the substrate, and has a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked sequentially. The first electrode unit is electrically connected to the first semiconductor layer. The second electrode unit is electrically connected to the second semiconductor layer. The plurality of micro elements are located on the second surface of the substrate. Each of the micro elements has a base that is protrusion that has a base diameter ranging from 400 nm to 1000 nm.
    Type: Application
    Filed: April 21, 2023
    Publication date: November 2, 2023
    Inventors: Bin JIANG, Yashu ZANG, Chung-Ying CHANG, Kang-Wei PENG, Sihe CHEN, Gong CHEN, Weichun TSENG, Ming-Chun TSENG, Siyi LONG
  • Publication number: 20230246137
    Abstract: The disclosure provides an ultraviolet light emitting diode including an epitaxial structure, a first contact electrode, a second contact electrode, a first connecting electrode, and a first insulating structure. The epitaxial structure includes a first semiconductor layer, a light emitting layer and a second semiconductor layer stacked in sequence. The first contact electrode is disposed on the epitaxial structure and electrically connected to the first semiconductor layer. The second contact electrode is disposed on the epitaxial structure and electrically connected to the second semiconductor layer. The first connecting electrode is disposed on the first contact electrode. The first insulating structure is disposed on the first connecting electrode and the second contact electrode. The epitaxial structure has multiple conductive holes penetrating from the second semiconductor layer down to the first semiconductor layer.
    Type: Application
    Filed: December 22, 2022
    Publication date: August 3, 2023
    Applicant: Xiamen San'an Optoelectronics Co., Ltd.
    Inventors: Yashu ZANG, Sihe CHEN, Jiali ZHUO, Chunlan HE, Bin JIANG, Chung-Ying CHANG, Weichun TSENG
  • Publication number: 20230178684
    Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.
    Type: Application
    Filed: November 10, 2022
    Publication date: June 8, 2023
    Inventors: Bin JIANG, Yashu ZANG, Chung-Ying CHANG, Kang-Wei PENG, Sihe CHEN, Siyi LONG, Mingchun TSENG, Gong CHEN, Weichun TSENG
  • Publication number: 20230178688
    Abstract: A light-emitting device includes an epitaxial light-emitting structure formed on a substrate, a first electrode and a second electrode. The epitaxial light-emitting structure sequentially includes: a first type semiconductor layer including an Al component and electrically connected to the first electrode; an active layer; a second type semiconductor layer electrically connected to the second electrode; a first recess extending from the second type semiconductor layer to the first type semiconductor layer and having a projected area on the substrate ranging from 20% to 70% of that of the epitaxial light-emitting structure; and a second recess extending from the first type semiconductor layer toward the substrate. A light-emitting apparatus is also disclosed.
    Type: Application
    Filed: November 15, 2022
    Publication date: June 8, 2023
    Inventors: WEICHUN TSENG, CHUNG-YING CHANG, YASHU ZANG, BIN JIANG, SIHE CHEN, SIYI LONG
  • Publication number: 20230067481
    Abstract: A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.
    Type: Application
    Filed: May 11, 2022
    Publication date: March 2, 2023
    Inventors: Sihe CHEN, Yu-Chieh HUANG, Yashu ZANG, Tao HAN, Chunhsien LEE, Chimeng LU, Jianbin CHEN